D6002

Silicore RADIO CONTROLLED RECEIVER IC D ESCRIPTI ON Th e D6 00 2 i s a bi po la r in teg r ate d str aig h t th r ou g h r ec eiv er c ir cu it in th e f r equ en cy r an ge f r om 40 k Hz u p t o 2 00 kH z w it h A S K m od u la tio n . Th e I C r ece iv er s an d d em od ul at es ti me co de sig n als tr an smi tt ed b y D CF 77 ,M S F , W W V B an d G2 A S. Th e d evi ces is d esig n ed fo r r adi o c on tr o lle d cl oc k a pp li cat io ns wi th v er y hi gh sen si tiv i ty. I nt eg r ated f un ct io ns as s tan d b y mo de an d co m pl em en ta ry ou t pu t st age s off er fe atu r es f or u ni ve rsa l app li cat io ns. Th e BI P 2 te chn o log y m ak es al l th e abo v e f eat ur es po ssib le f or ve ry l ow co st ap p lic ati on s. D6002 O ut li ne D ra wi ng F EATURE S in g le chi p str ai gh t thr o ug h r ece ive r. L o w po w er ba tt er y a pp li cati on s( 1. 1~ 3.6 V ) Ver y lo w p ow er c on sum p ti on . P ow e r do wn mo du s. W i de f re qu en cy r ang e ( 4 0~ 20 0k Hz ) Ver y h ig h se nsi ti vi ty. H ig h sel ecti vi ty b y qua rt z re son ato r. C o m p le men ta ry o u tp ut sta ge s. M in im u m ex te rn al co m po ne nt s. A PPLICATIONS R e cei ve r fo r t im e c od e t r ans mit te r sig n al ’ s R e cei ver fo r AS K m o d ul ate d d at e si gn al ’ s. SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn 1/6 CHMC Silicore BLOCK DIAGRAM CD1 CD2 O1 O2 IC CD3 CDEM VDD D6002 IA1 + IA2 OD1 OD2 RF Amp (RF Amp) (Post Amp) GND1 Post Amp - Vcc Bias Comparator Gain Peak Control Detector CAGC STOP PON GND3 GND2 PIN DEFI NITI ON P in 1 2 3 4 5 6 7 8 9 10 PON S ym b ol GND2 CD1 CD2 IA1 V cc IA2 VDD OD1 OD2 GN D 1 D esc ri p ti on G ro u nd 2 (R F sta ge s). D eco u pli ng ca pa cit or C 1 D eco up li n g c ap acit o r C 1 A n ten na i np ut 1 S up p ly v ol tag e A n ten na i np ut 2 S u pp ly vo l tag e f o r co m pa ra to r an d ou tp ut st age D ata o ut pu t 1 ( p ul l do wn ) D at a o ut pu t 2 (p ul l up ) G r ou nd 1 (o u tp ut sta ge s) P in 11 12 13 14 15 16 17 18 19 20 S ym b ol PON S TOP C AG C C DE M GN D 3 NC CD 3 IC O2 O1 D esc ri p tio n P ow er o n A GC st op A GC ca pa cit or D em od u lat io n cap aci to r G r ou nd 3 (P o st amp li f ier ) N ot c on ne cte d D ec ou pl in g cap aci to r C2 C ry st al in pu t N o n- in v er tin g RF ou tpu t I n ver t in g RF o u tp ut P ow er o n/ off c on tr ol If P O N is co nn ect ed to G ND / Vc c t he D 60 02 r ece iv er is acti v e/st an d- by. OD1 D a ta o u tp ut 1 The ou tp u t si gn al can d ir e ctl y d ec od ed b y a m ic ro p ro ce ssor. The ou tp ut O D 1 i s a P NP o pe n co ll ect o r stag e w i th hi gh ac tiv e l o gi c. Th e co n nec tio n wi th a n ext er na l re sist or o f 1 00 k OD2 D a ta o u tp ut 2 t o GN D i s po ssib l e. Th e ou tp ut O D 2 is a N P N o p en co ll ect or stag e w it h lo w ac ti ve lo g ic. Th e con n ect io n w it h an ex ter n al re sist or o f 1 00 k t o V cc is p o ssib le. 2/6 SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC Silicore G ND 1 G r ou nd 1 D6002 G N D1 i s th e c on tr ol gr ou nd po te ntia l f or th e com p let e ci r cui t. G N D1 h av e to co nn ec ted t o G N D 2/ GN D 3. G ND 2 G r ou nd 2 Th e P in GN D 2 i s t he g r ou nd po ten ti al f o r t he RF am pl if i er and ha s t o co n nec ted t o G ND 1 . G ND 3 G r ou nd 3 Th e P in G N D 3 is th e gr ou n d po ten t ial f or th e P o st am pl if ie r an d h as to co n nec ted to G N D1 . S TO P A G C sto p I f S TO P is c on ne cte d t o G N D/ V cc th e A G C c ir cu it is o ff /o n CA G C A G C cap aci to r Th e P i n CA G C i s co nn ect ed to an ex te rn al cap aci to r aga in st GN D . I t i s ne cessar y t o g en