PRELIMINARY DATA SHEET
512M bits DDR SDRAM
EDD51321CBH (16M words × 32 bits)
Specifications
• Density: 512M bits • Organization ⎯ × 32 bits: 4M words × 32 bits × 4 banks • Package: 90-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V +0.15V/–0.1V • Clock frequency: 166MHz/133MHz (max.) • 2KB page size ⎯ Row address: A0 to A12 ⎯ Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVCMOS • Burst lengths (BL): 2, 4, 8 • Burst type (BT): ⎯ Sequential (2, 4, 8) ⎯ Interleave (2, 4, 8) • /CAS Latency (CL): 3 • Precharge: auto precharge option for each burst access • Driver strength: full/half/quarter • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms ⎯ Average refresh period: 7.8μs • Operating ambient temperature range ⎯ TA = −20°C to +85°C
Pin Configurations
/xxx indicate active low signal.
1 A
VSS DQ31 VSSQ VDDQ DQ16 VDD DQ17 DQ18 VSSQ DQ19 DQ20 VDDQ DQ21 DQ22 VSSQ DQ23 DQS2 VDDQ NC /WE /CS DM2 VSS
2
3
90-ball FBGA 4 5 6
7
8
9
B
VDDQ DQ29 DQ30
C
VSSQ DQ27 DQ28
D
VDDQ DQ25 DQ26
E
VSSQ DQS3 DQ24
F
VDD DM3 CK A11 A7 DM1 NC /CK A12 A8 A5
G
CKE /CAS /RAS BA0 BA1 A1 A3
H
A9
J
A6 A10 (AP) A0 A2 DM0
K
A4
L
VSSQ DQS1 DQ8 DQ7 DQS0 VDDQ DQ5 DQ3 DQ1 DQ6 VSSQ DQ4 VDDQ DQ2 VSSQ VDD
M
VDDQ DQ9 DQ10
N
VSSQ DQ11 DQ12
P
VDDQ DQ13 DQ14
R
VSS DQ15 VSSQ VDDQ DQ0
(Top view) A0 to A12 BA0, BA1 DQ0 to DQ31 DQS0 to DQS3 /CS /RAS /CAS /WE DM0 to DM3 CKE CK /CK VDD VSS VDDQ VSSQ NC Address inputs Bank select address Data-input/output Input and output data strobe Chip select Row address strobe Column address strobe Write enable Input mask Clock enable Clock input Differential clock input Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection
Features
• DLL is not implemented • Low power consumption • Double-data-rate architecture; two data transfers per one clock cycle • Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver. • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS • Burst termination by burst stop command and Precharge command
Document No. E1094E30 (Ver. 3.0) Date Published November 2007 (K) Japan Printed in Japan URL: http://www.elpida.com ©Elpida Memory, Inc. 2007
EDD51321CBH
Ordering Information
Part number EDD51321CBH-6CTT-E EDD51321CBH-7ETT-E Organization (words × bits) 16M × 32 Internal banks 4 Clock frequency MHz (max.) 166 133 Data rate Mbps (max.) 333 266 /CAS latency 3 Package 90-ball FBGA
Part Number
E D D 51 32 1 C BH - 6C TT - E
Elpida Memory Environment Code E: Lead Free (RoHS Compliant) Spec Detail TT: WTR (−20°C to +85°C) Speed 6C: DDR333 (3-4-4) 7E: DDR266 (3-4-3) Package BH: FBGA Die Rev. Type D: Monolithic Device Product Family D: DDR SDRAM Density / Bank 51: 512Mb / 4-bank Organization 32: x32 Power Supply, Interface 1: 1.8V, LVCMOS
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
CONTENTS Specifications.................................................................................................................................................1 Features.........................................................................................................................................................1 Pin Configurations .........................................................................................................................................1 Ordering Information......................................................................................................................................2 Part Number ..................................................................................................................................................2 Electrical Specifications.................................................................................................................................4 Block Diagram .............................................................................................................................................10 Pin Function.................................................................................................................................................11 Command Operation ...................................................................................................................................13 Simplified State Diagram .............................................................................................................................19 Operation of the DDR SDRAM ....................................................................................................................20 Timing Waveforms.......................................................................................................................................43 Package Drawing ........................................................................................................................................52 Recommended Soldering Conditions..........................................................................................................53
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Electrical Specifications
• All voltages are referenced to VSS (GND). • After power up, wait more than 200 µs and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings
Parameter Voltage on any pin relative to VSS Supply voltage relative to VSS Short circuit output current Power dissipation Operating ambient temperature Storage temperature Symbol VT VDD IOS PD TA Tstg Rating –0.5 to +2.3 –0.5 to +2.3 50 1.0 –20 to +85 –55 to +125 Unit V V mA W °C °C Note
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (TA = −20°C to +85°C)
Parameter Supply voltage Pins Symbol VDD, VDDQ VSS, VSSQ All other input VIH pins CK, /CK VIL VIN (DC) VIX VID (DC) VID (AC) DQ, DM, DQS VIHD (DC) VILD (DC) VIHD (AC) VILD (AC) min 1.7 0 0.8 × VDDQ –0.3 –0.3 0.4 × VDDQ 0.4 × VDDQ 0.6 × VDDQ 0.7× VDDQ –0.3 0.8× VDDQ –0.3 typ. 1.8 0 — — — max 1.95 0 VDDQ + 0.3 0.2 × VDDQ VDDQ + 0.3 Unit V V V V V V V V V V V V 6 5 5 2 3 Notes 1
Input high voltage Input low voltage DC input voltage level AC Input differential cross point voltage DC input differential voltage AC input differential voltage DC input high voltage DC input low voltage AC input high voltage AC input low voltage
0.5 × VDDQ 0.6 × VDDQ — — — — — — VDDQ + 0.6 VDDQ + 0.6 VDDQ + 0.3 0.3 × VDDQ VDDQ + 0.3 0.2 × VDDQ
Notes: 1. 2. 3. 4. 5.
VDDQ must be equal to VDD. VIH (max.) = 2.3V (pulse width ≤ 5ns). VIL (min.) = –0.5V (pulse width ≤ 5ns). All voltage referred to VSS and VSSQ must be same potential. VID (DC) and VID (AC) are the magnitude of the difference between the input level on CK and the input level on /CK. 6. The value of VIX is expected to be 0.5 × VDDQ and must track variations in the DC level of the same.
