WMF128K8-120CI5

WMF128K8-XXX5 HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES s Access Times of 50*, 60, 70, 90, 120, 150ns s Packaging • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101) • 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) • 32 lead, Flatpack (Package 220) • 32 lead, Formed Flatpack (Package 221) • 32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601) s 100,000 Erase/Program Cycles Minimum s Sector Erase Architecture • 8 equal size sectors of 16KBytes each • Any combination of sectors can be concurrently erased. Also supports full chip erase s Organized as 128Kx8 s Commercial, Industrial and Military Temperature Ranges s 5 Volt Programming. 5V ± 10% Supply. s Low Power CMOS s Embedded Erase and Program Algorithms s TTL Compatible Inputs and CMOS Outputs s Page Program Operation and Internal Program Control Time. Note: For programming information refer to Flash Programming 1M5 Application Note. * The access time of 50ns is available in Industrial and Commercial temperature ranges only. PIN CONFIGURATION FOR WMF128K8-XXX5 32 DIP 32 CSOJ 32 FLATPACK PIN CONFIGURATION FOR WMF128K8-XCLX5 32 CLCC TOP VIEW A12 NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS TOP VIEW A15 A16 VCC WE NC VCC WE NC A14 A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 4 3 2 1 32 31 30 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 A14 A13 A8 A9 A11 OE A10 CS I/O7 I/O1 I/O2 I/O3 I/O4 I/O5 PIN DESCRIPTION A0-16 I/O0-7 CS OE WE VCC VSS Address Inputs Data Input/Output Chip Select Output Enable Write Enable +5.0V Power Ground April 2001 Rev. 5 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com I/O6 VSS NC WMF128K8-XXX5 ABSOLUTE MAXIMUM RATINGS (1) Parameter Operating Temperature Supply Voltage Range (VCC) Signal voltage range (any pin except A9) (2) Storage Temperature Range Lead Temperature (soldering, 10 seconds) Data Retention Mil Temp Endurance (write/erase cycles) Mil Temp A9 Voltage for sector protect (VID) (3) -55 to +125 -2.0 to +7.0 -2.0 to +7.0 -65 to +150 +300 10 10,000 min. -2.0 to +14.0 Unit °C V V °C °C years cycles V Parameter Address Input capacitance Output Enable capacitance Write Enable capacitance Chip Select capacitance Data I/O capacitance RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Operating Temp. (Ind.) A9 Voltage for Sector Protect Symbol V CC V IH V IL TA TA VID Min 4.5 2.0 -0.5 -55 -40 11.5 Max 5.5 V CC + 0.3 +0.8 +125 +85 12.5 Unit V V V °C °C V CAPACITANCE (T A = +25°C) Symbol CAD COE CWE CCS CI/O Conditions VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz Max Unit 15 15 15 15 15 pF pF pF pF pF NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns. 3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may overshoot to 14.0 V for periods up to 20ns. This parameter is guaranteed by design but not tested. DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Input Leakage Current Output Leakage Current VCC Active Current for Read (1) V CC A ctive Current for Program or Erase ( 2) V CC S tandby Current Output Low Voltage Output High Voltage Output High Voltage Low V CC L ock Out Voltage Symbol I LI I LO ICC1 I CC2 I CC3 V OL V OH1 V OH2 V LKO Conditions V CC = 5.5, V IN = GND to VCC V CC = 5.5, V IN = GND to VCC CS = VIL, OE = VIH CS = V IL , OE = V IH V CC = 5 .5, CS = V IH , f = 5MHz I OL = 8 .0 mA, V CC = 4 .5 I OH = - 2.5 mA, V CC = 4 .5 I OH = - 100 µA, V CC = 4 .5 0.85 x V CC V CC - 0 .4 3.2 Min Max 10 10 35 50 1.6 0.45 Unit µA µA mA mA mA V V V V NOTES: 1. The I CC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. I CC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: V IL = 0.3V, VIH = V CC - 0.3V AC TEST CIRCUIT I OL Current Source AC TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V D.U.T. C eff = 50 pf VZ ≈ 1.5V (Bipolar Supply) I OH Current Source NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z 0 = 75 Ω. V Z is typically the midpoint