BUXXTA2WHFV

Silicon Monolithic IC STRUCTURE PRODUCT NAME Silicon Monolithic Integrated Circuit CMOS-type Series Regulator BUXXTA2WHFV 1/4 ＢＵｘｘＴＡ２ＷＨＦＶSeries VIN 3 ○ BLOCK DIAGRAM and APPLICATION CIRCUIT VIN Cin 2 VREF + VOUT 4 VOUT GND OCP VSTBY STBY 1 Co PIN No. 1 2 3 4 5 PIN NAME STBY GND VIN VOUT N.C. DESCRIPTION OUTPUT CONTROL Pin (High: ON, Low: OFF) GROUND Pin INPUT Pin OUTPUT Pin No Connect STBY 5 N.C. Discharge Cin･･･1.0 μF (Ceramic) Co ･･･1.0 μF (Ceramic) Fig.1 BLOCK DIAGRAM and APPLICATION CIRCUIT ○ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Symbol Limit VMAX Power Supply Voltage -0.3 ～ +6.5 Power Dissipation Pd 410 (*1) Maximum junction temperature TjMAX +125 Operating Temperature Range Topr -40 ～ +85 Storage Temperature Range Tstg -55 ～ +125 (*1 )Pd derated at 4.1mW/℃ at temperatures above Ta = 25℃, mounted on 70×70×1.6 mm glass-epoxy PCB. ○ RECOMMENDED OPERATING RANGE (not to exceed Pd) PARAMETER Power Supply Voltage Maximum Output Current Symbol VIN IMAX Unit V mW ℃ ℃ ℃ Limit 2.5 ～ 5.5 200 Unit V mA Status of this document The Japanese version of this document is the official specification. Please use the translation version of this document as a reference to expedite understanding of the official version. If there is any uncertainty in translation version of this document, official version takes priority. Nov./05/2008 A TSZ02201-BUXXTA2WHFV-1-2 Silicon Monolithic IC ● OPERATING CONDITIONS PARAMETER Symbol MIN. Input Capacitor Cin 0.5(*2) Output Capacitor Co 0.5(*2) BUXXTA2WHFV 2/4 TYP. 1.0 1.0 MAX. - Unit μF μF CONDITION Ceramic capacitor recommended (*2) Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias, changing as time progresses characteristic. ● ELECTRICAL CHARACTERSTICS (Ta=25℃, VIN= VOUT + 1.0 V (VOUT=1.5V, 1.8V, 2.3V : VIN=3.5V), STBY=1.5 V, Ci=1.0 μF, Co=1.0 μF, unless otherwise noted.) PARAMETER Overall Device Symbol MIN. VOUT×0.99 VOUT-25mV Limit TYP. MAX. VOUT×1.01 VOUT+25mV Unit Conditions Output Voltage VOUT VOUT 40 70 V μA μA IOUT=10μA，VOUT≧2.5V IOUT=10μA，VOUT＜2.5V IOUT=0mA STBY=0V VRR=-20dBv,fRR=1kHz,IOUT=10mA 1.5V≦VOUT≦1.8V VRR=-20dBv,fRR=1kHz,IOUT=10mA 2.3V≦VOUT VOUT=2.3V (VIN=0.98*VOUT,IOUT=200mA) 2.5V≦VOUT≦2.6V (VIN=0.98*VOUT,IOUT=200mA) 2.7V≦VOUT≦2.85V (VIN=0.98*VOUT,IOUT=200mA) 2.9V≦VOUT≦3.1V (VIN=0.98*VOUT,IOUT=200mA) 3.2V≦VOUT≦3.4V (VIN=0.98*VOUT,IOUT=200mA) VIN=VOUT+1.0V to 5.5V,IOUT=10μA IOUT=0.01mA to 100mA Operating Current IIN Operating Current ISTBY (STBY) Ripple Rejection Ratio RR - 95 1 55 65 450 400 360 330 300 2 10 350 70 50 1000 - - dB 900 800 720 660 600 20 80 700 150 80 2000 5.5 0.3 mV mV mV mV mV mV mV mA mA Ω kΩ V V Dropout Voltage VSAT - VDL Line Regulation VDLO Load Regulation Over-current Protection (OCP) 220 20 20 500 1.5 -0.3 Limit Current Short Current Standby Block Discharge Resistor ILMAX ISHORT RDSC RSTB VSTBH VSTBL Vo=VOUT*0.8 Vo=0V VIN=4.0V, STBY=0V STBY Pin Pull-down Resistor Control Voltage ON OFF Output Voltage ON Output Voltage OFF ●This product is not designed for protection against radioactive rays. A TSZ02201-BUXXTA2WFHV-1-2 Silicon Monolithic IC ○ Power Dissipation Curves 0.6 Conditions BUXXTA2WHFV ○ Device Name and Marking 3/4 Device Name: BUXXTA2WHFV a 0.41W 0.4 Mounted on PCB. Size: 70mm×70mm×1.6mm Pd(W) symbol 0.2 Description Output XX Voltage 15 1.5V typ. 1.8V typ. 2.3V typ. 2.5V typ. 2.6V typ. 2.7V typ. 2.8V typ. 2.85V typ. 2.9V typ. 3.0V typ. 3.1V typ. 3.2V typ. 3.3V typ. 3.4V typ. Marking BA BB BC BD BE BF BG BH BJ BK BL BM BN BP 0 18 0 25 50 75 85 100 125 150 23 25 26 27 a Ta(℃) Fig.2 Pd reduction (example) Pd is changed by mount condition. Please refer the technical note about more detailed information of Pd. 28 2J 29 30 31 32 33 ○ Package dimensions (HVSOF5) 34 Device Mark Lot No. Fig.3 Package dimensions (Unit: mm) A TSZ02201-BUXXTA2WHFV-1-2 Silicon Monolithic IC ○Operation Notes 1.) Absolute maximum ratings BUXXTA2WHFV 4/4 Use of the IC in excess of absolute maximum ratings (such as the input voltage or operating temperature range) may result in damage to the IC. Assumptions should not be made regarding the state of the IC (e.g., short mode or open mode) when such damage is suffered. If operational values are expected to exceed the maximum ratings for the device, consider adding protective circuitry (such as fuses) to eliminate the risk of damaging the IC. 2.) GND potential The potential of the GND pin must be the minimum potential in the system in all operating conditions. Never connect a potential lower than GND to any pin, even if only transiently. 