ATF1040S20Y

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - FAST SWITCHING THYRISTOR ATF1040 Repetitive voltage up to Mean on-state current Surge current Turn-off time Conditions FINAL SPECIFICATION mag 97 - ISSUE : 06 2000 1075 14 50 Tj [°C] 125 125 125 V A kA µs Unit Symbol Characteristic Value BLOCKING V V V I I I I I V V r RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current Mean on-state current Mean on-state current Surge on-state current, non repetitive I² t On-state voltage Threshold voltage On-state slope resistance Critical rate of rise of on-state current, min Critical rate of rise of off-state voltage, min Gate controlled delay time, typical Circuit commutated turn-off time Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation Pulse width 100 µs From 75% VDRM up to 1200 A, gate 10V 5 ohm Linear ramp up to 70% of VDRM VD=100V, gate source 20V, 10 ohm , tr=1 µs di/dt = dV/dt = di/dt = VR = 20 60 50 A/µs, I= I1000800 = A A VDRM 200 V/µs , up to 75% V V=VRRM V=VDRM 180° sin, 50 Hz,Th=55°C, double side cooled 180° sin, 1 kHz,Th=55°C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 2000 A 2000 2100 2000 150 150 1075 1000 V V V mA mA A A kA A²s V V mohm A/µs V/µs µs µs µC A mA mA V mA V V A V W W 125 125 CONDUCTING T (AV) T (AV) TSM 125 25 125 125 125 125 25 125 125 25 25 25 25 125 25 25 25 25 25 14 980 x1E3 2.6 1.40 0.414 500 500 0.6 50 620 227 500 850 3.5 350 0.25 30 10 5 150 3 I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I V I V V I V P P H L A/µs, I= I10001000 A = A VD=5V, gate open circuit VD=5V, tp=30µs VD=5V VD=5V VD=VDRM GATE GT GT GD FGM FGM RGM GM G(AV) MOUNTING R T F th(j-h) j Thermal impedance, DC Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled 26 -30 / 125 14.0 / 17.0 500 °C/kW °C kN g tq code ORDERING INFORMATION : ATF1040 S 20 S standard specification tq code VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs ATF1040 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 ANSALDO SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 1800 1000 A 1600 1400 1200 Qrr [µC] 1000 800 600 400 200 0 0 50 100 150 200 250 300 350 di/dt [A/µs] 250 A 500 A REVERSE RECOVERY CURRENT Tj = 125 °C 1000 1000 A 500 A 800 250 A 600 Irr [A] 400 200 0 0 50 100 150 200 250 300 350 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Irr tb Vr Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) ATF1040 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 ANSALDO ON-STATE CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 3500 3000 On-state Current [A] 2500 2000 1500 1000 500 0 0.6 1.1 1.6 2.1 2.6 On-state Voltage [V] ITSM [kA] 14 12 10 8 6 4 2 0 1 10 n° cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 35 30 25 Zth j-h [°C/kW] 20 15 10 5 0 0.001 0.01 0.1 t[s] 1 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with clamping force, cleaned and lubricated heatsink, surfaces with flatness < and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over background) and characteristics is reported. uniform .03 mm change shaded