2SB1649

Equivalent circuit C Darlington 2SD2562 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2562 100max 100max 150min 5000min∗ 2.5max 3.0max 70typ 120typ V V MHz pF 16.2 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2562 150 150 5 15 1 85(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA V 9.5±0.2 µA 23.0±0.3 a b 1.75 2.15 1.05 5.45±0.1 1.5 4.4 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (µs) 0.8typ tstg (µs) 4.0typ tf (µs) 1.2typ 5.45±0.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 15 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) 3 I C – V BE Temperature Characteristics (Typical) 15 (V CE =4V) 10mA 50mA 3mA 2m A 1.5 mA 1. 0m A Collector Current I C (A) 10 0.5mA 2 Collector Current I C (A) 0. 8m A 10 emp mp) I C =.15A I C =.10A 1 I C =.5A ) e Te eT Cas ˚C ( I B =0.3mA 5 25˚C 0 0 2 4 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1 Base-Emittor Voltage V B E (V) –30˚C 125 (Cas 5 (Cas e Te mp) 2 3.0 2.2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) (V C E =4V) 50000 DC Cur r ent Gai n h F E DC Cur r ent Gai n h F E 50000 12 5˚C (V C E =4V) θ j- a ( ˚ C/ W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3.0 Typ 10000 5000 Transient Thermal Resistance 10000 5000 1.0 25 ˚C 0.5 –30 ˚C 1000 500 02 0.5 1 Collector Current I C (A) 5 10 15 1000 500 02 0.5 1 Collector Current I C (A) 5 10 15 0.1 1 10 100 Time t(ms) 1000 2000 f T – I E Characteristics (Typical) (V C E =12V) 80 Safe Operating Area (Single Pulse) 100 P c – T a Derating Maxim um Power Dissipatio n P C (W) Cu t-off Fre quen cy f T (M H Z ) 80 60 W ith In 60 fin ite 40 he at si nk 40 20 20 Without Heatsink 0 25 50 75 100 125 150 0 –0.02 –0.05 –01 –0.5 –1 –5 –10 3.5 0 Emitter Current I E (A) Ambient Temperature Ta(˚C) 160