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SMN1D

SMN1D

  • 厂商:

    EIC

  • 封装:

  • 描述:

    SMN1D - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
SMN1D 数据手册
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 SMN1A - SMN1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * Glass passivated junction chip High current capability High reliability Low reverse current Low forward voltage drop Pb Free / RoHS Compliant GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SOD-123FL 2.5(0.098) 2.9(0.114) 1.55(0.061) 1.95(0.077) 0.6(0.024) 1.0(0.039) 0.05(0.002) 0.25(0.010) 0.5(0.020) 1.1(0.043) max0.1(0.004) 3.5(0.138) 3.9(0.154) MECHANICAL DATA : * Case: JEDEC SOD-123FL, molded plastic over passivated chip * Terminals: Solder Plated, solderable per MIL-STD-750, Method 2026 * Polarity: Color band denotes cathode end * Mounting position : Any * Weight: 0.02 gram (Approximate) 0.8(0.031) 1.2(0.047) Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RATING Marking Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 Amp. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL SMN1A SMN1B SMN1D SMN1G SMN1J SMN1K SMN1M NA NB ND NG NJ NK NM UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 V V V A IFSM 30 A VF IR IR(H) CJ TJ TSTG 1.0 5.0 50 8.0 - 55 to + 150 - 55 to + 150 V μA μA pF °C °C Typical Junction Capacitance (Note1) Operation Junction Temperature Range Storage Temperature Range Note : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC. Page 1 of 2 Rev. 01 : January 12, 2009 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( SMN1A - SMN1M ) FIG.1 - DERATING CURVE CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 1.0 Ta = 25 °C PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150 175 0.8 24 AVERAGE FORWARD CURRENT, (A) 0.6 18 0.4 12 0.2 6 0 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, (A) REVERSE CURRENT, (μA) Ta = 100 °C 1.0 1 .0 0.1 Pulse Width = 300 μs 2% Duty Cycle TJ = 25 °C 0 .1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, (V) PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : January 12, 2009
SMN1D 价格&库存

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