ELM14430AA-N

60 10V 50 3.5V 40 4.5V 60 50 40 Vds=5V Id (A) 30 20 10 Id(A) 125°C 30 20 25°C 10 3.0V Vgs=2.5V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 7.0 1.6 0 1 1.5 2 2.5 3 3.5 Vgs(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance 6.5 Vgs=4.5V 6.0 Id=18A 1.4 Vgs=4.5V Rds(on) (m: ) 5.5 5.0 4.5 4.0 3.5 0 20 40 60 80 100 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V Vgs=10V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 16 1.0E+02 1.0E+01 12 Id=18A 1.0E+00 125°C Rds(on) (m: ) Is (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 8 125°C 25°C 4 25°C 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=15V Id=18A 8000 6 4 2 0 0 20 40 60 80 100 120 Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) 6000 Ciss Vgs (Volts) 4000 2000 Crss Coss 0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 10ms 10.0 0.1s 1s 10s DC Tj(max)=150°C Ta=25°C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100Ps 1ms 10Ps 100 80 Tj(max)=150°C Ta=25°C Power (W) Id (Amps) 60 40 20 0 0.001 1.0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance