2MBI150UB-120
IGBT Module U-Series
Features
· High speed switching · Voltage drive · Low inductance module structure
1200V / 150A 2 in one-package
Equivalent Circuit Schematic
C1 E2
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
C2E1 G1 E1 G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions
Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C
Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2
1 device
AC:1min.
Rating 1200 ±20 200 150 400 300 150 300 780 +150 -40 to +125 2500 3.5 3.5
Unit V V A
W °C VAC N·m
*1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=150A VGE=±15V RG=4.7 Ω VGE=0V IF=150A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 1.90 – 2.15 – 1.75 – 2.00 – 17 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.75 – 1.85 – 1.60 – 1.70 – – – 0.97 Unit Max. 2.0 400 8.5 2.25 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.05 – 1.90 – 0.35 – mA nA V V
Input capacitance Turn-on time
nF µs
Turn-off time Forward on voltage
V
Reverse recovery time Lead resistance, terminal-chip*3
IF=150A
µs mΩ
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.025 Unit Max. 0.16 0.24 – °C/W °C/W °C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
2MBI150UB-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
400 400
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip
VGE=20V 300 Collector current : Ic [A]
15V 12V 300 Collector current : Ic [A]
VGE=20V 15V
12V
200 10V
200 10V
100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
400 10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip
Collector - Emitter voltage : VCE [ V ]
300 Collector current : Ic [A]
T j=25°C
T j=125°C
8
6
200
4
100
2
Ic=300A Ic=150A Ic=75A
0 0 1 2 3 4 5
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C
100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=150A, Tj= 25°C
Capacitance : Cies, Coes, Cres [ nF ]
Cies 10.0
VGE
Cres 1.0 Coes
VCE 0 300 600 900
0.1 0 10 20 30
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
2MBI150UB-120
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj= 25°C
10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000
IGBT Module
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj=125°C
1000 ton toff tr 100 tf
1000 toff ton tr 100
tf
10 0 100 200 300 Collector current : Ic [ A ]
10 0 100 200 300 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 30 25 20
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=4.7Ω
Eoff(125°C) Eon(125°C)
ton toff 1000
Eoff(25°C) 15 10 Err(125°C) 5 0 Err(25°C) Eon(25°C)
tr 100 tf
10 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0
0
100
200
300
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
150 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 100 Collector current : Ic [ A ] 300 400
Reverse bias safe operating area (max.) +VGE=15V,-VGE = 4.7Ω ,Tj
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