15 10V 3V 12 4.5V
10
8
Vds=5V
Id (A)
2.5V 6
Id (A)
9
6
4 125°C
3
Vgs=2V
2 25°C 0
0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 150 125 Vgs=2.5V
0
0.5
1
1.5
2
2.5
3
3.5
Vgs (Volts) Figure 2: Transfer Characteristics 1.8
Normalized On-Resistance
1.6 1.4 1.2 1 0.8
Vgs=4.5V Vgs=10V
Rds(on) (m: )
100 75 Vgs=4.5V 50 25 0 0 2 4 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V
Vgs=2.5V
0
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
200
1.0E+01 1.0E+00
150
Id=2A
1.0E-01 125°C
Rds(on) (m: )
100
125°C
Is (A)
1.0E-02 1.0E-03 25°C 1.0E-04
50
25°C 1.0E-05
0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=15V Id=4A 4 Capacitance (pF) Vgs (Volts)
600 500 Ciss 400 300 200 100 0 0 1 2 3 4 5 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics Vds (Volts) Figure 8: Capacitance Characteristics Coss Crss
3
2
1
0
100.0
Rds(on) limited
Tj(max.)=150°C Ta=25°C 10Ps Power (W)
20 Tj(max.)=150°C Ta=25°C 15
Id (Amps)
10.0 1ms
100Ps 0.1s 10ms
10
1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZT ja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
30 25 20 -10V -6V -5V -4.5V
30 Vds=-5V 25 20
-4V
-Id (A)
-Id (A)
-3.5V
15 10 5 Vgs=-3V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics
15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Id=-6A 125°C 25°C
60 55 50 Vgs=-4.5V
Normalized On-Resistance
Rds(on) (m: )
45 40 35 30 25 20 15 10 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 Id=-6A Vgs=-10V
1.4
Vgs=-10V
1.2
Vgs=-4.5V
1
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 125°C
Rds(on) (m: )
-Is (A)
70 125°C 60 50 40 25°C
1.0E-02 1.0E-03 1.0E-04 1.0E-05 25°C
30 1.0E-06 20 3 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics
10 Vds=-15V Id=-6A 8 Capacitance (pF) -Vgs (Volts)
1500 1250 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -Vds (Volts) Figure 8: Capacitance Characteristics Crss
6
4
2
0
100.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 0.1s 10Ps 100Ps 1ms 10ms 1.0 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC
40 Tj(max.)=150°C Ta=25°C 30 Power (W)
-Id (Amps)
10.0
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd 0.1 Ton Single Pulse 0.01 0.00001 T
0.0001
0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
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