RMPA0913C-58

RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier PRODUCT INFORMATION Description The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for increased power added efficiency and linearity.The device uses Raytheon’s Pseudomorphic High Electron Mobility Transistor (pHEMT) process. Positive supply voltage of 3.5V, nominal Power Added Efficiency of 56%, typical, at power out of 31.5 dBm Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm Small outline metal based quad plastic package Features Absolute Maximum Ratings Parameter Positive DC Voltage Negative DC Voltage Simultaneous (Vd-Vg) RF Input Power (from 50-Ohm source) Operating Case Temperature (Case) Storage Temperature Range Thermal Resistance Symbol Vd1,Vd2 Vg1,Vg2 Vdg PIN TC TStg RTj-c Value +9 -6 +12 +10 -30 to 110 -35 to 110 15 Units Volts Volts Volts dBm °C °C °C/W Electrical Characteristics (Specifications at o 25 C operating free air temperature unless otherwise stated) Parameter Min Typ Max Unit MHz dB dB/°C dB dBm/Hz --dBc dBc dBm Parameter Efficiency Pin = 7 dBm, Vdd= 3.5V Po = 31.5 dBm, Vdd = 3.5V Po = 28.5 dBm , Vdd= 3.5V Po = 10 dBm , Vdd= 3.5V ACPR 2 (Offset ≥ ± 900 kHz) (Offset ≥ ± 1.98 MHz) Noise Figure (over temp) Vdd Vg1, Vg2 (