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
DC Characteristics 1 (TA = –20°C to +85°C, VDD and VDDQ = 1.8V +0.15V/–0.1V, VSS and VSSQ = 0V)
×32 Parameter Operating current Standby current in power-down Standby current in power-down (input signal stable) Symbol IDD1 IDD2P IDD2PS Grade -6C -7E max. 90 80 3.0 2.8 Unit mA mA mA Test condition Burst length = 2 tRC ≥ tRC (min.), IO = 0mA, One bank active CKE ≤ VIL (max.), tCK = tCK (min.) CKE ≤ VIL (max.), tCK = ∞ CKE ≥ VIH (min.), tCK = tCK (min.), /CS ≥ VIH (min.), Input signals are changed one time during 2tCK. CKE ≥ VIH (min.), tCK = ∞, Input signals are stable. CKE ≤ VIL (max.), tCK = tCK (min.) CKE ≤ VIL (max.), tCK = ∞ CKE ≥ VIH (min.), tCK = tCK (min.), /CS ≥ VIH (min.), Input signals are changed one time during 2 tCK. CKE ≥ VIH (min.), tCK = ∞, Input signals are stable. Burst length = 4 tCK ≥ tCK (min.), IOUT = 0mA, All banks active tRFC ≥ tRFC (min.) CKE ≤ 0.2V 2 3 Notes 1
Standby current in non power-down
IDD2N
6.0
mA
Standby current in non power-down (input signal stable)
IDD2NS
4.0 5.0 4.0
mA mA mA
Active standby current in power-down IDD3P Active standby current in power-down IDD3PS (input signal stable) Active standby current in non powerdown Active standby current in non powerdown (input signal stable) Burst operating current Refresh current Self-refresh current
IDD3N
10
mA
IDD3NS -6C -7E
7.0 150 120 90 3.5
mA
IDD4 IDD5 IDD6
mA mA mA
Notes: 1. IDD1 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, IDD1 is measured on condition that addresses are changed only one time during tCK (min.). 2. IDD4 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, IDD4 is measured on condition that addresses are changed only one time during tCK (min.). 3. IDD5 is measured on condition that addresses are changed only one time during tCK (min.).
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
DC Characteristics 2 (TA = −20°C to +85°C, VDD and VDDQ = 1.8V +0.15V/–0.1V, VSS and VSSQ = 0V)
Parameter Input leakage current Output leakage current Output high voltage Output low voltage Symbol ILI ILO VOH VOL min. –2.0 –1.5 0.9 × VDDQ — max. 2.0 1.5 — 0.1 × VDDQ Unit µA µA V V Test condition 0 ≤ VIN ≤ VDDQ 0 ≤ VOUT ≤ VDDQ, DQ = disable IOH = − 0.1mA IOL = 0.1 mA Notes
Pin Capacitance (TA = +25°C, VDD and VDDQ = 1.8V +0.15V/–0.1V)
Parameter Input capacitance Symbol CI1 CI2 Delta input capacitance Cdi1 Cdi2 Data input/output capacitance Delta input/output capacitance CI/O Cdio Pins CK, /CK All other input-only pins CK, /CK All other input-only pins DQ, DM, DQS DQ, DM, DQS min. 2.0 2.0 — — 3.5 — typ. — — — — — — max. 4.5 4.5 0.25 0.5 6.0 0.5 Unit pF pF pF pF pF pF Notes 1 1 1 1 1, 2, 1
Notes: 1. These parameters are measured on conditions: TA = +25°C. 2. DOUT circuits are disabled. AC Characteristics
f = 100MHz, VOUT = VDDQ/2, ΔVOUT = 0.2V,
(TA = −20°C to +85°C, VDD and VDDQ = 1.8V +0.15V/–0.1V, VSS and VSSQ = 0V)
-6C Parameter Clock cycle time CK high-level width CK low-level width CK half period Symbol tCK tCH tCL tHP min. 6.0 0.45 0.45 max. — 0.55 0.55 -7E min. 7.5 0.45 0.45 max. — 0.55 0.55 Unit ns tCK tCK tCK ns tCK ns ns ns ns ns ns ns ns ns tCK tCK ns tCK 3 3 2, 8 5, 8 6, 8 3 4 2, 8 Notes
min. ( tCH, tCL) — 2.0 0.9 2.0 — 1.0 — tHP − tQHS — 0.6 0.6 1.75 0.9 0.4 0 0.25 5.0 1.1 5.0 5.5 — 0.5 — 0.65 — — — 1.1 0.6 — —
min. ( tCH, tCL) — 2.0 0.9 2.0 — 1.0 — tHP − tQHS — 0.8 0.8 1.75 0.9 0.4 0 0.25 6.0 1.1 6.0 6.0 — 0.6 — 0.75 — — — 1.1 0.6 — —
DQ output access time from CK, /CK tAC DQS-in cycle time tDSC DQS output access time from CK, tDQSCK /CK DQ-out high-impedance time from tHZ CK, /CK DQ-out low-impedance time from CK, tLZ /CK DQS to DQ skew DQ/DQS output hold time from DQS Data hold skew factor DQ and DM input setup time DQ and DM input hold time DQ and DM input pulse width Read preamble Read postamble Write preamble setup time Write preamble tDQSQ tQH tQHS tDS tDH tDIPW tRPRE tRPST tWPRES tWPRE
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
-6C Parameter Write postamble Symbol tWPST min. 0.4 0.75 0.2 0.2 0.35 0.35 1.1 1.1 2.7 2 42 66 108 24 24 1 12 15 tWR + tRP 120 2 — max. 0.6 1.25 — — — — — — — — 120000 — — — — — — — — — — 7.8 -7E min. 0.4 0.75 0.2 0.2 0.35 0.35 1.3 1.3 3.0 2 45 75 108 30 22.5 1 15 15 tWR + tRP 120 1 — max. 0.6 1.25 — — — — — — — — 120000 — — — — — — — — — — 7.8 Unit tCK tCK tCK tCK tCK tCK ns ns ns tCK ns ns ns ns ns tCK ns ns ns ns tCK µs 3 3 3 Notes 7
Write command to first DQS latching tDQSS transition DQS falling edge to CK setup time DQS falling edge hold time from CK DQS input high pulse width DQS input low pulse width tDSS tDSH tDQSH tDQSL
Address and control input setup time tIS Address and control input hold time Mode register set command cycle time Active to Active/Auto-refresh command period Auto-refresh to Active/Auto-refresh command period Active to Read/Write delay Column address to column address delay Active to active command period Write recovery time Autoprecharge write recovery and precharge time Self-Refresh Exit Period Internal Write to Read command delay Average periodic refresh interval tIH
Address and control input pulse width tIPW tMRD
Active to Precharge command period tRAS tRC tRFC tRCD
Precharge to active command period tRP tCCD tRRD tWR tDAL tSREX tWTR tREF
Notes: 1. On all AC measurements, we assume the test conditions shown in “Test conditions” and full driver strength is assumed for the output load, that is both A6 and A5 of EMRS is set to be “L”. 2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal transition is defined to occur when the signal level crossing VDDQ/2. 3. The timing reference level is VDDQ/2. 4. Output valid window is defined to be the period between two successive transition of data out signals. The signal transition is defined to occur when the signal level crossing VDDQ/2. 5. tHZ is defined as DOUT transition delay from low-Z to high-Z at the end of read burst operation. The timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage level, but specify when the device output stops driving. 6. tLZ is defined as DOUT transition delay from high-Z to low-Z at the beginning of read operation. This parameter is not referred to a specific DOUT voltage level, but specify when the device output begins driving. 7. The transition from low-Z to high-Z is defined to occur when the device output stops driving. A specific reference voltage to judge this transition is not given. 8. tAC, tDQSCK, tHZ and tLZ are specified with 15pF bus loading condition.
