MMBT3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features
• • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• • • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound, (Note 3). UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate)
C
B
Top View
E
Device Schematic
Maximum Ratings
@TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1)
Thermal Characteristics
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Notes:
Symbol PD RθJA TJ, TSTG
Value 300 417 -55 to +150
Unit mW °C/W °C
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBT3904
Document number: DS30036 Rev. 18 - 2
1 of 4 www.diodes.com
December 2008
© Diodes Incorporated
MMBT3904 Electrical Characteristics
@TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 ⎯ ⎯ 40 70 100 60 30 ⎯ 0.65 ⎯ ⎯ ⎯ 1.0 0.5 100 1.0 300 ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 50 50 ⎯ ⎯ 300 ⎯ ⎯ 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 ⎯ 5.0 35 35 200 50 Unit V V V nA nA Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
⎯
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes: 4. Short duration pulse test used to minimize self-heating effect.
VCE(SAT) VBE(SAT) Cobo Cibo hie hre hfe hoe fT NF td tr ts tf
V V pF pF kΩ -4 x 10 ⎯ μS MHz dB ns ns ns ns
400 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0
RθJA = 417°C/W
1
IC, COLLECTOR CURRENT (A)
0.1
DC Pw = 100ms
Pw = 10ms
0.01
25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 0
0.001
T A = 25°C Single Non-repetitive Pulse DUT mounted onto 1xMRP FR-4 board
0.1
1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
MMBT3904
Document number: DS30036 Rev. 18 - 2
2 of 4 www.diodes.com
December 2008
© Diodes Incorporated
MMBT3904
1,000
1
100
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
0.1
10
1 0.1
1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current
0.01 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
10
15
CAPACITANCE (pF)
10
1
5
0.1 0.1 10 100 1,000 1 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current
0 0.1
1 10 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics
100
Ordering Information
Part Number MMBT3904-7-F
Notes:
(Note 5) Case SOT-23 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1N
Date Code Key Year 1998 Code J Month Code Jan 1 K1N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2006 T Jun 6 2007 U Jul 7 2008 V 2009 W Aug 8 2010 X Sep 9 2011 2012 Y Z Oct O 2013 A Nov N 2014 B 2015 C Dec D
1999 K
2000 L Feb 2
2001 M Mar 3
2002 N
2003 P Apr 4
2004 2005 R S May 5
MMBT3904
Document number: DS30036 Rev. 18 - 2
3 of 4 www.diodes.com
YM
December 2008
© Diodes Incorporated
MMBT3904 Package Outline Dimensions
A
BC
H K D J F G L M
K1
SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm
Suggested Pad Layout
Y Z
C
Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
MMBT3904
Document number: DS30036 Rev. 18 - 2
4 of 4 www.diodes.com
December 2008
© Diodes Incorporated