er at e th e pea k v al ue of t he de mo d ul ato r o utp u t v ol ta ge sig nal . The pe ak val ue co nt r ol s th e A G C. CD EM D em od u lat io n cap aci to r Th e P in CD EM i s c on ne cte d to an ex te rn al c ap aci to r ag ai nst G N D. I t is n ecessar y f or t h e d em o du lat io n of th e A M sig n al. CD 3 D eco u pli ng c apac it or C2 The P in CD 3 is co n ne cte d t o an e xt er na l ca pac it or ag ai nst GN D . I t is n ec essar y fo r th e st ab il ity o f th e p ost am pl if ie r. Th e v alu es o f t he e xt er na l cap ac ito r i n fl ue nc e t h e f re qu en cy r esp on se of th e p o st am pl if ie r. A BSOLUTE MAXIMUM RATI NGS ( Ta =25 C) Ch ar a cte ri sti c S u pp ly Vol tag e V cc S u pp ly Vol tag e V D D O ut pu t Vo lt ag e O D 1 O ut pu t Vo lt ag e O D 2 S w it ch Vo lt ag e S TOP S w it ch Vo lt ag e P O N J u nc tio n Te mp er at ur e St or ag e Tem pe r atu r e R an ge El ect r ost ati c h an dl in g ( M IL s tan da rd 8 63 C ) S ym b ol V cc VDD VOD1 VOD2 VSTOP VPO N Tj Tst g ES D M in 0 0 - 0 .3 - 0 .3 - 0 .3 - 0. 3 -5 5 -5 5 - 20 0 0 Ma x 5 .5 5 .5 V D D + 0.3 V D D + 0.3 V D D + 0.3 V D D + 0.3 1 50 1 50 + 20 00 U ni t V V V V V V C C V 3/6 SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC Silicore ELECTRI CAL CHARACTERISTICS D6002 ( Th ey ap ply w it h in th e sp ec if ie d o pe r ati ng co nd it io ns un le ss o th erw ise sp eci fi ed .) Ch ar a cte ri sti cs O ut pu t pu lse Du r ati on ( OD 1 ,O D2 ) I np u t Vol tag e( I C) I np ut R esist anc e( IA 1 ,I A2 ) I np u t R esist anc e( IC ) I np u t R esi st an ce De mo du l ato r RF - g ai n R F ga in O ut pu t Vo lt age D em od u la to r S y m bo l tWODk VIN IC Test c on di tio n s M in 170 30 Ty p 195 6 00 4 00 50 Ma x 230 30 0 Un i t ms Vr m s k k k dB dB V p- p RIN RIN RIN GRF GRF VOUT max min DEM V C A G C =0 V V C A G C =V cc 56 -40 0 .2 5 T ES T CIRCUIT VDD 6.8nF CD1 Tr 1M IA2 IA1 C1 CD2 O1 O2 Q1 IC C2 CD3 C3 CDEM VDD + RF Amp Post Amp OD1 - OD2 Vc c Vc c PON Bias Comparator (RF Amp) Gain Peak (Post Amp) Control Detector GND1 GND3 GND2 CAGC 4.7uF C4 STOP SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn 4/6 CHMC Silicore TYPICAL APPLICATION CIRCUI T O1 O2 VDD IC CD1 6.8nF 1.8nF~6.8nF CD2 IA1 IA2 VDD Vcc GND1 GND2 GND3 CD3 47nF CDEM 22nF CAGC 4.7uF STOP PON OD2 OD1 D6002 Antenna L1 f R EG =77.5kHz D 6 0 0 2 µc VDD=3V APPLICATION CI RCUIT for WWVB 60kHz O1 O2 VDD IC CD1 6.8nF 1.8nF~6.8nF CD2 IA1 IA2 VDD Vc c GND1 GND2 GND3 CD3 47nF CDEM 22nF CAGC 4.7uF 5/6 Antenna L1 f R EG =60kHz D 6 0 0 2 STOP PON OD2 OD1 µc VDD=3V SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC Silicore APPLICATION CI RCUI T for MS F 50k Hz O1 O2 VDD IC CD1 6.8nF 1.8nF~6.8nF CD2 IA1 IA2 VDD Vcc GND1 GND2 GND3 CD3 47nF CDEM 22nF CAGC 4.7uF STOP PON OD2 OD1 D6002 Antenna L1 f R EG =50kHz D 6 0 0 2 µc VDD=3V APPLICATION HINT ’ S T h e P C B has to b e d esi gn ed f or RF co nd it ion s. Th e f e rr it e a nt enn a is a cr it ica l dev i ce s of t h e c om pl et e c lo ck r ecei ve r. Th e di me nsi on in g o f th e an ten na r eso n ant r esi sta nce is a co mp r o mi se be tw ee n hi gh si gn al vo l tag e and low an ten na n oi se v o lt age . Th e Q -f ac to r o f an ten na sh ou ld be hi gh f or a tt enu at io n of in fe ren ce sig n al ’ s. I n t he ap pl ic ati o n cir cu i t i s t he Rr ef Q =8 0. To ach iev e a hi g h sel ect iv it y th e p ar asit ic p ar al lel cap acit an ce o f th e cr y sta l sho u ld b e 1 ~1 .5p F. F or a t r ou bl e- fr ee re cep ti on th e ca pac it or o n G ND an d CD 3 h av e t o b e ar r an ged n ear by th e chi p f oo t pr in ts. 1 0 0k, SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn 6/6 CHMC