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BUZ900

BUZ900

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    BUZ900 - N-CHANNEL POWER MOSFET - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
BUZ900 数据手册
MAGNA TEC 25.0 +0.1 -0.15 BUZ900 BUZ901 MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3 10.90 ± 0.1 POWER MOSFETS FOR AUDIO APPLICATIONS 30.2 ± 0.15 Ø 20 M ax. 39.0 ± 1.1 16.9 ± 0.15 1 2 Ø 1.0 FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE Case – Source • P–CHANNEL ALSO AVAILABLE AS BUZ905 & BUZ906 TO–3 Pin 1 – Gate Pin 2 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900 160V ±14V 8A 8A 125W –55 to 150°C 150°C 1°C/W BUZ901 200V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage BUZ900 BUZ901 STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions VGS = –10V ID = 10mA VDS = 0 VDS = 10V VGD = 0 BUZ900 BUZ901 IG = ±100µA ID = 100mA ID = 8A VDS = 160V IDSX Drain – Source Cut–Off Current VGS = –10V BUZ900 VDS = 200V BUZ901 yfs* Forward Transfer Admittance VDS = 10V ID = 3A 0.7 Min. 160 200 ±14 0.15 Typ. Max. Unit V V 1.5 12 10 V V mA 10 2 S DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Test Conditions VDS = 10V f = 1MHz VDS = 20V ID = 5A Min. Typ. 500 300 10 100 50 Max. Unit pF ns * Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%. 150 Derating Chart 125 CH AN NE L D ISS IP ATION (W ) 100 75 50 25 0 0 25 50 75 100 125 150 TC — CASE TEMPERATURE (˚C) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 MAGNA TEC 9 8 7 I D — D R AIN C U RR EN T (A) 5V BUZ900 BUZ901 Typical Output Characteristics 6V 9 8 7 I D — D R AIN C U RR EN T (A) Typical Output Characteristics TC = 75˚C 6V TC = 25˚C 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 V DS — DRAIN – SOURCE VOLTAGE (V) 4V 6 5 5V 10 Forward Bias Safe Operating Area DC TC = 25˚C AT I D — D R AIN C U RR EN T (A) IO N 1 G FS — TR AN SC ON DU C TAN CE (S) = P CH = P CH 12 5W 4 3 2 1 0 0 10 20 4V 12 5W 3V 3V 2V 2V 30 40 50 60 70 80 90 V DS — DRAIN – SOURCE VOLTAGE (V) 100 V DS = 20V Transconductance OP ER 10 TC = 25˚C TC = 75˚C 0.1 BUZ900 BUZ901 1 160V 0.01 1 10 100 200V 0.1 1000 0 1 2 3 4 5 6 7 8 I D — DRAIN CURRENT (A) V DS — DRAIN – SOURCE VOLTAGE (V) Drain – Source Voltage vs 10 Gate – Source Voltage TC = 25˚C 9 8 7 I D — D R AIN C UR R EN T (A) Typical Transfer Characteristics V DS = 10V TC = 25˚C TC = 75˚C V DS — DR AIN – S OU RC E V OLTAGE (V ) 8 6 TC = 100˚C 6 I D = 6A 5 4 3 2 4 I D = 3A 2 I D = 1A 1 0 0 0 2 4 6 8 10 12 14 V GS — GATE – SOURCE VOLTAGE (V) 0 1 2 3 4 5 6 7 8 V GS — GATE – SOURCE VOLTAGE (V) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
BUZ900 价格&库存

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