of V OH and V OL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 2 WMF128K8-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55 °C to +125°C) Parameter Symbol Min Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Hold Time Write Enable Pulse Width High t AVAV t ELWL t WLWH t AVWL t DVWH t WHDX t WLAX t WHEH t WHWL t WC t CS t WP t AS t DS t DH t AH t CH t WPH 50 0 25 0 25 0 40 0 20 14 2.2 0 t VCS 50 12.5 tOES tOEH 0 10 0 10 60 -50 Max Min 60 0 30 0 30 0 45 0 20 14 2.2 0 50 12.5 0 10 60 -60 Max -70 Min 70 0 35 0 30 0 45 0 20 14 2.2 0 50 12.5 0 10 60 Max -90 Min 90 0 45 0 45 0 45 0 20 14 2.2 0 50 12.5 0 10 60 Max -120 Min 120 0 50 0 50 0 50 0 20 14 2.2 0 50 12.5 0 10 60 Max -150 Min 150 0 50 0 50 0 50 0 20 14 2.2 0 50 12.5 60 Max ns ns ns ns ns ns ns ns ns µs sec ns µs sec ns ns Unit Duration of Byte Programming Operation (min) t WHWH1 Sector Erase Time Read Recovery Time Before Write VCC Setup Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time (1) 1. For Toggle and Data Polling. t WHWH2 t GHWL AC CHARACTERISTICS – READ ONLY OPERATIONS (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Read Cycle Time Address Access Time Chip Select Access Time OE to Output Valid Chip Select to Output High Z (1) OE High to Output High Z (1) Output Hold from Address, CS or OE Change, whichever is first 1. Guaranteed by design, not tested. Symbol t AVAV t AVQV t ELQV t GLQV t EHQZ t GHQZ t AXQX t RC t ACC t CE t OE t DF t DF t OH 0 50 50 50 25 20 20 0 -50 Min Max 60 60 60 30 20 20 0 -60 Min Max 70 70 70 35 20 20 0 -70 Min Max 90 90 90 40 25 25 0 -90 Min Max -120 Min 120 120 120 50 30 30 0 Max -150 Min 150 150 150 55 35 35 Max ns ns ns ns ns ns ns Unit 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Write Cycle Time WE Setup Time CS Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time WE Hold from WE High CS Pulse Width High Duration of Programming Operation Duration of Erase Operation Read Recovery before Write Chip Programming Time Symbol t AVAV t WLEL t ELEH t AVEL t DVEH t EHDX t ELAX t EHWH tEHEL t WHWH1 t WHWH2 t GHEL t WC t WS t CP t AS t DS t DH t AH t WH tCPH 50 0 25 0 25 0 40 0 20 14 2.2 0 12.5 60 -50 Min Max 60 0 30 0 30 0 45 0 20 14 2.2 0 12.5 60 -60 Min Max 70 0 35 0 30 0 45 0 20 14 2.2 0 12.5 60 -70 Min Max Min 90 0 45 0 45 0 45 0 20 14 2.2 0 12.5 60 -90 Max -120 Min 120 0 50 0 50 0 50 0 20 14 2.2 0 12.5 60 Max -150 Min 150 0 50 0 50 0 50 0 20 14 2.2 0 12.5 60 Max ns ns ns ns ns ns ns ns ns µs sec ns sec Unit White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 4 WMF128K8-XXX5 AC WAVEFORMS FOR READ OPERATIONS tDF tOH Addresses Stable tRC tOE tACC tCE WE OE Addresses 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com Outputs CS High Z Output Valid High Z WMF128K8-XXX5 WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED tRC tOH tDF tOE Data Polling tAH tWHWH1 PA tAS tWPH tDH 5555H tGHWL tWC tWP tCS A0H PD I/O7 PA I/OOUT NOTES : 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. I/O 7 is the output of the complement of the data written to the device. 4. I/O OUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. Addresses WE OE CS tDS White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 6 5.0 V Data tCE WMF128K8-XXX5 AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS SA 2AAAH 5555H 2AAAH 5555H tWPH tAS 5555H tWP AAH tDS tGHWL tCS tDH 55H tAH 80H AAH 55H 10H/30H Addresses WE OE CS Data NOTES: 1. SA is the sector address for Sector Erase. 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com VCC tVCS WMF128K8-XXX5 AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS t DF t OH High Z I/O7 = Valid Data I/O0-7 Valid Data tWHWH 1 or 2 Data I/O0-6 I/O0-6 = Invalid t OE t OE t CH tOEH tCE White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 8 WE OE CS I/O7 I/O7 WMF128K8-XXX5 WRITE/ERASE/PROGRAM OPERATION, CS CONTROLLED PA Data Polling tAH tWHWH1 PA tAS tGHEL tCP tCPH tDH A0H 5555H tWC tWS PD WE OE CS tDS Addresses I/O7 I/OOUT NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. I/O 7 is the output of the complement of the data written to the device. 