FMMT722

SuperSOT SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 – 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 – 0.043 0.0145 0.021 0.0033 0.0059 NOM 0.075 0.0004 0.004 0.0825 0.0985 NOM 0.37 ISSUE 3 JUNE 1996 FEATURES FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 * * * * * * 625mW POWER DISSIPATION C B E IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat) DEVICE TYPE FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 COMPLEMENT FMMT617 FMMT618 FMMT619 – FMMT624 PARTMARKING 717 718 720 722 723 RCE(sat) 72mΩ at 2.5A 97mΩ at 1.5A 163mΩ at 1.5A - ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C* Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide ©Zetex plc 1997 Internet: http://www.zetex.com SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg FMMT 717 -12 -12 -5 -10 -2.5 FMMT 718 -20 -20 -5 -6 -1.5 FMMT 720 -40 -40 -5 -4 -1.5 -500 625 -55 to +150 FMMT 722 -70 -70 -5 -3 -1.5 FMMT 723 -100 -100 -5 -2.5 -1 UNIT V V V A A mA mW °C Operating and Storage Temperature Range *Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 3 - 159 FMMT717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -100 -100 -100 -10 -100 -110 -180 -0.9 -0.8 300 300 180 60 45 80 475 450 275 100 70 110 21 70 130 30 MHz pF ns ns -17 -140 -170 -220 -1.0 -1.0 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VEB=-4V VC ES=-10V IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-6V, IC=-2A IB1=IB2=50mA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A 0.01 0.1 1.0 -55°C 25°C 100°C V+-=2V FMMT717 TYPICAL CHARACTERISTICS 1 +25°C 0.8 0.7 0.6 0.5 0.4 I+/I*=10 100m 10m I+/I*=100 I+/I*=50 I+/I*=30 I+/I*=10 0.3 0.2 0.1 10 0.0 1mA 10mA 100°C 25°C -55°C 1m 1m 10m 100m 1 100mA 1A 10A 100A Emitter Cut-Off Current IEBO ICES VCE(sat) Collector Current (A) Collector Current VCE(SAT) vs IC 1.6 1.4 450 25°C VCE(SAT) vs IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 100°C V+-=2V I+/I*=10 VBE(sat) VBE(on) 1.2 1.0 0.8 -55°C 25°C 100°C -55°C 225 0.6 0.4 0.2 Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) 0.0 1mA 10mA 100mA 1A 10A 0 100A 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current Collector Current hFE vs IC 10 VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 1.0 0.1 D.C. 1s 100ms 10ms 1ms 100µs 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 160 3 - 161 FMMT717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -100 -100 -100 -10 -100 -110 -180 -0.9 -0.8 300 300 180 60 45 80 475 450 275 100 70 110 21 70 130 30 MHz pF ns ns -17 -140 -170 -220 -1.0 -1.0 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VEB=-4V VC ES=-10V IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, IB=-50mA* IC=-2.5A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-6V, IC=-2A IB1=IB2=50mA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 100A 0.01 0.1 1.0 -55°C 25°C 100°C V+-=2V FMMT717 TYPICAL CHARACTERISTICS 1 +25°C 0.8 0.7 0.6 0.5 0.4 I+/I*=10 100m 10m I+/I*=100 I+/I*=50 I+/I*=30 I+/I*=10 0.3 0.2 0.1 10 0.0 1mA 10mA 100°C 25°C -55°C 1m 1m 10m 100m 1 100mA 1A 10A 100A Emitter Cut-Off Current IEBO ICES VCE(sat) Collector Current (A) Collector Current VCE(SAT) vs IC 1.6 1.4 450 25°C VCE(SAT) vs IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 100°C V+-=2V I+/I*=10 VBE(sat) VBE(on) 1.2 1.0 0.8 -55°C 25°C 100°C -55°C 225 0.6 0.4 0.2 Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) 0.0 1mA 10mA 100mA 1A 10A 0 100A 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current Collector Current hFE vs IC 10 VBE(SAT) vs IC SINGLE PULSE TEST Tamb = 25 deg C *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 1.0 0.1 D.C. 1s 100ms 10ms 1ms 100µs 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 160 3 - 161 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158