OM6001ST

OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST OM6102ST OM6104ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • • • Isolated Hermetic Metal Package Bi-Lateral Zener Gate Protection (Optional) Fast Switching, Low Drive Current Ease Of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener clamps in the OM6101ST series. MAXIMUM RATINGS PART NUMBER OM6001ST/OM6101ST OM6002ST/OM6102ST OM6003ST/OM6103ST OM6004ST/OM6104ST Note: VDS 100 V 200 V 400 V 500 V RDS(on) .20 .44 1.05 1.60 ID 14 A 9A 5.5 A 4.5 A 3.1 OM6101ST thru OM6104ST is supplied with zener gate protection. OM6001ST thru OM6004ST is supplied without zener gate protection. SCHEMATIC WITHOUT ZENER CLAMPS OM6001ST - 6004ST 1 - DRAIN WITH ZENER CLAMPS OM6101ST - 6104ST 1 - DRAIN 3 - GATE 3 - GATE ZENERS 2 - SOURCE 2 - SOURCE 4 11 R4 Supersedes 1 07 R3 3.1 - 71 3.1 OM6001ST - OM6104ST ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage (OM6101) Gate-Body Leakage (OM6001) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 14 1.2 0.1 0.2 (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage (OM6102) Gate-Body Leakage (OM6002) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 9.0 1.25 0.1 0.2 (TC = 25°C unless otherwise noted) STATIC P/N OM6101ST / OM6001ST (100V) Min. Typ. Max. Units Test Conditions 100 2.0 4.0 ± 500 ± 100 0.25 1.0 V V nA nA mA mA A 1.60 0.20 0.40 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = ± 12.8 V VGS = ± 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 8 A VGS = 10 V, ID = 8 A VGS = 10 V, ID = 8 A, TC = 125 C STATIC P/N OM6102ST / OM6002 ST (200V) Min. Typ. Max. Units Test Conditions 200 2.0 4.0 ± 500 ± 100 0.25 1.0 V V nA nA mA mA A 2.2 0.44 0.88 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = ± 12.8 V VGS = ± 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A, TC = 125 C VDS(on) Static Drain-Source On-State VDS(on) Static Drain-Source On-State gfs Ciss Coss Crss td(on) tr td(off) tf 4.0 750 250 100 15 35 38 23 S(W ) VDS 2 VDS(on), ID = 8 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @ 8 A Rg = 7.5 W , VDS = 10 V gfs Ciss Coss Crss td(on) tr td(off) tf 3.0 5.8 780 150 55 9 18 45 27 S(W ) VDS 2 VDS(on), ID = 5.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75V, ID @ 5.0 A Rg = 7.5 W , VGS =10 V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Diode Forward Voltage1 Reverse Recovery Time 100 - 14 - 56 - 2.5 - 2.5 A A V V ns Modified MOSPOWER symbol showing G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Diode Forward Voltage1 Reverse Recovery Time 250 -9 - 36 -2 -2 A A V V ns the integral P-N Junction rectifier. TC = 25 C, IS = -14 A, VGS = 0 TC = 25 C, IS = -12 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms VSD VSD trr 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) Forward Transductance1 (W ) 3.1 - 72 DYNAMIC DYNAMIC Forward Transductance1 Modified MOSPOWER symbol showing G D the integral P-N Junction rectifier. S TC = 25 C, IS = -9 A, VGS = 0 TC = 25 C, IS = -8 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage (OM6103) Gate-Body Leakage (OM6003) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 5.5 2.4 0.1 0.2 (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage (OM6104) Gate-Body Leakage (OM6004) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 2.9 4.5 0.1 0.2 (TC = 25°C unless otherwise noted) STATIC P/N OM6103ST / OM6003ST (400V) Min. Typ. Max. Units Test Conditions 400 2.0 4.0 ± 500 ± 100 0.25 1.0 V V nA nA mA mA A 3.15 1.05 2.0 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = ± 12.8 V VGS = ± 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A, TC = 125 C STATIC P/N OM6104ST / OM6004ST (500V) Min. Typ. Max. Units Test Conditions 500 2.0 4.0 ± 500 ± 100 0.25 1.0 V V nA nA mA mA A 3.25 4.00 1.6 3.3 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = ± 12.8 V VGS = ± 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A, TC = 125 C VDS(on) Static Drain-Source On-State VDS(on) Static Drain-Source On-State gfs Ciss Coss Crss td(on) tr td(off) tf 3.0 3.6 700 70 20 18 20 40 25 S(W ) VDS 2 VDS(on), ID = 3.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 175 V, ID @ 3.0 A Rg = 10 W ,VGS = 10 V gfs Ciss Coss Crss td(on) tr td(off) tf 2.5 2.8 700 90 30 18 20 42 25 S(W ) VDS 2 VDS(on), ID = 2.5 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 225 V, ID @ 2.5 A Rg = 7.5 W , VGS = 10 V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Diode Forward Voltage1 Reverse Recovery Time 470 - 5.5 - 22 - 1.6 - 2.5 A A V V ns Modified MOSPOWER symbol showing G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 - 4.5 - 18 - 1.4 -2 430 the integral P-N Junction rectifier. A V V ns TC = 25 C, IS = -5.5 A, VGS = 0 TC = 25 C, IS = -4.5 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms VSD VSD trr Diode Forward Voltage1 Reverse Recovery Time 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) A Forward Transductance1 (W ) 3.1 - 73 DYNAMIC DYNAMIC Forward Transductance1 Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D OM6001ST - OM6104ST S TC = 25 C, IS = -4.5 A, VGS = 0 TC = 25 C, IS = -4 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms 3.1 OM6001ST - OM6104ST ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter VDS VDGR ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C PD @ TC = 100°C Junction To Case Junction To Ambient TJ Tstg Lead Temperature Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current2 Continuous Drain Current2 Pulsed Drain Current1 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Linear Derating Factor Operating and Storage Temperature Range (1/16" from case for 10 secs.) -55 to 150 300 -55 to 150 300 -55 to 150 300 -55 to 150 300 °C °C OM6001ST OM6002ST OM6003ST OM6004ST Units OM6101ST OM6102ST OM6103ST OM6104ST 100 100 ±14 ±9 ±56 50 20 0.4 .015 200 200 ±9 ±6 ±36 50 20 0.4 .015 400 400 ±5.5 ±3.5 ±22 50 20 0.4 .015 500 500 ±4.5 ±3 ±18 50 20 0.4 .015 V V A A A W W W/°C W/°C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package Pin Limitations = 16 amps THERMAL RESISTANCE (MAXIMUM) at TA = 25°C RthJC RthJA Junction-to-Case Junction-to-Ambient 2.5 65 °C/W °C/W Free Air Operation POWER DERATING PD - POWER DISSIPATION (WATTS) 90 75 60 45 30 RθJC = 2.5° C/W MECHANICAL OUTLINE WITH PIN CONNECTION .420 .410 .200 .190 .045 .035 .665 .645 .537 .527 .430 .410 .038 MAX. 3.1 .150 .140 123 15 0 0 25 50 75 100 125 150 175 TC - CASE TEMPERATURE (C°) Pin 1: Drain Pin 2: Source Pin 3: Gate .750 .500 .005 .035 .025 .100 TYP. .120 TYP. PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246