ELM16402EA-N

30 10V 25 20 6V 5V 4.5V 20 16 12 8 125°C Vgs=3V 4 25°C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Vds (Volts) Fig 1: On-Region Characteristics Vgs (Volts) Figure 2: Transfer Characteristics Vds=5V 4V Id (A) 15 3.5V 10 5 0 Id(A) 60 1.6 Normalized On-Resistance 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 50 Id=5A Vgs=10V Rds(on) (m: ) 40 30 20 10 0 5 Vgs=4.5V Vgs=4.5V Vgs=10V 10 15 20 0 50 100 150 200 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 60 1.0E+01 Id=5A Is Amps 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25°C 125°C Rds(on) (m: ) 50 40 30 20 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body diode characteristics 10 8 1000 Vds=15V Id=6.9A 900 800 f=1MHz Vgs=0V Capacitance (pF) 700 600 500 400 300 200 100 Crss 0 5 10 15 20 25 30 Coss Ciss Vgs (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 0 Vds (Volts) Figure 8: Capacitance Characteristics 100 Rds(on) limited Tj(max)=150°C Ta=25°C 1ms 10ms 0.1s 100Ps 10Ps 40 Tj(max)=150°C Ta=25°C 30 Id (Amps) 10 Power W 10s DC 20 1 1s 10 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000