3.) Thermal design Use a thermal design that allows for a sufficient margin for that package power dissipation rating (Pd) under actual operating conditions. 4.) Inter-pin shorts and mounting errors Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting or shorts between pins may result in damage to the IC. 5.) Operation in strong electromagnetic fields Strong electromagnetic fields may cause the IC to malfunction. Caution should be exercised in applications where strong electromagnetic fields may be present. 6.) Common impedance Wiring traces should be as short and wide as possible to minimize common impedance. Bypass capacitors should be use to keep ripple to a minimum. 7.) Voltage of STBY pin To enable standby mode for all channels, set the STBY pin to 0.3 V or less, and for normal operation, to 1.5 V or more. Setting STBY to a voltage between 0.3 and 1.5 V may cause malfunction and should be avoided. Keep transition time between high and low (or vice versa) to a minimum. Additionally, if STBY is shorted to VIN, the IC will switch to standby mode and disable the output discharge circuit, causing a temporary voltage to remain on the output pin. If the IC is switched on again while this voltage is present, overshoot may occur on the output. Therefore, in applications where these pins are shorted, the output should always be completely discharged before turning the IC on. 8.) Over-current protection circuit (OCP) This IC features an integrated over-current and short-protection circuitry on the output to prevent destruction of the IC when the output is shorted. The OCP circuitry is designed only to protect the IC from irregular conditions (such as motor output shorts) and is not designed to be used as an active security device for the application. Therefore, applications should not be designed under the assumption that this circuitry will engage. 9.) Thermal shutdown circuit (TSD) This IC also features a thermal shutdown circuit that is designed to turn the output off when the junction temperature of the IC exceeds 175℃. This feature is intended to protect the IC only in the event of thermal overload and is not designed to guarantee operation or act as an active security device for the application. Therefore, applications should not be designed under the assumption that this circuitry will engage. 10.) Input/output capacitor Capacitors must be connected between the input/output pins and GND for stable operation, and should be physically mounted as close to the IC pins as possible (refer to figure 4). The input capacitor helps to counteract increases in power supply impedance, and increases stability in applications with long or winding power supply traces. The output capacitance value is directly related to the overall stability and transient response of the regulator, and should be set to the largest possible value for the application to increase these characteristics. During design, keep in mind that in general, ceramic capacitors have a wide range of tolerances, temperature coefficients and DC bias characteristics, and that their capacitance values tend to decrease over time. Confirm these details before choosing appropriate capacitors for your application.(Please refer the technical note, regarding ceramic capacitor of recommendation) Cout=1.0μF Cin=1.0μF Temp=+25℃ 100 Unstable region ESR[Ω] ] ESR [ Ω 10 1 0.1 0.01 0 50 100 IOUT [mA] 150 200 Stable region Fig.4 Stable region (example) TSZ02201-BUXXTA2WHFV-1-2 A