EPC2818

eGaN® FET DATASHEET EPC2818 EPC2818 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 150 V RDS(ON) , 25 mW ID , 12 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings VDS ID VGS TJ TSTG Drain-to-Source Voltage 150 Continuous (TA =25˚C, θJA = 17) 12 Pulsed (25˚C, Tpulse = 300 µs) 60 Gate-to-Source Voltage 6 Gate-to-Source Voltage -5 Operating Temperature -40 to 125 Storage Temperature -40 to 150 PARAMETER EPC2818 eGaN® FETs are supplied only in passivated die form with solder bars Applications • High Speed DC-DC conversion • Class D Audio • Hard Switched and High Frequency Circuits V A Benefits • Ultra High Efficiency • Ultra Low RDS(on) • Ultra low QG • Ultra small footprint V ˚C TEST CONDITIONS MIN 150 TYP MAX UNIT Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 200 µA IDSS Drain Source Leakage VDS = 120 V, VGS = 0 V 50 150 Gate-Source Forward Leakage VGS = 5 V 1 3 Gate-Source Reverse Leakage VGS = -5 V 0.2 1 1.4 2.5 V 18 25 mΩ IGSS VGS(TH) Gate Threshold Voltage RDS(ON) Drain-Source On Resistance VDS = VGS, ID = 3 mA 0.7 VGS = 5 V, ID = 6 A V µA mA Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V, T = 25˚C 1.8 IS = 0.5 A, VGS = 0 V, T = 125˚C 1.8 V All measurements were done with substrate shorted to source. PARAMETER Thermal Characteristics TEST CONDITIONS MIN Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CRISSθJC RθJB COSS R CRSSθJA Thermal InputResistance, CapacitanceJunction to Case Thermal Junction to Board VDS = 100 V, VGS = 0 V OutputResistance, Capacitance Thermal Resistance, Junction to Ambient (Note 1) Reverse Transfer Capacitance Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. Total Gate Charge (VGS = 5 V) G SeeQhttp://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. QGD Gate to Drain Charge VDS = 100 V, ID = 12 A EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 | QGS Gate to Source Charge QOSS Output Charge VDS = 100 V, VGS = 0 V TYP TYP MAX 480 2.4 270 16 540 ˚C/W 350 ˚C/W pF ˚C/W 9.2 56 12 5 7.5 1.7 2.6 1.3 2 40 50 UNIT | nC PAGE 1 Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) Source-Drain Forward Voltage eGaN®VSDFET DATASHEET IS = 0.5 A, VGS = 0 V, T = 25˚C 1.8 IS = 0.5 A, VGS = 0 V, T = 125˚C 1.8 V EPC2818 All measurements were done with substrate shorted to source. PARAMETER TEST CONDITIONS MIN TYP MAX 480 540 270 350 UNIT Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance 9.2 12 QG Total Gate Charge (VGS = 5 V) 5 7.5 QGD Gate to Drain Charge 1.7 2.6 QGS Gate to Source Charge 1.3 2 QOSS Output Charge 40 50 QRR Source-Drain Recovery Charge VDS = 100 V, VGS = 0 V VDS = 100 V, ID = 12 A VDS = 100 V, VGS = 0 V pF nC 0 All measurements were done with substrate shorted to source. 60 Figure 1: Typical Output Characteristics VGS = 5 VGS = 4 VGS = 3 VGS = 2 30 20 40 30 20 10 10 0 0.5 1 1.5 2 VDS – Drain to Source Voltage (V) 2.5 0 3 Figure 3: RDS(ON) vs VG for Various Current 1 1.5 2 2.5 3 VGS – Gate to Source Voltage (V) 3.5 4 4.5 RDS(ON) – Drain to Source Resistance (mΩ) 60 50 40 30 20 ID = 10 A ID = 20 A ID = 40 A ID = 60 A 10 0 0.5 Figure 4: RDS(ON) vs VG for Various Temperature 60 RDS(ON) – Drain to Source Resistance (mΩ) 25˚C 125˚C VDS = 3 V 40 0 Figure 2: Transfer Characteristics 50 ID – Drain Current (A) 50 ID – Drain Current (A) 60 2 2.5 3 3.5 4 4.5 VGS – Gate to Source Voltage (V) 5 5.5 25˚C 125˚C 50 40 30 20 10 0 2 2.5 EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 | 3 3.5 4 4.5 5 5.5 VGS – Gate to Source Voltage (V) | PAGE 2 eGaN® FET DATASHEET EPC2818 Figure 5: Capacitance 1 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 0.6 0.4 0.2 0 50 ISD – Source to Drain