4. I/O OUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. 9 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 5.0 V Data WMF128K8-XXX5 PACKAGE 101: 32 LEAD, CERAMIC SOJ 21.1 (0.830) ± 0.25 (0.010) 0.2 (0.008) ± 0.05 (0.002) 3.96 (0.156) MAX 0.89 (0.035) Radius TYP 11.3 (0.446) ± 0.2 (0.009) 9.55 (0.376) ± 0.25 (0.010) 1.27 (0.050) ± 0.25 (0.010) PIN 1 IDENTIFIER 1.27 (0.050) TYP 19.1 (0.750) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 220: 32 LEAD, CERAMIC FLATPACK 20.83 (0.820) ± 0.25 (0.010) 2.60 (0.102) MAX PIN 1 IDENTIFIER 10.41 (0.410) ± 0.13 (0.005) 10.16 (0.400) ± 0.51 (0.020) 0.43 (0.017) ± 0.05 (0.002) 0.127 (0.005) + 0.05 (0.002) – 0.025 (0.001) 1.27 (0.050) TYP 19.05 (0.750) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 10 WMF128K8-XXX5 PACKAGE 221: 32 LEAD, FORMED CERAMIC FLATPACK 3.35 (0.132) MAX 20.83 (0.820) ± 0.25 (0.010) 0.15 (0.006) TYP 1.27 (0.050) TYP 10.41 (0.410) ± 0.13 (0.005) + + 13.47 (0.530) ± 0.13 (0.005) 0.43 (0.017) ± 0.05 (0.002) 0° / -4° 0.63 (0.025) TYP 1.27 (0.050) TYP 19.05 (0.750) TYP 1.52 (0.060) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 42.8 (1.686) MAX 5.13 (0.202) MAX PIN 1 IDENTIFIER 3.2 (0.125) MIN 0.99 (0.039) ± 0.51 (0.020) 2.5 (0.100) TYP 1.27 (0.050) ± 0.1 (0.005) 0.46 (0.018) ± 0.05 (0.002) 0.25 (0.010) ± 0.05 (0.002) 15.25 (0.600) ± 0.25 (0.010) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 11 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER 7.62 (0.300) TYP 3.81 (0.150) TYP 5.08 (0.200) TYP 0.56 (0.022) 0.71 (0.028) 10.16 (0.400) TYP PIN 1 0.38 (0.015) x 45° PIN 1 IDENTIFIER 11.25 (0.443) 11.60 (0.457) 1.63 (0.064) 2.54 (0.100) 13.79 (0.543) 14.15 (0.557) 1.02 (0.040) x 45° 3 PLACES 32PinCLCCpkgdim.eps ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 12 WMF128K8-XXX5 ORDERING INFORMATION W M F 128K8 - XXX X X 5 X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads VPP PROGRAMMING VOLTAGE 5 = 5V DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened I = Industrial C = Commercial PACKAGE TYPE: DE = 32 Lead Ceramic SOJ (Package 101) C = 32 Pin Ceramic DIP (Package 300) FE = 32 Lead Ceramic Flatpack (Package 220) FF = 32 Lead Formed Ceramic Flatpack (Package 221) CL = 32 Pin rectangular Ceramic Leadless Chip Carrier (Package 601) ACCESS TIME (ns) ORGANIZATION, 128K x 8 Flash MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. -55°C to +125°C -40°C to +85°C 0°C to +70°C 13 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 DEVICE TYPE 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic SECTOR SIZE 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte SPEED 150ns 120ns 90ns 70ns 60ns 150ns 120ns 90ns 70ns 60ns PACKAGE 32 pin DIP (C) 32 pin DIP (C) 32 pin DIP (C) 32 pin DIP (C) 32 pin DIP (C) 32 lead SOJ (DE) 32 lead SOJ (DE) 32 lead SOJ (DE) 32 lead SOJ (DE) 32 lead SOJ (DE) SMD NO. 5962-96690 01HYX 5962-96690 02HYX 5962-96690 03HYX 5962-96690 04HYX 5962-96690 05HYX 5962-96690 01HXX 5962-96690 02HXX 5962-96690 03HXX 5962-96690 04HXX 5962-96690 05HXX 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 16KByte 16KByte 16KByte 16KByte 16KByte 150ns 120ns 90ns 70ns 60ns 32 lead Flatpack (FE) 32 lead Flatpack (FE) 32 lead Flatpack (FE) 32 lead Flatpack (FE) 32 lead Flatpack (FE) 5962-96690 01HTX 5962-96690 02HTX 5962-96690 03HTX 5962-96690 04HTX 5962-96690 05HTX 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 16KByte 16KByte 16KByte 16KByte 16KByte 150ns 120ns 90ns 70ns 60ns 32 lead Formed Flatpack (FF) 32 lead Formed Flatpack (FF) 32 lead Formed Flatpack (FF) 32 lead Formed Flatpack (FF) 32 lead Formed Flatpack (FF) 5962-96690 01HUX 5962-96690 02HUX 5962-96690 03HUX 5962-96690 04HUX 5962-96690 05HUX White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 14