MMBT3906

MMBT3906 MMBT3906 PNP Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0. 4 3 1.3±0.1 1 .1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2009-04-02 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1 .9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS 2.5 max Grenzwerte (TA = 25°C) MMBT3906 40 V 40 V 5V 250 mW 1) 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 50 mA, 100 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 1 V V V V V hFE hFE hFE hFE hFE hfe hie hoe hre 40 80 100 60 30 100 2 kΩ 3 µS 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – -4 Max. – – 300 – – 400 12 kΩ 60 µS 10*10-4 h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz Small signal current gain – Kleinsignal-Stromverstärkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio – Spannungsrückwirkung 0.1*10 – 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 MMBT3906 Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 30 V, - VEB = 3 V Emitter-Base cutoff current – Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product – Transitfrequenz - IC = 10 mA, - VCE = 20 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time - VCC = 3 V, - VBE = 0.5 V - IC = 10 mA, - IB1 = 1mA - VCC = 3 V, - IC = 10 mA, - IB1 = IB2 = 1 mA td tr ts tf RthA – – – – – – – – < 200 K/W 1) MMBT3904 MMBT3906 = 2A or 3E 35 ns 35 ns 225 ns 75 ns F – – 4 dB CEBO – – 10 pf CCBO – – 4.5 pF fT 250 MHz – – IEBV – –50 nA - ICEX – – 50 nA - VBEsat - VBEsat 0.65 V – – – 0.85 V 0.95 V - VCEsat - VCEsat – – – – 0.25 V 0.4 V Kennwerte (Tj = 25°C) Typ. Max. Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2