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Test Conditions
Parameter Input high voltage Input low voltage Input differential voltage, CK and /CK inputs Input differential cross point voltage, CK and /CK inputs Input signal slew rate Output load Symbol VIH (AC) VIL (AC) VID (AC) VIX (AC) SLEW CL Value 1.6 0.2 1.4 VDDQ/2 with VDD=VDDQ 1 15 Unit V V V V V/ns pF Note
tCK tCH tCL VID
/CK CK
VIH (=1.6V) VIX VIL (=0.2V)
tLZ
tAC
T slew rate =
(VIH − VIL) T
DQOUT (DQOUT)
Q1
Q2
VDDQ/2
Test Condition (Wave form and Timing Reference)
DQ CL
Output Load
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Timing Parameter Measured in Clock Cycle
Number of clock cycle tCK Parameter Write to pre-charge command delay (same bank) Read to pre-charge command delay (same bank) Write to read command delay (to input all data) Burst stop command to write command delay (CL = 3) Burst stop command to DQ high-Z (CL = 3) Read command to write command delay (to output all data) (CL = 3) Pre-charge command to high-Z (CL = 3) Write command to data in latency Write recovery DM to data in latency Mode register set command cycle time Self-refresh exit to non-column command Auto-refresh period Power-down entry Power-down exit to command input CKE minimum pulse width Symbol tWPD tRPD tWRD tBSTW tBSTZ tRWD tHZP tWCD tWR tDMD tMRD tSREX tRFC tPDEN tPDEX tCKE 6.0ns min. 4 + BL/2 BL/2 3 + BL/2 3 3 3 + BL/2 3 1 3 0 2 20 18 2 1 2 max. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.5ns min. 3 + BL/2 BL/2 2 + BL/2 3 3 3 + BL/2 3 1 2 0 2 16 15 1 1 2 max. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Block Diagram
CK /CK CKE
Clock generator
Bank 3 Bank 2 Bank 1
Address, BA0, BA1
Mode register
Row address buffer and refresh counter
Row decoder
Memory cell array Bank 0
Sense amp.
Command decoder
/CS /RAS /CAS /WE
Column address buffer and burst counter
Column decoder
Control logic
Data control circuit
Latch circuit
DQS
Input & Output buffer
DM
DQ
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Pin Function
CK, /CK (input pins) The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross point of the CK rising edge and the /CK falling edge. When a read operation, DQSs and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and the VDDQ/2 level. DQSs for write operation are referred to the cross point of the CK and the /CK. The other input signals are referred at CK rising edge. /CS (input pin) When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A12 (input pins) Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the /CK falling edge in a bank active command cycle. Column address is loaded via the A0 to the A8 at the cross point of the CK rising edge and the /CK falling edge in a read or a write command cycle (See “Address Pins Table”). This column address becomes the starting address of a burst operation. [Address Pins Table]
Address (A0 to A12) Part number EDD51321CBH Page size 2KB Organization × 32 bits Row address AX0 to AX12 Column address AY0 to AY8
A10 (AP) (input pin) A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge command is issued, only the bank that is selected by BA1/BA0 is precharged. If A10 = high when read or write command, auto precharge function is enabled. BA0 and BA1 (input pins) BA0 and BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See Bank Select Signal Table) [Bank Select Signal Table]
BA0 Bank 0 Bank 1 Bank 2 Bank 3 L H L H BA1 L L H H
Remark: H: VIH. L: VIL.
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
CKE (input pin) CKE controls power-down mode, self-refresh function with other command inputs. The CKE level must be kept for 2 clocks at least, that is, if CKE changes at the cross point of the CK rising edge and the /CK falling edge with proper setup time tIS, by the next CK rising edge CKE level must be kept with proper hold time tIH. DQ0 to DQ31 (input/output pins) Data are input to and output from these pins. DQS0 to DQS3 (input and output pin): DQS provides the read data strobes (as output) and the write data strobes (as input). Each DQS pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table). DM0 to DM3 (input pin) DM is the reference signals of the data input mask function. DM is sampled at the cross point of DQS and VDDQ/2. When DM = high, the data input at the same timing are masked while the internal burst counter will be counting up. Each DM pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table). [DQS and DM Correspondence Table]
Part number EDD51321CBH Organization × 32 bits DQS DQS0 DQS1 DQS2 DQS3 Data mask DM0 DM1 DM2 DM3 DQs DQ0 to DQ7 DQ8 to DQ15 DQ16 to DQ23 DQ24 to DQ31
VDD, VSS, VDDQ, VSSQ (Power supply) VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output buffers. VDD must be equal to VDDQ.
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Command Operation
Command Truth Table The DDR SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE Command Ignore command No operation Burst stop command Column address and read command Read with auto precharge Column address and write command Write with auto precharge Row address strobe and bank active Precharge select bank Precharge all bank Refresh Symbol DESL NOP BST READ READA WRIT WRITA ACT PRE PALL REF SELF Mode register set MRS EMRS n–1 H H H H H H H H H H H H H H n H H H H H H H H H H H L H H /CS H L L L L L L L L L L L L L /RAS /CAS /WE × H H H H H H L L L L L L L × H H L L L L H H H L L L L × H L H H L L H L L H H L L BA1 × × × V V V V V V × × × L H BA0 × × × V V V V V V × × × L L AP × × × L H L H V L H × × L L Address × × × V V V V V × × × × V V
Remark: H: VIH. L: VIL. ×: Don’t care V: Valid address input Note: The CKE level must be kept for 1 CK cycle at least. Ignore command [DESL] When /CS is high at the cross point of the CK rising edge and the VDDQ/2 level, all input signals are neglected and internal state is held. No operation [NOP] As long as this command is input at the cross point of the CK rising edge and the VDDQ/2 level, address and data input are neglected and internal state is held. Burst stop command [BST] This command stops a current burst operation. Column address strobe and read command [READ] This command starts a read operation. The start address of the burst read is determined by the column address (See “Address Pins Table” in Pin Function) and the bank select address. After the completion of the read operation, all output buffers become high-Z. Read with auto precharge [READA] This command starts a read operation. After completion of the read operation, precharge is automatically executed. Column address strobe and write command [WRIT] This command starts a write operation. The start address of the burst write is determined by the column address (See “Address Pins Table” in Pin Function) and the bank select address. Write with auto precharge [WRITA] This command starts a write operation. After completion of the write operation, precharge is automatically executed.
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Row address strobe and bank activate [ACT] This command activates the bank that is selected by BA0 and BA1 (See Bank Select Signal Table) and determines the row address (Address Pins Table in “Pin Function”). Precharge selected bank [PRE] This command starts precharge operation for the bank selected by BA0 and BA1. (See Bank Select Signal Table) [Bank Select Signal Table]
BA0 Bank 0 Bank 1 Bank 2 Bank 3 L H L H BA1 L L H H
Remark: H: VIH. L: VIL. Precharge all banks [PALL] This command starts a precharge operation for all banks. Refresh [REF/SELF] This command starts a refresh operation. There are two types of refresh operation, one is auto-refresh, and another is self-refresh. For details, refer to the CKE truth table section. Mode register set/Extended mode register set [MRS/EMRS] The DDR SDRAM has the two mode registers, the mode register and the extended mode register, to defines how it works. The both mode registers are set through the address pins in the mode register set cycle. For details, refer to "Mode register and extended mode register set".
