SC2412KLT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 2SC2412K*LT1 3 1 BASE 2 EMITTER 1 2 CASE 318–07, STYLE 6 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V EBO SOT– 23 (TO–236AB) Value 50 60 7.0 150 0.2 150 -55 ~+150 Unit V V V mAdc W °C °C IC PC Tj T stg DEVICE MARKING 2SC2412K*LT1 =G1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= – 2mA, f =30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz ) Symbol V V V (BR)CEO Min 50 7 60 — — — 120 — — Typ — — — — — — –– 180 2.0 Max — — — 0.1 0.1 0.4 560 –– 3.5 Unit V V V µA µA V –– MHz pF (BR)EBO (BR)CBO I CBO I EBO V CE(sat) h FE fT C ob h FE values are classified as follows: hFE * Q 120~270 R 180~390 S 270~560 M36–1/3 LESHAN RADIO COMPANY, LTD. 2SC2412K*LT1 Fig.1 Grounded emitter propagation characteristics 50 Fig.2 Grounded emitter output characteristics( ) 100 0.50mA T A = 25°C VCE= 6 V 20 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) 80 10 50 T A = 100°C 25°C 60 2 1 – 55°C 40 0.5 20 0.2 0.1 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6 0 0 0.4 0.8 1.2 1.6 2.0 V BE , BASE TO EMITTER VOLTAGE(V) V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.3 Grounded emitter output characteristics( ) 10 Fig.4 DC current gain vs. collector current ( ) 500 I C, COLLECTOR CURRENT (mA) 8 6 h FE, DC CURRENT GAIN 0 4 8 12 16 20 200 100 4 50 2 20 0 10 0.2 0.5 1 2 5 10 20 50 100 200 V CE , COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (mA) Fig.5 DC current gain vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.6 Collector-emitter saturation voltage vs. collector current 0.5 500 0.2 h FE, DC CURRENT GAIN 200 0.1 100 0.05 50 0.02 20 0.01 0.2 0.5 1 2 5 10 20 50 100 200 10 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) M36–2/3 LESHAN RADIO COMPANY, LTD. 2S2412K*LT1 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 0.5 Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.9 Gain bandwidth product vs. emitter current Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) 20 f r , TRANSITION FREQUENCY(MHz) 500 10 200 5 100 2 50 –0.5 –1 –2 –5 –10 –20 –50 –100 1 0.2 0.5 1 2 5 10 20 50 I E, EMITTER CURRENT (mA) V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) Fig.11 Base-collector time constant vs.emitter current C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) 200 100 50 20 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) M36–3/3