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STYN710S

STYN710S

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    STYN710S - Discrete Thyristors(SCRs) - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
STYN710S 数据手册
STYN210(S) thru STYN1010(S) Discrete Thyristors(SCRs) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 G A K A G K Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 Dimensions TO-263(D2PAK) A G K Dim. A A1 b b2 c c2 D D1 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side L L1 L2 L3 L4 R ABSOLUTE R ATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t V alue Critical rate of rise of on-state current Gate supply:IG = 100mA dIG/dt = 1A/µs Storage junction temperature range Operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case TYN 210 VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 200 410 400 610 600 810 800 1010 1000 V Value Tc = 100°C Tc = 100°C tp = 8.3 ms tp = 10 ms tp = 10 ms 10 6.4 105 100 50 50 - 40 to + 150 - 40 to + 125 260 Unit A A A A2S A/µs °C °C I ²t dI/dt Tstg Tj Tl STYN210(S) thru STYN1010(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s STA NDARD Symbol IGT VGT VGD tgt IH IL dV/dt VTM tq IDRM IRRM VD = 12 V VD = VDRM Test Conditions RL = 33 W RL = 3.3 kW Tj = 25°C Tj = 25°C Tj = 110°C Tj = 25°C Tj = 25°C Tj = 25°C Gate open µs Tj = 110°C Tj = 25°C Tj = 110°C Tj = 25°C Tj = 110°C MAX. 2 MAX. MAX. MIN. TYP MAX. TYP MIN. MAX. TYP TYNx08(S) 15 1.5 0.2 2 30 50 200 1.6 70 0.01 Unit mA V V µs mA mA V/µs V µs mA mA VD = VDRM IG =40mA dIG/dt = 0.5 A/µs IT = 100 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 20 A Gate open tp = 380 µs VD = 67 % VDRM I T M=20A V R =25V dI T M/dt=30 A/µs dV D /dt=50V /µs VDRM rated VRRM rated THERMA L RESISTANCES Symbol Rth(j-c) Rth(j-a) J unction to case (DC) Junction to ambient (DC) S =1.0 cm ² S= copper surface under tab Parameter Value 2.5 TO-220AB TO-263 60 45 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Par t Num ber Sen sitivi ty Package STYN x10S S T Y N x10 200~~1000 200~~1000 15 mA 15 mA TO-263 T O-2 20AB OTHER INFORMATION Part Number STYN x10S S T Y N x10 No t e: x = voltage Marking STYN x10S S T Y N x10 Weight 1.5 g 2.3 g Base Quantity 50 250 Packing mode Tu be B ulk
STYN710S 价格&库存

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