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Function Truth Table The following tables show the operations that are performed when each command is issued in each state of the DDR SDRAM.
Current state Precharging*
1
/CS H L L L L L L L
/RAS /CAS /WE × H H H H L L L × H H H H L L L L × H H H L × H H H H L L L × H H H H L L L × H H L L H H L × H H L L H H L L × H H L × × H H L L H H L × H H L L H H L × H L H L H L × × H L H L H L H L × H L × × × H L H L H L × × H L H L H L ×
Address × × × BA, CA, A10 BA, CA, A10 BA, RA BA, A10 × × × × BA, CA, A10 BA, CA, A10 BA, RA BA, A10 × MODE × × × × × × × × BA, CA, A10 BA, CA, A10 BA, RA BA, A10 × × × × BA, CA, A10 BA, CA, A10 BA, RA BA, A10 ×
Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL
Operation NOP NOP ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL* NOP ILLEGAL
11 11 11 11
Idle*
2
H L L L L L L L L
DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS DESL NOP BST
NOP NOP NOP ILLEGAL* ILLEGAL* Activating NOP Refresh/ 12 Self-refresh* Mode register set* NOP NOP ILLEGAL ILLEGAL ILLEGAL
12 11 11
Refresh 3 (auto-refresh)*
H L H L L
Activating*
4
H L L L L L L L
DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL
NOP NOP ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL
11 11 11 11 11
Active*
5
H L L L L L L L
DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL
NOP NOP NOP Starting read operation Starting write operation ILLEGAL*
11
Pre-charge ILLEGAL
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Current state Read*
6
/CS H L L L L L L L
/RAS /CAS /WE × H H H H L L L × H H H H L L L × H H H × H H L L H H L × H H L L H H L × H H L × H L H L H L × × H L H L H L × × H L H
Address × × × BA, CA, A10 BA, CA, A10 BA, RA BA, A10 × × × × BA, CA, A10 BA, CA, A10 BA, RA BA, A10 × × × × BA, CA, A10
Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL
Operation NOP NOP Burst stop Interrupting burst read operation to start new read ILLEGAL* ILLEGAL*
13 11
Interrupting burst read operation to start pre-charge ILLEGAL
Read with auto preH 7 charge* L L L L L L L Write*
8
DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL
NOP NOP ILLEGAL ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL
14 14 11, 14 11, 14
H L L L
DESL NOP BST READ/READA
NOP NOP Burst Stop Interrupting burst write operation to start read operation. Interrupting burst write operation to start new write operation. ILLEGAL*
11
L L L L Write recovering*
9
H L L L × H H H H L L L
L H H L × H H L L H H L
L H L × × H L H L H L ×
BA, CA, A10 BA, RA BA, A10 × × × × BA, CA, A10 BA, CA, A10 BA, RA BA, A10 ×
WRIT/WRITA ACT PRE, PALL
Interrupting write operation to start pre-charge. ILLEGAL NOP NOP ILLEGAL Starting read operation. Starting new write operation. ILLEGAL* ILLEGAL* ILLEGAL
11 11
H L L L L L L L
DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Current state
/CS
/RAS × H H H H L L L
/CAS × H H L L H H L
/WE × H L H L H L ×
Address × × × BA, CA, A10 BA, CA, A10 BA, RA BA, A10 ×
Command DESL NOP BST READ/READA WRIT/WRIT A ACT PRE, PALL
Operation NOP NOP ILLEGAL ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL
14 14 11, 14 11, 14
Write with auto preH 1 charge* L L L L L L L
Remark: Notes: 1. 2. 3. 4. 5. 6.
H: VIH. L: VIL. ×: Don’t care. The DDR SDRAM is in "Precharging" state for tRP after precharge command is issued. The DDR SDRAM reaches "IDLE" state tRP after precharge command is issued. The DDR SDRAM is in "Refresh" state for tRFC after auto-refresh command is issued. The DDR SDRAM is in "Activating" state for tRCD after ACT command is issued. The DDR SDRAM is in "Active" state after "Activating" is completed. The DDR SDRAM is in "READ" state until burst data have been output and DQ output circuits are turned off. 7. The DDR SDRAM is in "READ with auto precharge" from READA command until burst data has been output and DQ output circuits are turned off. 8. The DDR SDRAM is in "WRITE" state from WRIT command to the last burst data are input. 9. The DDR SDRAM is in "Write recovering" for tWR after the last data are input. 10. The DDR SDRAM is in "Write with auto precharge" until tWR after the last data has been input. 11. This command may be issued for other banks, depending on the state of the banks. 12. All banks must be in "IDLE". 13. Before executing a write command to stop the preceding burst read operation, BST command must be issued. 14. The DDR SDRAM supports the concurrent auto precharge feature, a read with auto precharge or a write with auto precharge, can be followed by any command to the other banks, as long as that command does not interrupt the read or write data transfer, and all other related limitations apply (e.g. contention between READ data and WRITE data must be avoided.) The minimum delay from a read or write command with auto precharge, to a command to a different bank, is summarized below.
To command (different bank, noninterrupting command) Read or Read w/AP Write or Write w/AP Precharge or Activate Minimum delay (Concurrent AP supported) BL/2 CL (rounded up)+ (BL/2) 1 1 + (BL/2) + tWTR BL/2 1
From command Read w/AP
Units tCK tCK tCK tCK tCK tCK
Write w/AP
Read or Read w/AP Write or Write w/AP Precharge or Activate
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
CKE Truth Table
CKE Current state Idle Idle Active/Idle Command Auto-refresh command (REF) Self-refresh entry (SELF) Power-down entry (PDEN) n–1 H H H H L L L L n H L L L H H H H /CS L L L H L H L H /RAS L L H × H × H × /CAS L L H × H × H × /WE H H H × H × H × Address × × × × × × × × Notes 2 2
Self-refresh
Self-refresh exit (SELFX)
Power-down
Power-down exit (PDEX)
Notes: 1. H: VIH . L: VIL × : Don’t care. 2. All the banks must be in IDLE before executing this command. 3. The CKE level must be kept for 1 clock cycle at least. Auto-refresh command [REF] This command executes auto-refresh. The bank and the ROW addresses to be refreshed are internally determined by the internal refresh controller. The output buffer becomes high-Z after auto-refresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can be issued tRFC after the last autorefresh command. The average refresh cycle is 7.8μs. To allow for improved efficiency in scheduling, some flexibility in the absolute refresh interval (64ms) is provided. A maximum of eight auto-refresh commands can be posted to the DDR SDRAM or the maximum absolute interval between any auto-refresh command and the next auto-refresh command is 8 × tREF. Self-refresh entry [SELF] This command starts self-refresh. The self-refresh operation continues as long as CKE is held low. During the selfrefresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is terminated by a self-refresh exit command. Power-down mode entry [PDEN] tPDEN after the cycle when [PDEN] is issued, the DDR SDRAM enters into power-down mode. In power-down mode, power consumption is suppressed by deactivating the input initial circuit. Power-down mode continues while CKE is held low. No internal refresh operation occurs during the power-down mode. Self-refresh exit [SELFX] This command is executed to exit from self-refresh mode. tSREX after [SELFX], the device will be into idle state. Power-down exit [PDEX] The DDR SDRAM can exit from power-down mode tPDEX (1 cycle min.) after the cycle when [PDEX] is issued.
