P4SMAJ16A

P4SMAJ5.0 ... P4SMAJ170CA P4SMAJ5.0 ... P4SMAJ170CA Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage Version 2011-06-15 5± 0.2 2.2± 0.2 2.1± 0.1 Peak pulse power dissipation Impuls-Verlustleistung Nominal Stand-off voltage Nominale Sperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rollen 400 W 5.0...170 V ~ SMA ~ DO-214AC 0.07 g 1± 0.3 2.7± 0.2 Type Typ 0.15 1.5 4.5 ± 0.3 Dimensions - Maße [mm] For bidirectional types, suppressor characteristics apply in both directions; add suffix “C” or “CA”. Für bidirektionale Dioden gelten die Begrenzer-Eigenschaften in beiden Richtungen; es ist das Suffix “C” oder “CA” zu ergänzen. TVS diodes having breakdown voltage VBR = 220 ... 550 V: please refer to datasheet P4SMA220 TVS-Dioden mit Abbruchspannung VBR = 220 ... 550 V: siehe Datenblatt P4SMA220 Maximum ratings and Characteristics Peak pulse power dissipation (10/1000 µs waveform) Impuls-Verlustleistung (Strom-Impuls 10/1000 µs) Steady state power dissipation Verlustleistung im Dauerbetrieb Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Max. instantaneous forward voltage Augenblickswert der Durchlass-Spannung Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to terminal Wärmewiderstand Sperrschicht – Anschluss TA = 25°C TT = 75°C TA = 25°C IF = 25 A Grenz- und Kennwerte PPPM PM(AV) IFSM VF Tj TS RthA RthT 400 W 1) 1W 40 A 2) < 3.5 V 2) -50...+150°C -50...+150°C < 70 K/W 3) < 30 K/W 1 2 3 Non-repetitive pulse see curve IPP = f (t) / PPP = f (t) Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t) Unidirectional diodes only – Nur für unidirektionale Dioden Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 1 P4SMAJ5.0 ... P4SMAJ170CA Maximum ratings Type Typ bidir. = C / CA P4SMAJ5.0 P4SMAJ5.0A P4SMAJ6.5 P4SMAJ6.5A P4SMAJ7.0 P4SMAJ7.0A P4SMAJ7.5 P4SMAJ7.5A P4SMAJ8.0 P4SMAJ8.0A P4SMAJ8.5 P4SMAJ8.5A P4SMAJ9.0 P4SMAJ9.0A P4SMAJ10 P4SMAJ10A P4SMAJ11 P4SMAJ11A P4SMAJ12 P4SMAJ12A P4SMAJ13 P4SMAJ13A P4SMAJ14 P4SMAJ14A P4SMAJ15 P4SMAJ15A P4SMAJ16 P4SMAJ16A P4SMAJ17 P4SMAJ17A P4SMAJ18 P4SMAJ18A P4SMAJ20 P4SMAJ20A P4SMAJ22 P4SMAJ22A P4SMAJ24 P4SMAJ24A P4SMAJ26 P4SMAJ26A P4SMAJ28 P4SMAJ28A P4SMAJ30 P4SMAJ30A P4SMAJ33 P4SMAJ33A Stand-off voltage Sperrspannung VWM [V] 5.0 5.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 Max. rev. current Max. Sperrstrom at / bei VWM ID [µA] 800 800 500 500 200 200 100 100 50 50 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Breakdown voltage at IT = 1 mA Abbruch-Spannung bei IT = 1 mA *) at / bei IT = 10 mA VBR min [V] 6.4 *) 6.4 *) 7.2 *) 7.2 *) 7.8 *) 7.8 *) 8.3 8.3 8.9 8.9 9.4 9.4 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 VBR max [V] 7.8 *) 7.0 *) 8.8 *) 8.0 *) 9.5 *) 8.7 *) 10.1 9.2 10.9 9.9 11.5 10.4 12.2 11.1 13.5 12.3 14.9 13.5 16.2 14.8 17.6 16.0 