OM6425SP6

Preliminary Data Sheet OM6423SP6 OM6424SP6 OM6425SP6 OM6426SP6 POWER MOSFETS IN 11-PIN INDUSTRIAL SIP PACKAGE Industrial 11-Pin, 150 to 500 V, N-Channel Power MOSFET, Full “H” Bridge FEATURES • • • • Low RDS(on) Fast Switching Single SIP Package 3 Voltage, Current Ratings DESCRIPTION This series of “H” Bridge configured circuits provides the user with a low cost solution to power control. Ideally suited for stepper motors, limited span designs, lighting systems, and D.C. motor applications. 2.1 SCHEMATIC MECHANICAL OUTLINE 1.140 1.100 .550 .125 .250 .145 .250 MAX. .190 .062 .930 .690 .785 .115 1 2 3 4 5,6,7 8 9 10 11 .018 .100 1.000 .071 .057 .010 .250 MIN. FOR FURTHER INFORMATION, CONTACT FACTORY DIRECT OR YOUR LOCAL SALES REPRESENTATIVE. This document contains information on a new product. Specifications and information herein are subject to change without notice. 4 11 R1 Supersedes 2 07 R0 2.1 - 123 OM6423SP6 - OM6426SP6 ELECTRICAL CHARACTERISTICS: Characteristic Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25mA) Zero Gate Voltage Drain Current (VDS = Rated VDSS, VGS = 0) (VDS = Rated VDSS, VGS = 0, TJ = 85°C) Gate-Body Leakage Current, Forward (VGSF = ±20 Vdc, VDS = 0) Gate Threshold Voltage (VDS = VGS, ID = 250µA) Static Drain-Source-On-Resistance (VGS = 10Vdc) Drain-Source-On-Voltage (VGS = 10V, TJ = 85°C) Forward Transconductance (VDS = 10V, ID = 12A) Input Capacitance (VDS = 25V, Output Capacitance VGS = 0, Reverse Transfer Capacitance f = 1MHz) Turn-On Delay Time (VDD = 25V, ID = 2A) Turn-Off Delay Time (VDD = 25V, ID = 2A) Source Drain Diode Forward On Voltage If = 10 T = 25° unless otherwise noted. 6423SP6 Symbol Min. Max. V(BR)DSS 50 150 IDSS 250 1000 IGSSF 500 500 VGS(th) 2.0 4.0 rDS(on) @ ID = VDS(on) gFS Ciss Coss Crss td(on) td(off) VSD .02 .08 5.0 .4 8.0 700 450 180 20 110 1.6 6424SP6 Min. Max. 100 500 2.0 250 1000 500 Units Vdc µA nA V 4.0 .16 4.0 .64 5.0 850 260 50 30 40 1.6 A V mhos pF pF pF ns ns V 2.1 ELECTRICAL CHARACTERISTICS: Characteristic Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25mA) Zero Gate Voltage Drain Current (VDS = Rated VDSS, VGS = 0) (VDS = Rated VDSS, VGS = 0, TJ = 85°C) Gate-Body Leakage Current, Forward (VGSF = ±20 Vdc, VDS = 0) Gate Threshold Voltage (VDS = VGS, ID = 250µA) Static Drain-Source-On-Resistance (VGS = 10Vdc) Drain-Source-On-Voltage (VGS = 10V, TJ = 85°C) Forward Transconductance (VDS = 10V, ID = 12A) Input Capacitance (VDS = 25V, Output Capacitance VGS = 0, Reverse Transfer Capacitance f = 1MHz) Turn-On Delay Time (VDD = 25V, ID = 2A) Turn-Off Delay Time (VDD = 25V, ID = 2A) Source Drain Diode Forward On Voltage If = 4 T = 25° unless otherwise noted. 6425SP6 Symbol Min. Max. V(BR)DSS 200 IDSS 250 1000 IGSSF 500 500 VGS(th) 2.0 4.0 rDS(on) @ ID = VDS(on) gFS Ciss Coss Crss td(on) td(off) VSD .8 2.0 1.6 1.3 600 300 80 40 100 1.6 6426SP6 Min. Max. 500 500 2.0 250 1000 500 Units Vdc µA nA V 4.0 3.0 1.0 3.0 1.0 400 150 40 60 30 1.6 A V mhos pF pF pF ns ns V 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246