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Simplified State Diagram
EXTENDED MODE REGISTER SET
SELF REFRESH
SR ENTRY
RS
EM
SR EXIT
MODE REGISTER SET
MRS IDLE
REFRESH
AUTO REFRESH
CKE CKE_
IDLE POWER DOWN
ACTIVE POWER DOWN
CKE_ CKE BST WRITE
ACTIVE
ROW ACTIVE
BST READ
WRITE WRITE WITH AP READ WITH AP READ
WRITE
READ READ WITH AP
READ
WRITE WITH AP
READ WITH AP
PRECHARGE
WRITEA
PRECHARGE PRECHARGE
READA
POWER APPLIED
POWER ON
PRECHARGE PRECHARGE
Automatic sequence Manual input
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Operation of the DDR SDRAM
Initialization The DDR SDRAM is initialized in the power-on sequence according to the following. (1) To stabilize internal circuits, when power is applied, a 200μs or longer pause must precede any signal toggling. VDD should be turned on simultaneously or before VDDQ. (2) After the pause, all banks must be precharged using the Precharge command (The Precharge all banks command is convenient). (3) Once the precharge is completed and the minimum tRP is satisfied, two or more Auto-refresh must be performed. (4) Both the mode register and the extended mode register must be programmed. After the mode register set cycle or the extended mode register set cycle, tMRD (2 clocks minimum) pause must be satisfied. Remarks: 1 The sequence of Auto-refresh, mode register programming and extended mode register programming above may be transposed. 2 CKE must be held high. Mode Register and Extended Mode Register Set There are two mode registers, the mode register and the extended mode register so as to define the operating mode. Parameters are set to both through the A0 to the A12 and BA0 and BA1 pins by the mode register set command [MRS] or the extended mode register set command [EMRS]. The mode register and the extended mode register are set by inputting signal via the A0 to the A12 and BA0 and BA1 pins during mode register set cycles. BA0 and BA1 determine which one of the mode register or the extended mode register are set. Prior to a read or a write operation, the mode register must be set. Mode register The mode register has four fields; Reserved /CAS latency Wrap type Burst length : A12 through A7 : A6 through A4 : A3 : A2 through A0
Following mode register programming, no command can be issued before at least 2 clocks have elapsed. /CAS Latency /CAS latency must be set to 3. Burst Length Burst Length is the number of words that will be output or input in a read or write cycle. After a read burst is completed, the output bus will become high-Z. The burst length is programmable as 2, 4 and 8. Wrap Type (Burst Sequence) The wrap type specifies the order in which the burst data will be addressed. This order is programmable as either “Sequential” or “Interleave”. “Burst Operation” shows the addressing sequence for each burst length for each wrap type.
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Extended Mode Register The extended mode register is as follows; Reserved Driver Strength : A12 through A7, A4 through A0 : A6 through A5
Following extended mode register programming, no command can be issued before at least 2 clocks have elapsed. Driver Strength By setting specific parameter on A6 and A5, driving capability of data output drivers is selected.
Power-Down Mode and CKE Control DDR SDRAM will be into power-down mode at the second CK rising edge after CKE to be low level with NOP or DESL command at first CK rising edge after CKE signal to be low.
CK /CK CKE
Command
Valid*1
NOP
NOP
Valid*2
NOP
Address
Valid*1
Valid*2
Power-down mode Notes: 1. Valid*1 can be either Activate command or Precharge command, When Valid*1 is Activate command, power-down mode will be active power-down mode, while it will be precharge power down mode, if Valid*1 will be Precharge command. 2. Valid*2 can be any command as long as all of specified AC parameters are satisfied.
Power-Down Entry and Exit However, if the CKE has one clock cycle high and on clock cycle low just as below, even DDR SDRAM will not enter power-down mode, this command flow does not hurt any data and can be done.
CK /CK CKE
Command
PRE
NOP
NOP
ACT
Note: Assume PRE and ACT command is closing and activating same bank.
CKE Control
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Mode Register Definition
BA0 0 BA1 0 A12 0 A11 0 A10 0 A9 0 A8 0 A7 0 A6 A5 A4 A3 WT A2 A1 BL A0 Mode Register Set LTMODE
Latency mode
Bits6-4 000 001 010 011 100 101 110 111
/CAS latency R R R 3 R R R R
Burst length
Bits2-0 000 001 010 011 100 101 110 111 0 1
WT = 0 R 2 4 8 R R R R
WT = 1 R 2 4 8 R R R R
Wrap type
Sequential Interleave
BA0 0
BA1 1
A12 0
A11 0
A10 0
A9 0
A8 0
A7 0
A6 DS
A5
A4 0
A3 0
A2 0
A1 0
A0 0 Extended Mode Register Set
Driver Strength
Bits6-5 00 01 10 11
Strength Normal 1/2 strength 1/4 strength R
Remark R : Reserved
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Burst Operation The burst type (BT) and the first three bits of the column address determine the order of a data out.
Burst length = 2 Starting Ad. Addressing(decimal) A0 0 1 Sequence 0, 1, 1, 0, Interleave 0, 1, 1, 0, Burst length = 4 Starting Ad. Addressing(decimal) A1 0 0 1 1 Burst length = 8 Starting Ad. A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Addressing(decimal) Interleave 0, 1, 2, 3, 4, 5, 6, 7, 1, 0, 3, 2, 5, 4, 7, 6, 2, 3, 0, 1, 6, 7, 4, 5, 3, 2, 1, 0, 7, 6, 5, 4, 4, 5, 6, 7, 0, 1, 2, 3, 5, 4, 7, 6, 1, 0, 3, 2, 6, 7, 4, 5, 2, 3, 0, 1, 7, 6, 5, 4, 3, 2, 1, 0, 0, 1, 2, 3, 4, 5, 6, 7, 1, 2, 3, 4, 5, 6, 7, 0, 2, 3, 4, 5, 6, 7, 0, 1, 3, 4, 5, 6, 7, 0, 1, 2, 4, 5, 6, 7, 0, 1, 2, 3, 5, 6, 7, 0, 1, 2, 3, 4, 6, 7, 0, 1, 2, 3, 4, 5, 7, 0, 1, 2, 3, 4, 5, 6, A0 Sequence A0 0 1 0 1 Sequence 0, 1, 2, 3, 1, 2, 3, 0, 2, 3, 0, 1, 3, 0, 1, 2, Interleave 0, 1, 2, 3, 1, 0, 3, 2, 2, 3, 0, 1, 3, 2, 1, 0,
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Read/Write Operations Bank Active A read or a write operation begins with the bank active command [ACT]. The bank active command determines a bank address and a row address. For the bank and the row, a read or a write command can be issued tRCD after the ACT is issued. Read operation The burst length (BL), the /CAS latency (CL) and the burst type (BT) of the mode register are referred when a read command is issued. The burst length (BL) determines the length of a sequential output data by the read command that can be set to 2, 4 or 8. The starting address of the burst read is defined by the column address, the bank select address (See “Pin Function”) in the cycle when the read command is issued. The data output timing is characterized by CL and tAC. The read burst start (CL-1) × tCK + tAC (ns) after the clock rising edge where the read command is latched. The DDR SDRAM outputs the data strobe through DQS pins simultaneously with data. tRPRE prior to the first rising edge of the data strobe, the DQS pins are driven low from high-Z state. This low period of DQS is referred as read preamble. The burst data are output coincidentally at both the rising and falling edge of the data strobe. The DQ pins become high-Z in the next cycle after the burst read operation completed. tRPST from the last falling edge of the data strobe, the DQS pins become high-Z. This low period of DQS is referred as read postamble.
