EM625FS16DT10S

EM620FV8B Series Low Power, 256Kx8 SRAM Document Title 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. 0.0 0.1 0.2 0.3 History Initial Draft 0.1 Revision 0.2 Revision 0.3 Revision Remove BYTE option information Remove UB, LB information Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns), tOE-55(30ns to 25ns), tWP-55(45ns to 40ns), tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns), ICC(2mA to 3mA), ICC1(2mA to 3mA) VIH level change from 2.0V to 2.2V Draft Date June 7, 2007 June 15, 2007 June 21, 2007 July 2, 2007 Remark 0.4 0.4 Revision Aug. 16, 2007 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Emerging Memory & Logic Solutions Inc. Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 EM620FV8B Series Low Power, 256Kx8 SRAM 256K x8 Bit Low Power and Low Voltage CMOS Static RAM FEATURES - Process Technology : 0.15µm Full CMOS - Organization :256K x8 - Power Supply Voltage => EM620FV8B : 2.7~3.6V - Low Data Retention Voltage : 1.5V - Three state output and TTL Compatible - Packaged product designed for 45/55/70ns GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bare silicon - Typical Die Thickness = 725um +/-15um - Typical top-level metallization : => Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms - Topside Passivation : => Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms - Wafer diameter : 8 inch OPTIONS - C1/W1 : DC Probed Die/Wafer @ Hot Temp - C2/W2 : DC/AC Probed Die/Wafer @ Hot Temp 1 56 29 EM620FV8B (Dual C/S) + (0.0) EMLSI LOGO 28 y x Pre-charge Circuit PAD DESCRIPTIONS Name CS1,CS2 OE WE A0~A17 I/O0~I/O7 Function Chip select inputs Output Enable input Write Enable input Address Inputs Data Inputs/Outputs Name Vcc Vss NC Function Power Supply Ground No Connection A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 VCC Row Select VSS Memory Array 1024 x 2048 I/O0 ~ I/O7 Data Cont I/O Circuit Column Select A10 A11 A12 A13 A14 A15 A16 A17 WE OE CS1 CS2 Control Logic BONDING INSTRUCTIONS The 2M full CMOS SRAM die has total 56pads. Refer to the bond pad location and identification table for X, Y coordinates. EMLSI recommends using a bond wire on back side of die onto Vss bond pad for improved noise immunity. 2 EM620FV8B Series Low Power, 256Kx8 SRAM FUNCTIONAL SPECIFICATIONS There are 3 classifications for EMLSI die and wafers products, which are C1 and C2 for die and W1 and W2 for wafer, respectively. Each die and wafer support dedicated characteristics and probe the electrical parameters within their specifications. Followings are brief information for die and wafer classifications. Please refer to packaged specifications for more information but these parameters are not guaranteed at bare die and wafer. − C1 LEVEL DIE OR W1 LEVEL WAFER The DC parameters are measured by specification for C1 level die or W1 level wafer. The DC parameters measured at 70°C temperature, which called ‘Hot DC Sorting’ Other parameters are not guaranteed and warranted including device reliability. Please refer to qualification report for device reliability and package level datasheets for electrical parameters. − C2 LEVEL DIE OR W2 LEVEL WAFER The DC parameters and selected AC parameters are measured with for C2 level die or W2 level wafer. The DC characteristics of C2 die and W2 wafer is tested based on DC specifications of C1 level die and W1 level wafer. The DC and specified AC parameters are tested at 70°C temperature, which called ‘Hot DC & Selective AC Sorting’. Other parameters are not guaranteed and warranted including device reliability. Please refer to qualification report for device reliability and package level datasheets for electrical parameters. C2 level die and W2 level wafer probe following AC parameter. − tRC, tAA, tCO − tWC, tCW PACKAGING Individual device will be packed in anti-static trays. − Chip Trays : A 2-inch square waffle style carrier for die with separate compartments for each die. Commonly referred to as a waffle pack, each tray has a cavity size selected for the device that allows for easy loading and unloading and prevents rotation. The tray itself is made of conductive material to reduce the danger of damage to the die from electrostatic discharge. The chip carriers will be labeled with the following information : − EMLSI wafer lot number − EMLSI part number − Quantity − Jar Packing : Jar packing is made by EMLSI and used by many customers that we deliver the requested die as wafer. The pack is consisted of clean paper to wrap the wafer, high cushioned sponge between wafers and hardly fragile plastic box with sponge. Each pack has typically 24 wafers and then several packs are put into larger box depending on amounts of wafers. Bond Pad #1 at Top Die orientation in chip carriers STORAGE AND HANDLING EMLSI recommends the die stored in a controlled environment with filtered nitrogen. The carrier must be opened at ESD safe environment when inspection and assembly. 3 EM620FV8B Series Low Power, 256Kx8 SRAM ABSOLUTE MAXIMUM RATINGS * Parameter Voltage on Any Pin Relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Operating Temperature Symbol VIN, VOUT VCC PD TA Minimum -0.2 to 4.0V -0.2 to 4.0V 1.0 -40 to 85 Unit V V W o C * Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper- ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. FUNCTIONAL DESCRIPTION CS1 H X X L L L L CS2 X L X H H H H OE X X X H H L X WE X X X H H H L I/O0-7 High-Z High-Z High-Z High-Z High-Z Data Out Data In Mode Deselected Deselected Deselected Output Disabled Output Disabled Read Write Power Stand by Stand by Stand by Active Active Active Active Note: X means don’t care. (Must be low or high state) 4 EM620FV8B Series Low Power, 256Kx8 SRAM RECOMMENDED DC OPERATING CONDITIONS 1) Parameter Supply voltage Ground Input high voltage Input low voltage 1. 2. 3. 4. Symbol VCC VSS VIH VIL Min 2.7 0 2.2 -0.23) Typ 3.3 0 - Max 3.6 0 VCC + 0.22) 0.6 Unit V V V V TA= -40 to 85oC, otherwise specified Overshoot: VCC +2.0 V in case of pulse width < 20ns Undershoot: -2.0 V in case of pulse width < 20ns Overshoot and undershoot are sampled, not 100% tested. CAPACITANCE1) (f =1MHz, TA=25oC) Item Input capacitance Input/Ouput capacitance 1. Capacitance is sampled, not 100% tested. Symbol CIN CIO Test Condition VIN=0V VIO=0V Min - Max 8 10 Unit pF pF DC AND OPERATING CHARACTERISTICS Parameter Input leakage current Output leakage current Operating power supply Symbol ILI ILO ICC ICC1 Average operating current ICC2 VOL VOH ISB VIN=VSS to VCC CS1=VIH or CS2=VIL or OE=VIH or WE=VIL VIO=VSS to VCC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL Cycle time=1µs, 100% duty, IIO=0mA, CS1VCC-0.2V, VINVCC-0.2V Cycle time = Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA CS1=VIH, CS2=VIL, Other inputs=VIH or VIL CS1>VCC-0.2V, CS2>VCC-0.2V (CS controlled) or 0V