JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3CA8772
TRANSISTOR( PNP )
TO— 126
FEATURES Power dissipation PCM : 1.25 W(Tamb=25℃) Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS( Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)
1 . EMITTER 2.COLLECTOR 3 .BASE
123
u nless
Test
otherwise
MIN
specified)
TYP MAX UNIT V V V -10 -10 -10 μA μA μA
conditions
Ic=-100μA ,IE=0 IC= -10 mA , IB=0 IE= -100 μA,IC=0 VCB= -40 V , IE=0 VCE=-30 V , IB=0 VEB=-6V , IC=0
-40 -30 -6
VCE= -2V, IC= -1A IC=-2A, IB= -0.2A VCE= -5V, I =-0.1A C
60
400 -0.5 V
Transition frequency
f
T
f = 10MHz
50
MHz
CLASSIFICATION OF h FE(1)
Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400
TO-126 PACKAGE OUTLINE DIMENSIONS
D
A1
A
E
b1 L
e e1
L1 b C Dimensions In Millimeters Min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.100 3.200 0.176 0.602 0.083 0.154 0.118 Max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 Min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.090TYP 0.184 0.618 0.091 0.161 0.126
P
φ
Symbol A A1 b b1 c D E e e1 L L1 P φ
Dimensions In Inches Max 0.114 0.059 0.034 0.054 0.024 0.307 0.433
很抱歉,暂时无法提供与“3CA8772”相匹配的价格&库存,您可以联系我们找货
免费人工找货