ELM14418AA-N

50 45 40 35 10V 6V 7V 5V 30 25 20 Vds=5V Id (A) 30 25 20 15 10 5 0 0 1 2 Id(A) 15 125°C 10 3.5V Vgs=3V 5 0 25°C 3 4 5 2 2.5 3 3.5 4 4.5 5 5.5 Vds (Volts) Fig 1: On-Region Characteristics 45 1.8 Vgs(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance 40 35 Vgs=4.5V 1.6 1.4 Id=10A Vgs=10V Rds(on) (m: ) 30 25 20 15 10 5 0 5 10 15 Vgs=20V Vgs=10V Vgs=20V 1.2 1 0.8 20 25 30 0 25 50 75 100 125 150 175 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 50 40 30 125°C 20 10 0 0 5 10 15 20 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C Id=10A 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m: ) Is (A) 125°C 1.0E-02 25°C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=15V Id=11.5A 1200 1000 Capacitance (pF) Vgs (Volts) 800 600 400 Coss 200 Crss 0 Ciss 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 50 100Ps 1ms 10ms 0.1s 10Ps 40 Tj(max)=150°C Ta=25°C Power (W) DC Id (Amps) 10.0 30 20 10 0 0.001 1.0 Tj(max)=150°C Ta=25°C 0.1 0.1 1 1s 10s 10 Vds (Volts) 100 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance