B12V11400

BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: Bipolarics' B12V114 is a high performance silicon bipolar transistor intended for use in low noise applications at VHF, UHF and microwave frequencies. These applications include narrowband and wideband amplifiers, oscillators and micropower transmitters. Typical applications include cellular telephone preamplifiers/mixers, CATV amplifiers and Part 15 receivers and transmitters. Commercial plastic, surface mount and hermetic (including Stripline) packaging options make this device very versatile; from consumer product to space flight. • • • • High Gain Bandwidth Product f = 10 GHz typ @ I C = 25mA t Low Noise Figure 1.4 dB typ at 1.0 GHz 1.7 dB typ at 2.0 GHz High Gain | S 21 | 2 = 16.9 dB @ 1.0 GHz 12.0 dB @ 2.0 GHz Dice, Plastic, Hermetic and Surface Mount packages available Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS VCBO VCEO VEBO IC T (1) J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 20 12 1.5 60 200 -65 to 150 V V V mA o C o C PERFORMANCE DATA: • Electrical Characteristics (T A = 25oC) SYMBOL PARAMETERS & CONDITIONS VCE = 8V, I C = 25 mA unless stated TSTG (1) Depends on package UNIT MIN. TYP. MAX. f t Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz f = 2.0 GHz f = 1.0 GHz f = 1.0 GHz GHz dB dB dBm dBm 10.0 16.9 12.0 18.0 15.0 |S 21 | 2 P1d B G1d B NF hFE ICBO IEBO CCB Power output at 1dB compression: Gain at 1dB compression: Noise Figure: VCE = 8V, I C = 10mA Forward Current Transfer Ratio: VCE = 8V, IC =25 mA Collector Cutoff Current : VCB = 8V Emitter Cutoff Current : VEB = 1V Collector Base Capacitance: VCB = 8V f = 1.0 GHz f = 1MHz dB 30 1.4 150 300 µA µA f = 1MHz pF 0.25 0.2 1.0 PAGE 2 BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: S-MATRIX: V CE = 8 V , I C = 1 0 mA Z L = 5 0.0 + J 0.0 Z S = 5 0.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. GHz Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang S21 dB 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 0.5956 0.5821 0.5248 0.5188 0.4786 0.4518 0.4623 0.5688 0.5432 0.5559 0.5956 0.5888 0.6998 0.6918 0.6382 0.6531 0.6683 0.7161 0.7079 0.6683 0.6760 -62 -114 -134 -149 -164 -168 -175 166 164 157 146 142 138 132 131 127 124 115 113 116 109 15.84 12.02 9.120 7.244 6.456 5.370 4.841 4.315 3.758 3.630 3.388 3.090 2.917 2.754 2.511 2.344 2.213 2.162 1.972 1.927 1.840 147 132 114 106 99 92 89 85 84 78 74 71 69 65 63 61 59 56 53 52 48 0.0251 0.0446 0.0512 0.0602 0.0676 0.0741 0.0812 0.0901 0.1023 0.1135 0.1202 0.1230 0.1333 0.1396 0.1479 0.1548 0.1603 0.1698 0.1698 0.1778 0.1927 59 56 50 52 55 56 58 59 60 58 60 62 64 65 66 67 68 69 68 72 69 0.7244 0.6309 0.4466 0.4466 0.3235 0.3311 0.2660 0.2454 0.2722 0.2317 0.2187 0.1905 0.1995 0.1927 0.1883 0.1862 0.1737 0.2137 0.1862 0.2089 0.2041 -29 -45 -50 -54 -52 -52 -63 -61 -63 -65 -75 -79 -86 -93 -97 -106 -111 -123 -132 -127 -132 24.0 21.6 19.2 17.2 16.2 14.6 13.7 12.7 11.5 11.2 10.6 9.8 9.3 8.8 8.0 7.4 6.9 6.7 5.9 5.7 5.3 PAGE 3 BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: S-MATRIX: V CE = 8 V, I C = 2 5 mA Z L = 5 0.0 + J 0.0 Z S = 5 0.