EDC-660-19-01

7-Segment LED-Chip Preliminary Radiation Red 1000 EDC-660-19-01 6/22/2007 Type Diffusion type Technology GaAsP/GaAs rev. 05/07 Electrodes P (anode) up typ. dimensions (µm) 30 425 typ. thickness 330 µm cathode 1130 Application This miniature device is an excellent choice for applications where small size and reduced space are important factors such as complex displays in optical devices for laboratory, measurement, control- and medical equipment. Au-alloy metalization anode Al metalization Miscellaneous Parameters Tamb = 25° unless otherwise specified C, Parameter Temperature coefficient of λC Operating temperature range Storage temperature range Test сonditions Ta = -40..120° C Symbol TC(λC) Tamb Tstg Value 0.15 -30 to +100 -40 to +125 Unit nm/K ° C ° C Optical and Electrical Characteristics Tamb = 25° unless otherwise specified C, Test Parameter conditions1 IF = 5 mA Forward voltage Forward voltage Reverse voltage Luminous intensity/segment 2 Symbol VF VF VR Iv Iv Iv Min Typ 1.7 1.8 Max 1.9 2.1 Unit V V V IF = 20 mA IR = 100 µA IF = 5 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA 5 60 280 85 400 710 1.75 2.00 µcd µcd µcd Luminous intensity/segment2 Luminous intensity/segment3 IV ratio segment to segment IV ratio to adjacent chip Peak wavelength Spectral bandwidth at 50% 1 2 2 λp ∆λ0.5 650 660 17 670 nm nm Current for one segment Measured on bare chip on TO-18 header 3 Measured on epoxy covered chip on TO-18 header Labeling Type EDC-660-19-01 Lot N° IV(typ) [µcd] VF(typ) [V] Quantity Packing: Chips in wafer pack or on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1