ELM14412AA-N

30 10V 25 4.5V 20 2.5V 3V 20 Vds=5V 16 Id (A) 12 15 10 5 Vgs=1.5V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 60 50 1.8 0 0 0.5 1 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics Id(A) 8 2V 4 125°C 25°C Normalized On-Resistance Vgs=2.5V 1.6 Vgs=4.5V 1.4 1.2 1 0.8 Vgs=10V Vgs=2.5V Rds(on) (m: ) 40 30 20 Vgs=10V 10 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=4.5V 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 90 80 70 125° Id=5A 1.0E+01 1.0E+00 1.0E-01 125°C Rds(on) (m: ) 60 50 40 30 20 10 0 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 2 25°C Is (A) 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=15V Id=8.5A 1400 1200 Capacitance (pF) 1000 Ciss 800 600 400 200 Coss Crss Vgs (Volts) 3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 100Ps 1ms Tj(max)=150°C Ta=25°C 50 40 Tj(max)=150°C Ta=25°C Power (W) DC Id (Amps) 10.0 10ms 0.1s 1.0 1s 10s 30 20 10 0 0.001 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance