FMMT491A

FMMT491A SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE(sat) 195mΩ at 1A FMMT491A E TYPICAL CHARACTERISTICS 0.5 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A 10A I+/I*=10 I+/I*=50 I+/I*=100 C COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT591A 41A B +25°C 0.5 0.4 0.3 0.2 0.1 I+/I*=10 -55° C +25° C +100° C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ,ICES IEBO VCE(sat) VBE(sat) Base Emitter Turn On Voltage VBE(on) hFE 300 300 200 35 150 10 Static Forward Current Transfer Ratio MIN. 40 40 5 100 100 0.3 0.5 1.1 1.0 900 SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg MAX. VALUE 40 40 5 1 2 500 -55 to +150 UNIT V V V nA nA V V V V UNIT V V V A A mW °C 0 1mA 10mA 100mA 1A 10A IC-Collector Current V CE(sat) vI IC-Collector Current C V CE(sat) vI C 1000 800 600 400 V+-=5V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 10mA 100mA 1A 10A 0 I+/I*=10 -55° C +25°C +100°C +100°C +25°C -55° C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=30V,VCES=30V VEB=4V IC=500mA, IB=50mA* IC=1A, IB=100mA* IC=1A, IB=100mA* IC=1A, VCE=5V* IC=1mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* MHz pF IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz 200 0 1mA 1mA 10mA 100mA 1A 10A IC-Collector Current h vI FE IC-Collector Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Cut-Off Currents Emitter Cut-Off Current Saturation Voltages C V BE(sat) vI C 1.0 0.8 0.6 0.4 0.2 V+-=5V 10 1 -55°C +25°C +100°C 0.1 0.01 0.001 0.1V DC 1s 100ms 10ms 1ms 100us 0 1mA 10mA 100mA 1A 10A 1V 10V 100V IC-Collector Current V BE(on) vI VCE - Collector Emitter Voltage (V) C Safe Operating Area Transition Frequency Collector-Base Breakdown Voltage fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 118 3 - 117 FMMT491A SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE(sat) 195mΩ at 1A FMMT491A E TYPICAL CHARACTERISTICS 0.5 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A 10A I+/I*=10 I+/I*=50 I+/I*=100 C COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT591A 41A B +25°C 0.5 0.4 0.3 0.2 0.1 I+/I*=10 -55° C +25° C +100° C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ,ICES IEBO VCE(sat) VBE(sat) Base Emitter Turn On Voltage VBE(on) hFE 300 300 200 35 150 10 Static Forward Current Transfer Ratio MIN. 40 40 5 100 100 0.3 0.5 1.1 1.0 900 SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg MAX. VALUE 40 40 5 1 2 500 -55 to +150 UNIT V V V nA nA V V V V UNIT V V V A A mW °C 0 1mA 10mA 100mA 1A 10A IC-Collector Current V CE(sat) vI IC-Collector Current C V CE(sat) vI C 1000 800 600 400 V+-=5V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 10mA 100mA 1A 10A 0 I+/I*=10 -55° C +25°C +100°C +100°C +25°C -55° C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=30V,VCES=30V VEB=4V IC=500mA, IB=50mA* IC=1A, IB=100mA* IC=1A, IB=100mA* IC=1A, VCE=5V* IC=1mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* MHz pF IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz 200 0 1mA 1mA 10mA 100mA 1A 10A IC-Collector Current h vI FE IC-Collector Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Cut-Off Currents Emitter Cut-Off Current Saturation Voltages C V BE(sat) vI C 1.0 0.8 0.6 0.4 0.2 V+-=5V 10 1 -55°C +25°C +100°C 0.1 0.01 0.001 0.1V DC 1s 100ms 10ms 1ms 100us 0 1mA 10mA 100mA 1A 10A 1V 10V 100V IC-Collector Current V BE(on) vI VCE - Collector Emitter Voltage (V) C Safe Operating Area Transition Frequency Collector-Base Breakdown Voltage fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 118 3 - 117