19.0 17.3 20.4 18.6 21.7 19.8 23.1 21.0 24.4 22.2 27.1 24.6 29.8 27.1 32.6 29.6 35.3 32.1 37.9 34.5 40.1 36.9 44.8 40.7 Grenzwerte Max. clamping voltage Max. Begrenzer-Spannung at / bei IPPM (10/1000 µs) VC [V] 10.3 9.2 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 IPPM [A] 38.8 43.5 32.5 35.7 30.1 33.3 28.0 31.0 26.7 29.4 25.2 27.8 23.7 26.0 21.3 23.5 19.9 22.0 18.2 20.1 16.8 18.6 15.5 17.2 14.9 16.4 13.9 15.4 13.1 14.5 12.4 13.7 11.2 12.3 10.2 11.3 9.3 10.3 8.6 9.5 8.0 8.8 7.5 8.3 6.8 7.5 2 http://www.diotec.com/ © Diotec Semiconductor AG P4SMAJ5.0 ... P4SMAJ170CA Maximum ratings Type Typ bidir. = C / CA P4SMAJ36 P4SMAJ36A P4SMAJ40 P4SMAJ40A P4SMAJ43 P4SMAJ43A P4SMAJ45 P4SMAJ45A P4SMAJ48 P4SMAJ48A P4SMAJ51 P4SMAJ51A P4SMAJ54 P4SMAJ54A P4SMAJ58 P4SMAJ58A P4SMAJ60 P4SMAJ60A P4SMAJ64 P4SMAJ64A P4SMAJ70 P4SMAJ70A P4SMAJ75 P4SMAJ75A P4SMAJ78 P4SMAJ78A P4SMAJ85 P4SMAJ85A P4SMAJ90 P4SMAJ90A P4SMAJ100 P4SMAJ100A P4SMAJ110 P4SMAJ110A P4SMAJ120 P4SMAJ120A P4SMAJ130 P4SMAJ130A P4SMAJ150 P4SMAJ150A P4SMAJ160 P4SMAJ160A P4SMAJ170 P4SMAJ170A Stand-off voltage Sperrspannung VWM [V] 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 Max. rev. current Max. Sperrstrom at / bei VWM ID [µA] 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Breakdown voltage at IT = 1 mA Abbruch-Spannung bei IT = 1 mA *) at / bei IT = 10 mA VBR min [V] 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 VBR max [V] 48.4 44.4 54.2 49.3 58.3 53.1 61.0 55.5 65.0 59.2 69.2 62.9 73.2 66.6 78.6 71.5 81.4 74.0 86.7 78.9 94.9 86.4 102 92.5 106 96.2 115 105 122 111 135 123 149 135 162 148 176 160 204 185 217 198 231 210 Grenzwerte Max. clamping voltage Max. Begrenzer-Spannung at / bei IPPM (10/1000 µs) VC [V] 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 268 243 287 259 304 275 IPPM [A] 6.2 6.9 5.6 6.2 5.2 5.8 5.0 5.5 4.7 5.2 4.4 4.9 4.2 4.6 3.9 4.3 3.7 4.1 3.5 3.9 3.2 3.5 3.0 3.3 2.9 3.2 2.6 2.9 2.5 2.7 2.2 2.5 2.0 2.3 1.9 2.1 1.7 1.9 1.5 1.6 1.4 1.5 1.3 1.5 P4SMA220 ... P4SMA550CA → VWM = 175 ... 495V © Diotec Semiconductor AG http://www.diotec.com/ 3 P4SMAJ5.0 ... P4SMAJ170CA 120 [%] 100 100 [%] 80 80 tr = 10 µs 60 60 PPPM/2 IPPM/2 40 IPP 20 PPP 0 0 TA 50 100 150 [°C] 1 40 IPP 20 PPP 0 0 tP t 1 2 3 [ms] 4 10/1000µs - pulse waveform 10/1000µs - Impulsform Peak pulse power/current vs. ambient temperature ) Impuls-Spitzenleistung/Strom vs. Umgebungstemp.1) 1 102 [kW] 10 1 PPP 0.1 0.1µs tP 1µs 10µs 100µs 1ms 10ms Non repetitive peak pulse power versus pulse width (10/1000 wave form) Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls) 10000 1000 unidir. bidir. C j [pF] 100 10 1 10 VWM [V] 100 1000 Typ. junction capacitance vs. stand-off voltage Typ. Sperrschichtkapazität über Sperrspannung 1 Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 4