Current (A) 2 0 150 Figure 7: Reverse Drain-Source Characteristics 25˚C 125˚C 30 20 10 0 0.5 1 1.5 2 2.5 3 VSD – Source to Drain Voltage (V) 3.5 4 1 2 3 4 5 QG – Gate Charge (nC) 6 Figure 8: Normalized On Resistance vs Temperature ID = 12 A VGS = 5 V 2.5 2 1.5 1 0.5 0 -20 4.5 Figure 9: Normalized Threshold Voltage vs Temperature 1.15 0 3 40 1.2 .03 0 20 40 60 80 100 TJ – Junction Temperature ( ˚C ) 120 140 Figure 10: Gate Current 25˚C 125˚C ID = 3 mA .025 1.1 IG – Gate Current (A) Normalized Threshold Voltage (V) 100 VDS – Drain to Source Voltage (V) 50 0 3 1 Normalized On-State Resistance – RDS(ON) 60 ID = 12 A VD = 100 V 4 VG – Gate Voltage (V) C – Capacitance (nF) 0.8 0 Figure 6: Gate Charge 5 1.05 1 0.95 .02 .015 .01 0.9 .005 0.85 0.8 -20 0 20 40 60 80 100 120 140 0 0 1 TJ – Junction Temperature ( ˚C ) 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) All measurements were done with substrate shortened to source. EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 | | PAGE 3 eGaN® FET DATASHEET EPC2818 Figure 11: Transient Thermal Response Curves Normalized Maximum Transient Thermal Impedance ZθJB, Normalized Thermal Impedance 1 Duty Factors: 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 t1 Single Pulse 0.001 0.0001 PDM 10-5 10-4 t2 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJB x RθJB + TB 10-3 10-2 10-1 1 10 100 tp, Rectangular Pulse Duration, seconds Normalized Maximum Transient Thermal Impedance ZθJC, Normalized Thermal Impedance 1 Duty Factors: 0.5 0.1 0.2 0.1 PDM 0.05 t1 0.01 0.02 0.01 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJC x RθJC + TC Single Pulse 0.001 t2 10-6 10-5 10-4 10-3 10-2 10-1 1 tp, Rectangular Pulse Duration, seconds Figure 12: Safe Operating Area I D- Drain Current (A) 100 10 10 µs 100 µs limited by RDS(ON) 1 0.1 1 ms 10 ms 100 ms/DC TJ = Max Rated, TC = +25°C, Single Pulse 0.1 1 10 100 1000 VDS - Drain-Source Voltage (V) EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 | | PAGE 4 eGaN® FET DATASHEET EPC2818 TAPE AND REEL CONFIGURATION 4mm pitch, 12mm wide tape on 7” reel b e d g f Loaded Tape Feed Direction Die orientation dot 7” reel c a Gate solder bar is under this corner Die is placed into pocket solder bar side down (face side down) EPC2818 Dimension (mm) a b c (note 2) d e f (note 2) g target min max 12.0 1.75 5.50 4.00 4.00 2.00 1.5 11.9 1.65 5.45 3.90 3.90 1.95 1.5 12.3 1.85 5.55 4.10 4.10 2.05 1.6 Note 1: Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole. DIE MARKINGS 2818 YYYY Die orientation dot ZZZZ Gate Pad solder bar is under this corner A f 3 Lot_Date Code Marking line 2 Lot_Date Code Marking Line 3 2818 YYYY ZZZZ 4 High Lead Bump Finish: 95%Pb/5%Sn f X5 5 6 DIM 7 c B d X2 2 Part # Marking Line 1 EPC2818 DIE OUTLINE Solder Bar View Laser Markings Part Number 1 e g g X4 A B c d e f g MIN micrometers Nominal MAX 3524 1602 1379 577 262 245 600 3554 1632 1382 580 277 250 600 3584 1662 1385 583 292 255 600 (690) 85 +/-15 SEATING PLANE 800 Max Side View EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 | | PAGE 5 eGaN® FET DATASHEET EPC2818 The land pattern is solder mask defined. RECOMMENDED LAND PATTERN (units in µm) 3 4 5 6 7 802 1 Pad no. 1 is Gate; Pads no. 3, 5, 7 are Drain; Pads no. 4, 6 are Source; Pad no. 2 is Substrate 2 600 600 X4 1362 1632 560 3554 230 230 X5 Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. eGaN® is a registered trademark of Efficient Power Conversion Corporation. U.S. Patents 8,350,294; 8,404,508; 8,431,960; 8,436,398 EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 | Information subject to change without notice. Revised March, 2014 | PAGE 6