FZT600

FZT600 TYPICAL CHARACTERISTICS 20k 1.00 Group B V SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 3 – FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A +-=10V FZT600 C PART MARKING DETAIL – FZT600 B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. VALUE 160 140 10 4 2 2 -55 to +150 UNIT V V V 0.01 10 10 0.1 1.1 1.2 1.9 1.7 100k 10k 20k 10k 250 10 0.75 2.20 100k MHz 15 MHz µs µs µA µA µA µA E C 16k - (Volts) - Gain 0.90 I /I =100 +* 12k ABSOLUTE MAXIMUM RATINGS. Group A 0.80 8k V 0.70 4k 0.60 0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE MIN. 160 140 10 UNIT V V V A A W °C h ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). MAX. 1.8 1.5 CONDITIONS. IC=100µA IC=10mA* IE=100µA - (Volts) - (Volts) 1.6 1.4 V 1.3 +-=5V 1.4 I /I =100 +* V 1.2 1.2 1.0 0.01 0.1 1 10 1.1 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio GROUP B Transition Frequency Output Capacitance Switching Times 0.75 0.85 1.7 1.5 1k 2k 1k 5k 10k 5k 150 V V V V fT Cobo Ton Toff VCES=140V VEB=8V IC=0.5A, IB=5mA* IC=1A, IB=10mA* IC=1A, IB=10mA* IC=1A, VCE=5V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V* IC=0.5mA, VCE=10V* IC=1A, VCE=10V* IC=100mA, VCE=10V f=20MHz VCB=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA VCB=140V VCB=140V, Tamb=100°C V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 198 3 - 197 FZT600 TYPICAL CHARACTERISTICS 20k 1.00 Group B V SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 3 – FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A +-=10V FZT600 C PART MARKING DETAIL – FZT600 B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. VALUE 160 140 10 4 2 2 -55 to +150 UNIT V V V 0.01 10 10 0.1 1.1 1.2 1.9 1.7 100k 10k 20k 10k 250 10 0.75 2.20 100k MHz 15 MHz µs µs µA µA µA µA E C 16k - (Volts) - Gain 0.90 I /I =100 +* 12k ABSOLUTE MAXIMUM RATINGS. Group A 0.80 8k V 0.70 4k 0.60 0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE MIN. 160 140 10 UNIT V V V A A W °C h ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). MAX. 1.8 1.5 CONDITIONS. IC=100µA IC=10mA* IE=100µA - (Volts) - (Volts) 1.6 1.4 V 1.3 +-=5V 1.4 I /I =100 +* V 1.2 1.2 1.0 0.01 0.1 1 10 1.1 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio GROUP B Transition Frequency Output Capacitance Switching Times 0.75 0.85 1.7 1.5 1k 2k 1k 5k 10k 5k 150 V V V V fT Cobo Ton Toff VCES=140V VEB=8V IC=0.5A, IB=5mA* IC=1A, IB=10mA* IC=1A, IB=10mA* IC=1A, VCE=5V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V* IC=0.5mA, VCE=10V* IC=1A, VCE=10V* IC=100mA, VCE=10V f=20MHz VCB=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA VCB=140V VCB=140V, Tamb=100°C V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 198 3 - 197