MBR1035

MBR1030 - MBR1060 10A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish, RoHS Compliant (Note 3) K C D A B L M TO-220AC Dim A B C D E Pin 1 Pin 2 Min 14.48 10.00 2.54 5.90 2.80 12.70 0.69 3.54 4.07 1.15 0.30 2.04 4.83 Max 15.75 10.40 3.43 6.40 3.93 14.27 0.93 3.78 4.82 1.39 0.50 2.79 5.33 Mechanical Data Case: TO-220AC Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: Type Number Weight: 2.24 grams (approx.) E G J R P Pin 1 Pin 2 Case G J K L M N P R N All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TC = 125°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range Notes: @ TA = 25°C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM CT RqJc dV/dt Tj, TSTG MBR 1030 30 21 MBR 1035 35 24.5 MBR 1040 40 28 10 150 0.84 0.57 0.1 15 400 2.5 1000 MBR 1045 45 31.5 MBR 1050 50 35 MBR 1060 60 42 Unit V V A A @ IF = 10A, TC = 25°C @ IF = 10A, TC = 125°C @TC = 25°C @TC = 125°C 0.95 0.70 0.1 25 V mA pF °C/W V/ms °C -65 to +150 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23009 Rev. 9 - 2 1 of 3 www.diodes.com MBR1030-MBR1060 ã Diodes Incorporated 10 50 IF, INSTANTANEOUS FWD CURRENT (A) MBR1030 - MBR1045 I(AV), AVERAGE FWD CURRENT (A) 8 10 MBR1050 / MBR1060 6 4 1.0 2 0 0 50 100 150 TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 0.1 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 300 1000 Tj = 25° C f = 1.0MHz 250 CT, CAPACITANCE (pF) 100 0.1 200 150 100 50 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 10 100 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance 1.0 Tj = 125° C 0.1 Tj = 75° C 0.01 Tj = 25° C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23009 Rev. 9 - 2 2 of 3 www.diodes.com MBR1030-MBR1060 Ordering Information Device MBR10xx* (Note 4) Packaging TO-220AC Shipping 50/Tube * xx = Device type, e.g. MBR1045 Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS23009 Rev. 9 - 2 3 of 3 www.diodes.com MBR1030-MBR1060