CK /CK Command NOP ACT tRCD NOP READ NOP
Address
Row
Column tRPRE
BL = 2 DQS DQ
out0 out1 tRPST
BL = 4
out0 out1 out2 out3
BL = 8
out0 out1 out2 out3 out4 out5 out6 out7 CL = 3 BL: Burst length
Read Operation (Burst Length)
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
t0 CK /CK t0.5 t1 t1.5 t2 t2.5 t3 t3.5 t4 t4.5 t5 t5.5
Command
READ
NOP
tRPRE DQS tAC,tDQSCK DQ out0 out1 out2
tRPST VTT
out3
VTT
Read Operation (/CAS Latency) Write operation The burst length (BL) and the burst type (BT) of the mode register are referred when a write command is issued. The burst length (BL) determines the length of a sequential data input by the write command that can be set to 2, 4 or 8. The latency from write command to data input is fixed to 1. The starting address of the burst read is defined by the column address, the bank select address (See “Pin Function”) in the cycle when the write command is issued. DQS should be input as the strobe for the input-data and DM as well during burst operation. tWPRE prior to the first rising edge of DQS, DQS must be set to low. tWPST after the last falling edge of DQS, the DQS pins can be changed to high-Z. The leading low period of DQS is referred as write preamble. The last low period of DQS is referred as write postamble.
CK /CK Command NOP ACT Row tRCD NOP WRIT Column tWPRE tWPRES BL = 2 DQS DQ in0 in1 tWPST NOP
Address
BL = 4
in0
in1
in2
in3
BL = 8
in0
in1
in2
in3
in4
in5
in6
in7 BL: Burst length
Write Operation
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Burst Stop Burst stop command during burst operation The burst stop (BST) command stops the burst read and sets all output buffers to high-Z. tBSTZ (= CL) cycles after a BST command issued, all DQ and DQS pins become high-Z. The BST command is also supported for the burst write operation. No data will be written in subsequent cycles. Note that bank address is not referred when this command is executed.
t0 CK /CK t0.5 t1 t1.5 t2 t2.5 t3 t3.5 t4 t4.5 t5 t5.5
Command
READ
BST tBSTZ
NOP
DQS
DQ
out0
out1
CL: /CAS latency
Burst Stop during a Read Operation
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Auto Precharge Read with auto precharge The precharge is automatically performed after completing a read operation. The precharge starts BL/2 (= tRPD) clocks after READA command input. tRAS lock out mechanism for READA allows a read command with auto precharge to be issued to a bank that has been activated (opened) but has not yet satisfied the tRAS (min) specification. A column command to the other active bank can be issued the next cycle after the last data output. Read with auto precharge command does not limit row commands execution for other bank.
CK /CK
tRAS (min) tRCD (min)
tRP (min)
BL/2 (= tRPD)
Command
ACT
READA
NOP
ACT
DQS tAC,tDQSCK DQ out0 out1 out2 out3
Note: Internal auto-precharge starts at the timing indicated by "
".
Read with auto precharge Write with auto precharge The precharge is automatically performed after completing a burst write operation. The precharge operation is started Write latency (WL) + BL/2 + tWR (= tWPD) clocks after WRITA command issued. A column command to the other banks can be issued the next cycle after the internal precharge command issued. Write with auto precharge command does not limit row commands execution for other bank.
CK /CK tRAS (min) tRCD (min) Command ACT NOP WRITA NOP ACT tRP
WL + BL/2 + tWR (= tWPD) DM DQS
DQ
in1
in2
in3 ".
in4 BL = 4
Note: Internal auto-precharge starts at the timing indicated by "
Burst Write (BL = 4)
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Command Intervals A Read command to the consecutive Read command Interval
Destination row of the consecutive read command Bank address Same Row address State Same Operation 1. ACTIVE 2. Same Different — 3. Different Any ACTIVE IDLE The consecutive read can be performed after an interval of no less than 1 cycle to interrupt the preceding read operation. Precharge the bank to interrupt the preceding read operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive read command can be issued. See ‘A read command to the consecutive precharge interval’ section. The consecutive read can be performed after an interval of no less than 1 cycle to interrupt the preceding read operation. Precharge the bank without interrupting the preceding read operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive read command can be issued.
t0 tn tn+1 tn+2 tn+3 tn+4 tn+5 tn+6 CK /CK Command ACT NOP READ READ NOP Address BA Row Column A Column B DQ out A0 out A1 out B0 out out B1 B2 out B3 Column = A Column = B Read Read Column = A Dout Column = B Dout DQS Bank0 Active CL = 3 BL = 4 Bank0
READ to READ Command Interval (same ROW address in the same bank)*
Note: n ≥ 4
Preliminary Data Sheet E1094E30 (Ver. 3.0)
28
CK
/CK
Command
Address
BA
DQ
DQS
Note: n ≥ 4
;; ;;;
EDD51321CBH
tn+5 tn+6 t0 t1 t2 tn tn+1 tn+2 tn+3 tn+4 ACT NOP ACT NOP READ READ NOP Row0 Row1 Column A Column B out out A0 A1 Bank0 Dout out out out out B0 B1 B2 B3 Bank3 Dout Column = A Column = B Read Read Bank0 Active Bank3 Active Bank0 Read Bank3 Read CL = 3 BL = 4
READ to READ Command Interval (different bank)*
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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A Write command to the consecutive Write command Interval
Destination row of the consecutive write command Bank address 1. Same Row address State Same
2.
Same
3.
Different
CK /CK Command
Address BA
DQ
DQS
Preliminary Data Sheet E1094E30 (Ver. 3.0)
;;;;;
EDD51321CBH
Operation ACTIVE Different — Any ACTIVE IDLE The consecutive write can be performed after an interval of no less than 1 cycle to interrupt the preceding write operation. Precharge the bank to interrupt the preceding write operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive write command can be issued. See ‘A write command to the consecutive precharge interval’ section. The consecutive write can be performed after an interval of no less than 1 cycle to interrupt the preceding write operation. Precharge the bank without interrupting the preceding write operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive write command can be issued.
t0 tn tn+1 tn+2 tn+3 tn+4 tn+5 tn+6 ACT NOP WRIT WRIT NOP Row Column A Column B inA0 inA1 inB0 inB1 inB2 inB3 Column = B Write Column = A Write Bank0 Active BL = 4 Bank0
WRITE to WRITE Command Interval (same ROW address in the same bank)
30
CK /CK Command
Address BA
DQ
DQS
;;;; ;;
EDD51321CBH
tn+4 tn+5 t0 t1 t2 tn tn+1 tn+2 tn+3 ACT NOP ACT NOP WRIT WRIT NOP Row0 Row1 Column A Column B inA0 inA1 inB0 inB1 inB2 inB3 Bank0 Write Bank3 Write Bank0 Active Bank3 Active BL = 4 Bank0, 3
WRITE to WRITE Command Interval (different bank)
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
A Read command to the consecutive Write command interval with the BST command
Destination row of the consecutive write command Bank address 1. Same Row address State Same ACTIVE Operation Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the consecutive write command can be issued. Precharge the bank to interrupt the preceding read operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive write command can be issued. See ‘A read command to the consecutive precharge interval’ section. Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the consecutive write command can be issued. Precharge the bank independently of the preceding read operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive write command can be issued.
