IS354

IS354 HIGH DENSITY MOUNTING AC INPUT, PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS354 is an optically coupled isolator consisting of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES l l l l l Dimensions in mm Marked as FPA1. Current Transfer Ratio MIN. 20% Isolation Voltage (3.75kVRMS ,5.3kVPK ) All electrical parameters 100% tested Drop in replacement for Sharp PC354 APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 22/4/02 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92856l-AAS/A3 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation ±50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation (derate linearly 2.26mW/°C above 25°C) 35V 6V 150mW 170mW ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) MIN TYP MAX UNITS 1.2 5 10 35 6 100 20 400 1.4 V V µA V V nA % TEST CONDITION IF = ±20mA IR = 10µA VR = 4V IC = 0.1mA IE = 10uA VCE = 20V ±1mA IF , 5V VCE Output Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 3750 5300 0.2 V ±20mA IF , 1mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω VRMS VPK 4 3 18 18 Ω µs µs Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 Measured with input leads shorted together and output leads shorted together. 22/4/02 DB92856l-AAS/A3 TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 ) 12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1 CHARACTERISTIC CURVES Fig.1 Forward Current vs. Ambient Temperature 60 50 40 30 20 10 0 - 55 Fig.2 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation Pc (mW) 0 25 50 75 100 o (mA) 150 Forward current I F 100 50 125 0 -55 0 25 50 75 100 o 125 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 6 Ic= 0.5mA 1mA 3mA 5mA 7mA O Fig.4 Forward Current vs. Forward Voltage 500 o Collector-emitter saturation voltage VCE (sat) (V) Ta= 25 C (mA) 5 4 3 2 1 200 100 50 20 10 5 2 Ta= 75 C 50 C o 25 C 0C -25 C o o o 0 0 2.5 5.0 7.5 10.0 12.5 15.0 Forward current I F ( mA) Forward current I F 1 0 0.5 10 15 20 25 30 Forward voltage V F (V) Fig.5 Current Transfer Ratio vs. Forward Current 140 VCE= 5V Ta= 25 C o Fig.6 Collector Current vs. Collector-emitter Voltage 50 Ta= 25 C o Current transfer ratio CTR (%) 120 100 80 60 40 20 0 0.1 0.2 Collector current Ic (mA) 40 I F = 30mA 30 Pc(MAX.) 20mA 10mA 10 5mA 1mA 0 20 0.5 1 2 5 10 20 50 100 0 1 2 3 4 5 6 7 8 9 10 Forward current I F ( mA) Collecotr-emitter voltage V CE (V) 12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1 CHARACTERISTIC CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 150 Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.10 Collector-emitter saturation voltage VCE(sat) (V) I F = 1mA, V CE = 5V Relative current transfer ratio (%) I F = 20mA I C = 1mA 0.08 100 0.06 0.04 50 0.02 0 20 40 60 80 o 0 100 20 40 60 80 o 100 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. vs. Ambient Temperature 10000 Fig.10 Response Time vs. Load Resistance 100 50 20 VC E = 2V Ic = 2mA o Ta= 25 C (nA) VCE= 20V CEO Response time ( s) 1000 tr tf td ts Collector Dark Current I 10 5 2 1 0.5 0.2 100 10 1 20 40 60 80 o 0.1 100 0.1 0.2 0.5 1 2 5 10 Ambient Temperature Ta ( C) Load resistance R L ( k ) Fig.11 Frequency Response Test Circuit for Response Time Vcc Input Input Output Output 10% 90% td ts tr tf 0 V = 2V Ic= 2mA o Ta= 25 C RD RL Voltage gain Av (dB) R L = 1k -10 1k 100 Test Circuit for Frequency Response Vcc RD -20 0.2 0.5 1 2 5 10 100 1000 Frequency f (kHz) RL Output 12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1 TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 230 C 200 C 180 C 1 minute 25 C 2 minutes 1.5 minutes 1 minute (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1