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BYT56D

BYT56D

  • 厂商:

    EIC

  • 封装:

  • 描述:

    BYT56D - FAST RECOVERY RECTIFIERS - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
BYT56D 数据手册
BYT56A - BYT56M PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free FAST RECOVERY RECTIFIERS DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * W eight : 1.16 grams Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current, ( tp = 10 ms, half sinewave) Maximum Forward Voltage at IF = 3 A Maximum Reverse Current ( VR = VRRM) Maximum Reverse Recovery Time (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.) Maximum Junction Ambient Thermal Resistance ( L = 10mm, TL = Constant ) Junction Temperature Range Storage Temperature Range TJ TSTG - 55 to + 175 - 55 to + 175 °C °C SYMBOL VRRM VR IF(AV) BYT 56A 50 50 BYT 56B 100 100 BYT 56D 200 200 BYT 56G 400 400 BYT 56J 600 600 BYT 56K 800 800 BYT 56M 1000 1000 UNIT V V A 1.5 (on PC Board) 3.0 ( L = 10 mm, TL = 25°C) IFSM VF IR IR(H) Trr RthJA 80 1.4 5 (Tj = 25°C) 150 (Tj = 150°C) 100 25 A V µA µA ns K/W Note : (1) Reverse Recovery Test Conditions Page 1 of 2 Rev. 03 : October 5, 2005 RATING AND CHARACTERISTIC CURVES ( BAT56A - BAT56M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 25-35 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 5 50 VR = VRRM half sinewave RthJA = 45K/W L = 10 mm FIG.3 - MAXIMUM THERMAL RESISTANCE vs. LEAD LENGTH AVERAGE FORW ARD OUTPUT CURRENT, AMPERES 4 RthJA - Therm. Resist. Junction/Ambient (K/W ) 40 3 30 2 20 L L 1 10 TL = constant 0 0 25 50 75 100 125 150 175 0 0 5 10 15 20 25 30 35 40 AMBIENT TEMPERATURE, ( °C) L , Lead Length (mm) FIG.4 - TYPICAL FORWARD CHARACTERISTICS 10 FIG.5 - REVERSE CURRENT vs. JUNCTION TEMPERATURE 100 FORW ARD CURRENT, AMPERES 10 TJ = 25 °C IR, REVERSE CURRENT(µA) 10 VR = VRRM 1 1 0.1 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 0.1 25 50 75 100 125 150 175 200 FORWARD VOLTAGE, VOLTS Tj, JUNCTION TEMPERATURE Page 2 of 2 Rev. 03 : October 5, 2005
BYT56D 价格&库存

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