2.
Same
Different
—
3.
Different
Any
ACTIVE IDLE
t0 CK /CK
t1
t2
t3
t4
t5
t6
t7
t8
Command
READ
BST
NOP tBSTW (≥ tBSTZ)
WRIT
NOP
DM tBSTZ (= CL)
DQ High-Z DQS
out0 out1
in0
in1
in2
in3
OUTPUT
INPUT
BL = 4 CL = 3
READ to WRITE Command Interval
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
A Write command to the consecutive Read command interval: To complete the burst operation
Destination row of the consecutive read command Bank address 1. Same Row address State Same ACTIVE Operation To complete the burst operation, the consecutive read command should be performed tWRD after the write command. Precharge the bank tWPD after the preceding write command. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive read command can be issued. See ‘A read command to the consecutive precharge interval’ section. To complete a burst operation, the consecutive read command should be performed tWRD after the write command. Precharge the bank independently of the preceding write operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive read command can be issued.
2.
Same
Different
—
3.
Different
Any
ACTIVE IDLE
t0 CK /CK
t1
t2
t3
tn
tn + 1
tn + 2
tn + 3
tn + 4
Command
WRIT
NOP tWRD (min)
READ
NOP
tWTR* DM
DQ
in0
in1
in2
in3
out0
out1
out2
DQS
INPUT Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
OUTPUT BL = 4 CL = 3
WRITE to READ Command Interval
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
A Write command to the consecutive Read command interval: To interrupt the write operation
Destination row of the consecutive read command Bank address 1. 2. 3. Same Same Different Row address State Same Different Any ACTIVE — ACTIVE IDLE Operation DM must be input 1 cycle prior to the read command input to prevent from being written invalid data. In case, the read command is input in the next cycle of the write command, DM is not necessary. —*
1
DM must be input 1 cycle prior to the read command input to prevent from being written invalid data. In case, the read command is input in the next cycle of the write command, DM is not necessary. —*
1
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write operation in this case. WRITE to READ Command Interval (Same bank, same ROW address)
t0 CK /CK t1 t2 t3 t4 t5 t6 t7 t8
Command
WRIT
READ
NOP
DM
DQ
in0
in1
in2
out0 out1 out2 out3
High-Z High-Z
DQS
Data masked
BL = 4 CL = 3
[WRITE to READ delay = 1 clock cycle]
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
t0 CK /CK t1 t2 t3 t4 t5 t6 t7 t8
Command
WRIT
NOP
READ
NOP
DM
DQ
in0
in1
in2
in3
out0 out1 out2 out3
High-Z High-Z
DQS
Data masked
BL = 4 CL = 3
[WRITE to READ delay = 2 clock cycle]
t0 CK /CK
t1
t2
t3
t4
t5
t6
t7
t8
t9
Command
WRIT
NOP tWTR*
READ
NOP
DM
DQ
in0
in1
in2
in3
out0 out1 out2 out3
DQS
Data masked
BL = 4 CL = 3
Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
[WRITE to READ delay = 4 clock cycle]
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
A Write command to the Bust stop command interval: To interrupt the write operation WRITE to BST Command Interval (Same bank, same ROW address)
t0 t1 t2 t3 t4 t5 t6 t7 CK /CK Command WRIT BST NOP DM DQ in0 in1 DQS BL = 4 or longer Data will be written Following data will not be written.
[WRITE to BST delay = 1 clock cycle]
t2 t3 t4
t0
t1
t5
t6
t7
CK
/CK
Command
WRIT
NOP
BST
NOP
DM
DQ
in0
in1
in2
in3
DQS
Data will be written
Following data will not be written.
BL = 8 or longer
[WRITE to BST delay = 2 clock cycle]
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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; ;; ;
EDD51321CBH
t7 t0 t1 t2 t3 t4 t5 t6 CK /CK Command WRIT NOP BST NOP DM DQ in0 in1 in2 in3 in4 in5 DQS BL = 8 or longer Data will be written Following data will not be written.
[WRITE to BST delay = 3 clock cycle]
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
A Read command to the consecutive Precharge command interval Operation by each case of destination bank of the consecutive Precharge command.
Bank address 1. 2. Same Different Operation The PRE and PALL command can interrupt a read operation. To complete a burst read operation, tRPD is required between the read and the precharge command. Please refer to the following timing chart. The PRE command does not interrupt a read command. No interval timing is required between the read and the precharge command.
READ to PRECHARGE Command Interval (same bank) : To output all data To complete a burst read operation and get a burst length of data, the consecutive precharge command must be issued tRPD (= BL/ 2 cycles) after the read command is issued.
t0 CK /CK Command NOP
READ
t1
t2
t3
t4
t5
t6
t7
t8
NOP
PRE/ PALL
NOP
DQ
out0 out1 out2 out3
DQS tRPD = BL/2
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4) READ to PRECHARGE Command Interval (same bank): To stop output data A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become high-Z tHZP (= CL) after the precharge command.
t0 CK /CK Command NOP READ PRE/PALL NOP High-Z DQ out0 out1 High-Z t1 t2 t3 t4 t5 t6 t7 t8
DQS tHZP
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 4, 8)
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
A Write command to the consecutive Precharge command interval (same bank) Operation by each case of destination bank of the consecutive Precharge command.
Bank address 1. 2. Same Different Operation The PRE and PALL command can interrupt a write operation. To complete a burst write operation, tWPD is required between the write and the precharge command. Please refer to the following timing chart. The PRE command does not interrupt a write command. No interval timing is required between the write and the precharge command.
WRITE to PRECHARGE Command Interval (same bank) The minimum interval tWPD is necessary between the write command and the precharge command.
t0 CK /CK Command t1 t2 t3 t4 tn tn + 1 tn + 2
WRIT
NOP tWPD tWR
PRE/PALL
NOP
DM
DQS
DQ
in0
in1
in2
in3
Last data input
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)
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EDD51321CBH
t0 CK /CK Command t1 t2 t3 tn tn + 1 tn + 2 tn + 3
WRIT
NOP tWPD tWR
PRE/PALL
NOP
DM
DQS
DQ
in0
in1 Last data input
in2
in3
Data masked
BL = 4
WRITE to PRECHARGE Command Interval (same bank) (BL = 4, DM to mask data)
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EDD51321CBH
Bank active command interval
Destination row of the consecutive ACT command Bank address 1. 2. Same Different Row address Any Any State ACTIVE ACTIVE IDLE Operation Two successive ACT commands can be issued at tRC interval. In between two successive ACT operations, precharge command should be executed. Precharge the bank. tRP after the precharge command, the consecutive ACT command can be issued. tRRD after an ACT command, the next ACT command can be issued.