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. GHz S11 Mag Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang S21 dB 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 0.4466 0.4897 0.4677 0.4731 0.4365 0.4120 0.4365 0.5623 0.5308 0.5495 0.5888 0.5821 0.6165 0.6309 0.6309 0.6456 0.6606 0.6918 0.6531 0.6531 0.6683 -96 -128 -154 -157 -166 -170 176 170 158 152 142 137 135 130 129 124 121 115 112 114 107 17.78 14.28 10.35 8.317 6.998 5.888 5.128 4.518 4.168 3.981 3.758 3.273 3.126 2.917 2.630 2.483 2.371 2.317 2.113 2.089 1.949 143 124 108 100 86 80 87 84 83 78 73 71 69 65 64 61 60 56 54 54 49 0.0229 0.0380 0.0457 0.0562 0.0645 0.0758 0.0812 0.0922 0.1059 0.1161 0.1288 0.1333 0.1462 0.1531 0.1621 0.1678 0.1757 0.1862 0.1862 0.1995 0.2162 61 58 59 61 64 65 68 69 68 64 66 67 69 69 70 68 70 69 70 73 70 0.5888 0.4677 0.3090 0.2951 0.2398 0.2483 0.2089 0.1905 0.1972 0.1659 0.1445 0.1303 0.1428 0.1258 0.1348 0.1288 0.1230 0.1905 0.1445 0.1584 0.1819 -36 -53 -56 -58 -54 -53 -65 -65 -70 -70 -84 -88 -100 -109 -114 -124 -131 -137 -156 -141 -152 25.0 23.1 20.3 18.4 16.9 15.4 14.2 13.1 12.4 12.0 11.5 10.3 9.9 9.3 8.4 7.9 7.5 7.3 6.5 6.4 5.8 PAGE 4 BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: S-MATRIX: V CE = 8 V , I C = 4 0 mA Z L = 5 0.0 + J 0.0 Z S = 5 0.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. GHz S11 Mag Ang Mag S21 Ang Mag S12 Ang Mag S22 Ang S21 dB 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 0.4027 0.4786 0.4731 0.4623 0.4365 0.4168 0.4365 0.5623 0.5370 0.5495 0.5888 0.5888 0.6237 0.6382 0.6382 0.6531 0.6606 0.7079 0.6606 0.6606 0.6760 -100 -138 -163 -164 -170 174 173 168 155 150 140 135 133 128 127 123 120 114 111 113 106 18.30 14.45 10.71 8.317 6.998 5.888 5.128 4.466 4.120 3.935 3.715 3.235 3.090 2.884 2.630 2.454 2.317 2.290 2.089 2.065 1.949 141 122 106 88 94 88 86 83 81 77 72 70 68 65 63 61 60 56 54 53 49 0.0208 0.0346 0.0436 0.0524 0.0602 0.0707 0.0794 0.0901 0.1035 0.1148 0.1230 0.1288 0.1428 0.1513 0.1584 0.1659 0.1737 0.1862 0.1862 0.1995 0.2187 63 60 62 66 69 70 71 72 70 68 70 72 73 74 73 73 75 74 74 77 74 0.5370 0.4120 0.2754 0.2570 0.2137 0.2238 0.1883 0.1757 0.1862 0.1548 0.1318 0.1135 0.1258 0.1148 0.1202 0.1202 0.1148 0.1412 0.1380 0.1513 0.1737 -40 -53 -55 -58 -52 -54 -67 -65 -70 -69 -84 -98 -100 -109 -116 -128 -134 -145 -158 -143 -156 25.25 23.20 20.6 18.4 16.9 15.4 14.2 13.0 12.3 11.9 11.4 10.2 9.8 9.2 8.4 7.8 7.3 7.2 6.4 6.3 5.8 PAGE 5 BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 04 Package: 0.145" Plastic X-PAC 86 Package: 0.085" Plastic,Surface Mount 0.02 .51 1 2 0.032+0.015 2.34+0.38 0.008+0.002 0.203+0.051 4 3 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 85 Package: 0.085" Plastic Micro-X 87 Package: 0.085" Plastic,Short Lead .020 .51 4 1 3 2 .60+0.10 1.52+.26 .065 2.15 5 .008+.002 .20+.050 .020 .51 .215+.010 5.46+.25 PAGE 6 BIPOLARICS, INC. 02 Package: SOT-23J 0.30 0.51 Part Number B12V114 02 Package: SOT-23 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 1.39 1.57 0.45 0.60 1.90 2.25 2.75 0.95 2.65 3.04 0.79 1.1 0.00 0.10 0.10 0.45 0.60 14 Package: SOT-143 92 Package: TO-92 PAGE 7 BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR ORDERING INFORMATION: P/N Including Pkg Temp Range/App -05 Package: Micro-X 0.085" Hermetic B12V114 B12V114 B12V114 B12V114 B12V114 00 02 14 35 92 -55 to +125˚C -40 to +85˚C -40 to +85˚C -55 to +125˚C -40 to +85˚C NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice LEAD 14, 85, 86, 87, 35, 36 & 04 Packages 1 Base 2 Emitter 3 Collector 4 Emitter BIPOLARICS, INC. 46766 Lakeview Blvd. Fremont, CA 94538 Phone: (510)226-6565 FAX: (510) 226-6765