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SBL3030PT

SBL3030PT

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    SBL3030PT - 30A SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
SBL3030PT 数据手册
SBL3030PT - SBL3060PT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Plastic Material : UL Flammability Classification Rating 94V-0 TO-3P Dim A Min 3.20 4.59 20.80 19.70 2.10 0.51 15.90 1.70 3.10Æ 3.50 5.20 1.12 1.93 2.97 11.70 Max 3.50 5.16 21.30 20.20 2.40 0.76 16.40 2.70 3.30Æ 4.51 5.70 1.22 2.18 3.22 12.80 H S R P* *2 Places N Q L G A B B C D E G H J K J K C Mechanical Data · · · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Marking: Type Number Weight: 2.24 grams (approx.) Mounting Position: Any D L M N E M M P Q R S 4.30 Typical All Dimensions in mm @ TA = 25°C unless otherwise specified Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 95°C (Note 1) Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJc Tj, TSTG SBL 3030PT 30 21 SBL 3035PT 35 24.5 SBL 3040PT 40 28 30 SBL 3045PT 45 31.5 SBL 3050PT 50 35 SBL 3060PT 60 42 Unit V V A A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance Typical Thermal Resistance Junction to Case Operating and Storage Temperature Range @ IF = 15A, TC = 25°C @ TC = 25°C @ TC = 100°C (Note 2) (Note 1) 275 0.55 1.0 75 1100 2.0 -65 to +150 0.70 V mA pF K/W °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS23018 Rev. E-2 1 of 2 SBL3030PT - SBL3060PT IF, INSTANTANEOUS FORWARD CURRENT (A) 30 100 SBL3030PT - SBL30450PT I(AV), AVERAGE RECTIFIED CURRENT (A) 24 10 SBL3050PT - SBL3060PT 18 12 1.0 6 0 0 100 50 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve 150 0.1 Tj = 25°C Pulse width = 300 µs 2% duty cycle 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics per Element IFSM, PEAK FORWARD SURGE CURRENT (A) 300 250 200 150 4000 Cj, JUNCTION CAPACITANCE (pF) 8.3 ms single half-sine-wave JEDEC method Tj = 25°C f = 1MHz 1000 100 50 0 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 1 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per Element IR, INSTANTANEOUS REVERSE CURRENT (A) 100 TC = 100°C 10 TC = 75°C 1.0 0.1 TC = 25°C 0.01 120 40 80 PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics per Element 0 DS23018 Rev. E-2 2 of 2 SBL3030PT - SBL3060PT
SBL3030PT 价格&库存

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