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MMBTA42_2

MMBTA42_2

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBTA42_2 - NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBTA42_2 数据手册
MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBTA92) Ideal for Low Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 4 and 5) Qualified to AEC-Q101 Standards for High Reliability A C SOT-23 Dim B C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° A B E TOP VIEW E D G H K J L B C D M Mechanical Data • • • • • • • • Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K3M Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) @TA = 25°C unless otherwise specified E G H J K L M α • All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Characteristic Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 300 300 6.0 500 300 417 -55 to +150 Unit V V V mA mW °C/W °C Collector Current (Note 1) (Note 3) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 300 300 6.0 ⎯ ⎯ 25 40 40 ⎯ ⎯ ⎯ 50 Max ⎯ ⎯ ⎯ 100 100 Unit V V V nA nA Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0 VCB = 200V, IE = 0 VCE = 6.0V, IC = 0 IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V IC = 20mA, IB = 2.0mA IC = 20mA, IB = 2.0mA VCB = 20V, f = 1.0MHz, IE = 0 VCE = 20V, IC = 10mA, f = 100MHz hFE VCE(SAT) VBE(SAT) Ccb fT ⎯ 0.5 0.9 3.0 ⎯ ⎯ V V pF MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power dissipation rating (Pd) and power derating curve (figure 1). 4. No purposefully added lead. Halogen and Antimony Free. 5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30062 Rev. 11 - 2 1 of 3 www.diodes.com MMBTA42 © Diodes Incorporated 400 Note 1 350 PD, POWER DISSIPATION (mW) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 10 100 TA = -50°C TA = 25°C IC IB = 10 TA = 150°C 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 10,000 VCE = 5V 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs Collector Current VCE = 5V hFE, DC CURRENT GAIN 1,000 TA = 150°C TA = -50°C 100 TA = -50°C 10 TA = 25°C TA = 25°C TA = 150°C 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 100 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 10 1 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current 10 DS30062 Rev. 11 - 2 2 of 3 www.diodes.com MMBTA42 © Diodes Incorporated Ordering Information (Note 6) Device MMBTA 42-7-F Notes: 6. Packaging SOT-23 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3M Date Code Key Year 1998 Code J Month Code YM K3M = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1999 K 2000 L Jan 1 2001 M Feb 2 2002 N Mar 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30062 Rev. 11 - 2 3 of 3 www.diodes.com MMBTA42 © Diodes Incorporated
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