CK /CK
Command
ACTV ACT
ACT
NOP
PRE
NOP
ACT
NOP
Address
ROW: 0
ROW: 1
ROW: 0
BA Bank0 Active Bank3 Active tRC Bank0 Precharge Bank0 Active
tRRD
Bank Active to Bank Active Mode register set to Bank-active command interval The interval between setting the mode register and executing a bank-active command must be no less than tMRD.
CK /CK Command MRS NOP ACT NOP
Address
CODE Mode Register Set tMRD
BS and ROW Bank3 Active
Mode Register Set to Bank Active
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EDD51321CBH
DM Control DM can mask input data. By setting DM to low, data can be written. When DM is set to high, the corresponding data is not written, and the previous data is held. The latency between DM input and enabling/disabling mask function is 0.
t1 DQS t2 t3 t4 t5 t6
DQ
Mask
Mask
DM Write mask latency = 0
DM Control
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Timing Waveforms
Command and Addresses Input Timing Definition
CK /CK tIS Command (/RAS, /CAS, /WE, /CS) tIH
tIS
tIH
Address
= Don't care
Read Timing Definition (1)
CK /CK Command READ
tLZ (min.) DQ (Output) High-Z
tHZ (max.) High-Z
tLZ (min.) DQS High-Z High-Z
CL = 3 BL = 2
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EDD51321CBH
Read Timing Definition (2)
/CK CK tDQSCK tAC (min.) DQS tAC (min.) Fastest DQ (Output) tQH tDQSQ Slowest DQ (Output) Data valid window tDQSCK tAC (max.) DQS tDQSQ Fastest DQ (Output) tDSC
tAC (max.) Slowest DQ (Output) Data valid window
tQH
tQHS
BL = 4 = Invalid
Write Timing Definition
tCK /CK CK tDQSS tWPRES DQS tWPRE DQ (Din) tDS DM tDS tDH tDIPW tDIPW BL = 4 = Don't care tDH tDIPW tDQSL tDQSH tWPST tDSC tDSS tDSH tDSS
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EDD51321CBH
Power on Sequence*
CK /CK Clock cycle is necessary CKE VIH tMRD tMRD 2 refresh cycles are necessary
/CS
/RAS
/CAS
/WE
BA0
BA1
A10 Address key Address Address key
DM High-Z DQ tRP tRFC tRFC
Precharge All Banks Command is necessary
Mode Register Set Command is necessary
Extended Mode Register Set Command is necessary
CBR (Auto) Refresh Command is necessary
CBR (Auto) Refresh Command is necessary
Activate Command = Don't care
Note: The sequence of auto-refresh, mode register programming and extended mode register programming above may be transposed.
Preliminary Data Sheet E1094E30 (Ver. 3.0)
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EDD51321CBH
Read Cycle
tCK tCH tCL CK /CK VIH CKE tRCD tIS tIH /CS tIS tIH /RAS tIS tIH /CAS tIS tIH /WE tIS tIH BA tIS tIH A10 tIS tIH Address tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tRAS tIS tIH tRP tIS tIH tRC
DM High-Z tRPRE tDSC tRPST
DQS (output)
DQ (output)
High-Z Bank Bank 0 Active Bank 0 Read Bank 0 Precharge
CL = 3 BL = 4 Bank0 Access = Don't care
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EDD51321CBH
Write Cycle
tCK tCH tCL CK /CK VIH CKE tRCD tIS tIH /CS tIS tIH /RAS tIS tIH /CAS tIS tIH /WE tIS tIH BA tIS tIH A10 tIS tIH Address tDQSS DQS (input) tDQSH tDS DM tDS DQ (input) tDH Bank Bank 0 Active Bank 0 Write tWR Bank 0 Precharge CL = 2 BL = 4 Bank0 Access = Don't care tDH tDS tDH tDQSL tWPST tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tRAS tIS tIH tRP tIS tIH tRC
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EDD51321CBH
Mode Register Set Cycle
T0 /CK CK CKE /CS /RAS /CAS /WE BA Address DM High-Z DQS High-Z DQ tRP Precharge If needed tMRD Mode register set Bank 3 Active Bank 3 Read Bank 3 Precharge CL = 3 BL = 4 = Don't care b valid code code R: b C: b VIH T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
Read/Write Cycle
T0 /CK CK CKE /CS /RAS /CAS /WE BA Address DM DQS DQ a Read tRWD Bank 0 Active Bank 0 Bank 3 Read Active Bank 3 Write b Write tWRD Bank 3 Read Read cycle CL = 3 BL = 4 = Don't care b’’ Read R:a C:a R:b C:b C:b'' T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Tn Tn+1 Tn+2 Tn+3 Tn+4
VIH
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EDD51321CBH
Auto-Refresh Cycle
/CK CK CKE /CS /RAS /CAS /WE BA Address A10=1 R: b C: b VIH
DM DQS DQ tRP Precharge If needed Auto Refresh High-Z High-Z tRFC Bank 0 Active Bank 0 Read CL = 3 BL = 4 = Don't care b
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EDD51321CBH
Self-Refresh Cycle
/CK CK CKE
tIS
tIH CKE = low
/CS /RAS
/CAS
/WE
BA
Address
A10=1
R: b
C: b
DM DQS DQ tRP
tSREX
Precharge If needed
Self refresh entry
Self refresh exit
Bank 0 Active
Bank 0 Read BL = 4 = Don't care
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EDD51321CBH
Power-Down Entry and Exit
/CK CK CKE /CS /RAS /CAS /WE BA Address DM DQS DQ
tRP tPDEN Precharge If needed Power down entry tPDEX Power down exit Bank 0 Active Bank 0 Read
A10=1
tIS
tIH CKE = low tCKE
R: b
R: c
BL = 4 = Don't care
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EDD51321CBH
Package Drawing
90-ball FBGA Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm 8.0 ± 0.1
INDEX MARK
0.2 S A
13.0 ± 0.1
0.2 S B 0.2 S 1.08 max. S 0.1 S A 0.35 ± 0.05 90-φ0.45 ± 0.05 φ0.08 M S A B
INDEX MARK 1.6 0.8 6.4
11.2
B
0.8
ECA-TS2-0213-01
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Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDD51321CBH. Type of Surface Mount Device EDD51321CBH: 90-ball FBGA < Lead free (Sn-Ag-Cu) >
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N OTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function.
CME0107
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The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Be aware that this product is for use in typical electronic equipment for general-purpose applications. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] Usage in environments with special characteristics as listed below was not considered in the design. Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in environments with the special characteristics listed below. Example: 1) Usage in liquids, including water, oils, chemicals and organic solvents. 2) Usage in exposure to direct sunlight or the outdoors, or in dusty places. 3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 , SO 2 , and NO x . 4) Usage in environments with static electricity, or strong electromagnetic waves or radiation. 5) Usage in places where dew forms. 6) Usage in environments with mechanical vibration, impact, or stress. 7) Usage near heating elements, igniters, or flammable items. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations.
M01E0706
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