NPW-TSD-AE

DOMINANT Semiconductors Innovating Illumination TM DATA SHEET: SPNovaLEDTM InGaN White High Lumens : 350 mA SPNovaLED TM Featuring a staggering brilliance and significant flux output, the SPNovaLED™ showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra low high profile, which is only 1.5 mm are highly suitable for both conventional lighting and specialized application such as automotive signal lights, traffic lights, channel lights, tube lights and garden lights among others. Features: > Super high brightness surface mount LED. > High flux output; typical 60 lumens > 120° viewing angle. > Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm. > Ultra low height profile - 1.5 mm. > Designed for high current drive; typically 350 mA. > Low thermal resistance; Rth (js) = 18 K/W. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to both IR reflow soldering. > Environmental friendly; RoHS compliance. > SPNovaLED are Class 1M LED products. Do not view directly with optical instrument. Applications: > Automotive: exterior applications, eg: Center High Mounted Stop Light (CHMSL), Rear Combination Lights (RCLs), Signal lightting, Fog-lamp, etc. > Communication: indicator and backlight in mobilephone. > Industry: white goods (eg: Oven, microwave, etc.). > Lighting: garden light, architecture lighting, general lighting. etc © 2005 SPNovaLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice. 1 24/07/2007 V3.0 DOMINANT TM Semiconductors Innovating Illumination InGaN White High Lumens : 350 mA Part Ordering Number NPW-TSD-ADE-1 • NPW-TSD-AD • NPW-TSD-AE Chip Technology / Color InGaN Viewing Angle˚ 120 Luminous Intensity @ IF = 350mA (mcd) 14000.0 - 22400.0 14000.0 - 18000.0 18000.0 - 22400.0 NOTE 1. Luminous intensity is measured with an accuracy of ± 11%. 2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. Electrical Characteristics at Ta=25˚C Part Number NPW-TSD Vf @ If = 350mA Typ. (V) Max. (V) 3.6 4.0 Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V. Material Material Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Ag Plating High Temperature Resistant Plastic, PPA Silicone Resin Sn-Sn Plating 2 24/07/2007 V3.0 DOMINANT TM Semiconductors Innovating Illumination InGaN White High Lumens : 350 mA Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current Reverse Voltage ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature 350 1000 Not designed for reverse bias 2000 120 -40 … +100 -40 … +100 Unit mA mA V V ˚C ˚C ˚C Correlated Color Temperature (CCT) Color Bin Y3 Y2 Y1 X3 X2 X1 Minimum CCT (K) 4500 5000 5500 6000 7000 8000 Maximum CCT (K) 5000 5500 6000 7000 8000 10000 Note: CCT values provided for each of the color bins are an approximation based on correlation. Correlation Between Luminous Intensity And Luminous Flux IV Bin AD AE Luminous Intensity (mcd) Min 14000 18000 Luminous Flux (lm) Min 40.0 55.0 Max 18000 22400 Max 55.0 70.0 Note: Data provided above is an approximation base on statistical correlation. 3 24/07/2007 V3.0 DOMINANT TM Semiconductors Innovating Illumination InGaN White High Lumens: 350 mA Color Bin White Bin Structure 0.44 0.42 0.40 0.38 0.36 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.26 0.27 • • • X1 • X2 • X3 • Y1 • Y2 • Y3 • 0.29 • • • • • 0.28 0.30 0.31 0.32 0.33 0.34 0.35 0.36 Chromaticity coordinate groups are measured with an accuracy of ± 0.01. Bin X1 X2 X3 Y1 Y2 Y3 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy 1 0.278 0.243 0.290 0.265 0.303 0.286 0.315 0.308 0.328 0.330 0.340 0.351 2 0.290 0.265 0.303 0.286 0.315 0.308 0.328 0.330 0.340 0.351 0.353 0.373 3 0.290 0.310 0.303 0.331 0.315 0.353 0.328 0.375 0.340 0.396 0.353 0.418 4 0.278 0.288 0.290 0.310 0.303 0.331 0.315 0.353 0.328 0.375 0.340 0.396 4 24/07/2007 V3.0 DOMINANT TM Semiconductors Innovating Illumination InGaN White High Lumens : 350 mA Relative Flux Vs Forward Current Relative Flux; Normalized at 350mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Relative Intensity Vs Forward Current Relative Intensity; Normalized at 350mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Forward Current, mA Forward Current, mA Forward Current Vs Forward Voltage 600 500 Relative Spectral Emission 1 0.9 0.8 Forward Current, mA Relative Intensity 2 2.5 3 3.5 4 4.5 400 300 200 100 0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 400 500 600 700 Forward Voltage, V Wavelength, nm Forward Current Vs Ambient Temperature (Rja=40K/W) 400 350 Maximum Permissible Current, Ta=25 Maximum Permissible Pulse Pulse Current ˚C 1000 900 Forward Current, mA Pulse Current, mA 0 10 20 30 40 50 60 70 80 90 100 300 250 200 150 100 50 0 800 700 600 500 400 300 200 1 10 100 Ambient Temperature 5 Duty (%); Tp