BF115

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN SILICON PLANAR RF TRANSISTOR BF115 TO-72 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Continuous Total Power Dissipation @ Ta=45ºC Operating & Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient SYMBOL VCBO VCEO VEBO IC IB PD Tj, Tstg VALUE 50 30 5 30 1 145 -55 to +175 UNIT V V V mA mA mW °C Rth(j-a) 900 °C/W ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise ) VALUE TYP MAX DESCRIPTION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut off Current DC Current Gain Base Emitter On Voltage DYNAMIC CHARACTERISTICS Transition Frequency Feedback Capacitance Noise Figure SYMBOL TEST CONDITION MIN 30 50 5 UNIT V V V µA BVCEO* IC=2mA, IB=0 BVCBO BVEBO ICBO hFE VBE(on) IC=10µA, IE=0 IE=10µA, IC=0 VCB=20V, IE=0, Ta=175ºC IC=1mA,VCE=10V IC=20mA*,VCE= 2V IC=1mA,VCE=10V IC=20mA,VCE= 2V* fT Cre NF IC=1.0mA, VCE=10V, f=100MHz VCB=10V,IC=1mA,f=0.45MHz VCE=10V, IC=1mA, Rg=300KΩ, f=200KHz f=1MHz 0.5 48 40 600 700 740 1000 230 0.65 1.5 1.2 0.8 167 mV mV MHz pF dB dB Pulse Test: pulse Width