FZT493

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 – NOVEMBER 1995 7 C COMPLEMENTARY TYPE – PARTMARKING DETAIL – FZT593 FZT493 FZT493 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents ICBO IEBO ICES Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current VCE(sat) VBE(sat) VBE(on) hFE 100 100 80 30 150 10 MIN. 120 100 5 100 100 100 0.3 0.6 1.15 1.0 300 MHz pF SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg TYP. MAX. VALUE 120 100 5 2 1 200 2 -55 to +150 UNIT V V V nA nA nA V V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VEB=4V VCES=100V IC=500mA, IB =50mA* IC=1A, IB =100mA* IC=1A, IB=100mA* IC =1A, VCE =10V* IC=1mA, VCE =10V IC =250mA, VCE =10V* IC =500mA, VCE =10V* IC = 1A, VCE =10V* IC=50mA, VCE=10V, f =100MHz VCB=10V, f=1MHz UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical Characteristics graphs see FMMT493 datasheet 3 - 190