MBR1070CT

SPICE MODEL: MBR10100CT MBR1070CT - MBR10100CT 10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Lead Free Finish, RoHS Compliant (Note 3) 1 2 3 TO-220AB L B C D K A M Dim A B C D E G H G Min 14.48 10.00 2.54 5.90 2.80 12.70 2.40 0.69 3.54 4.07 1.15 0.30 2.04 Max 15.75 10.40 3.43 6.40 3.93 14.27 2.70 0.93 3.78 4.82 1.39 0.50 2.79 Mechanical Data · · · · · · · · Case: TO-220AB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Polarity: As Marked on Body Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 Mounting Position: Any Marking: Type Number Weight: 2.24 grams (approx) J E N J K L M N P HH Pin 1 Pin 2 Pin 3 P Case All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop @ IF = 5.0A, TC = 125°C @ IF = 5.0A, TC = 25°C @ IF = 10A, TC = 125°C @ IF = 10A, TC = 25°C @ TC = 25°C @ TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM @ TA = 25°C unless otherwise specified MBR 1070CT 70 49 MBR 1080CT 80 56 10 120 0.75 0.85 0.85 0.95 0.1 50 300 3.0 10,000 MBR 1090CT 90 63 MBR 10100CT 100 70 Unit V V A A VFM V Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) IRM Cj RqJC dV/dt Tj, TSTG mA pF K/W V/ms °C Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change Operating and Storage Temperature Range Notes: -65 to +150 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30028 Rev. 2 - 2 1 of 2 www.diodes.com MBR1070CT-MBR10100CT ã Diodes Incorporated 8 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 100 I(AV), AVERAGE FWD CURRENT (A) 10 6 4 1.0 2 0 0 50 100 150 TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 0.1 0 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 300 4000 Tj = 25° C f = 1.0MHz 250 Cj, CAPACITANCE (pF) 200 1000 150 100 50 100 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance Ordering Information Device MBR10xxCT* (Note 4) Packaging TO-220AB Shipping 50/Tube * xx = Device type, e.g. MBR1080CT Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS30028 Rev. 2 - 2 2 of 2 www.diodes.com MBR1070CT-MBR10100CT