1N3671

1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 7 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case Metallgehäuse Weight approx. – Gewicht ca. Standard polarity: Cathode to stud / Kathode am Gewinde Index R: Anode to stud / Anode am Gewinde (e. g. 1N1199AR) Standard packaging: bulk Standard Lieferform: lose im Karton 10 12 A 50 ... 1000 V DO-4 5.5 g Ø2 SW11 M5 10 Dimensions - Maße [mm] Maximum ratings Type Typ 1N1199A = PBY271 1N1200A = PBY272 1N1202A = PBY273 1N1204A = PBY274 1N1206A = PBY275 1N3671 = PBY276 1N3673 = PBY277 Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 400 600 800 1000 TC = 85°C f > 15 Hz TA = 25°C TA = 25°C IFAV IFRM IFSM i2t Tj TS 30 Type Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 60 120 240 480 720 1000 1200 12 A 40 A 1) 200/240 A 240 A2s -65...+175°C -65...+175°C Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 Max. case temperature TC = 85°C – Max. Gehäusetemperatur TC = 85°C http://www.diotec.com/ © Diotec Semiconductor AG 1 1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 Characteristics Forward Voltage – Durchlass-Spannung Leakage Current – Sperrstrom Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse Recommended mounting torque Empfohlenes Anzugsdrehmoment 10-20 UNF M5 Tj = 25°C Tj = 25°C IF = 30 A VR = VRRM VF IR RthC Kennwerte < 1.5 V < 100 µA < 2 K/W 18 ± 10% lb.in. 2 ± 10% Nm 120 [%] 100 10 3 [A] 10 2 80 10 Tj = 125°C Tj = 25°C 60 40 1 20 IFAV 0 0 TC 50 100 150 [°C] IF 10-1 220a-(30a-1,5v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 103 [A] 10 2 îF 10 1 10 102 [n] 103 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz © Diotec Semiconductor AG http://www.diotec.com/ 2