VP0808B/L/M, VP1008B/L/M
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M –100 –80
V(BR)DSS Min (V)
rDS(on) Max (W)
5 @ VGS = –10 V 5 @ VGS = –10 V 5 @ VGS = –10 V 5 @ VGS = –10 V 5 @ VGS = –10 V 5 @ VGS = –10 V
VGS(th) (V)
–2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5
ID (A)
–0.88 –0.28 –0.31 –0.79 –0.28 –0.31
Features
D D D D D High-Side Switching Low On-Resistance: 2.5 W Moderate Threshold: –3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF
TO-205AD (TO-39) (Case Drain) S 1
Benefits
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer
TO-226AA (TO-92)
Applications
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control
TO-237 (Tab Drain)
S
1
S
1
G VP0808B VP1008B D Top View
2 VP0808L VP1008L 3
G
2 VP0808M VP1008M 3
2 G
3
D
D
Top View
Top View
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS VGS ID IDM PD RthJA RthJC TJ, Tstg
VP0808Bb –80 "20 –0.88 –0.53 –3 6.25 2.5 20
VP0808L –80 "30 –0.28 –0.17 –3 0.8 0.32 156
VP0808M –80 "30 –0.31 –0.20 –3 1 0.4 125
VP1008Bb –100 "20 –0.79 –0.53 –3 6.25 2.5 20
VP1008L –100 "30 –0.28 –0.17 –3 0.8 0.32 156
VP1008M –100 "30 –0.31 –0.20 –3 1 0.4 125
Unit
V
A
Power Dissipation Dissipation
W _C/W _C
Maximum Junction-to-Ambient Maximum Junction-to-Case Operating Junction and Storage Temperature Range
–55 to 150
Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70218.
Siliconix P-37655—Rev. B, 25-Jul-94
1
VP0808B/L/M, VP1008B/L/M
Specificationsa
Limits
VP0808B/L/M VP1008B/L/M
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Leakage
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Unit
V(BR)DSS VGS(th) IGSS
VGS = 0 V, ID = –10 mA VDS = VGS, ID = –1 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = –80 V, VGS = 0 V
–110 –3.4
–80 –2 –4.5 "100 "500 –10 –500
–100 V –2 –4.5 "100 "500 nA
Zero Gate Voltage Drain Current Gate Voltage Drain Current
IDSS
TJ = 125_C VDS = –100 V, VGS = 0 V TJ = 125_C
–10 –500 –2 2.5 4.4 325 0.45 200 –1.1 5 8 200 –1.1 5 8
mA
On-State Drain
Currentc
ID(on) rDS( ) DS(on) gfs gos
VDS = –15 V, VGS = –10 V VGS = –10 V, ID = –1 A TJ = 125_C VDS = –10 V, ID = –0.5 A VDS = –7.5 V, ID = –0.1 A
A W
Drain-Source On-Resistancec On Forward Transconductance c Common Source Output Conductancec
mS
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = –25 V, VGS = 0 V V f = 1 MHz 75 40 18 150 60 25 150 60 25 pF
Switchingd
Turn-On Time Time td(on) tr Turn-Off Time Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = –25 V, RL = 47 W ID ^ –0.5 A, VGEN = -10 V -10 RG = 25 W 11 30 20 20 15 40 30 30 15 40 30 30 VPDV10 ns
2
Siliconix P-37655—Rev. B, 25-Jul-94
VP0808B/L/M, VP1008B/L/M
Typical Characteristics (25_C Unless Otherwise Noted)
Ohmic Region Characteristics
–2.0 TJ = 25_C –1.6 I D – Drain Current (A) VGS = –10 V I D – Drain Current (mA) –9 V –8 V –7 V –0.8 –6 V –0.4 –5 V –4 V 0 0 –1 –2 –3 –4 –5 VDS – Drain-to-Source Voltage (V) 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 VDS – Drain-to-Source Voltage (V) –16 –20 TJ = 25_C VGS = –4.0 V
Output Characteristics for Low Gate Drive
–1.2
–12
–3.8 V
–8 –3.6 V –3.4 V –3.2 V
–4
–0.5
Transfer Characteristics
7 TJ = –55_C 125_C rDS(on) – On-Resistance ( W ) 6
On-Resistance vs. Gate-to-Source Voltage
TJ = 25_C
–0.4 I D – Drain Current (A) VDS = –10 V –0.3
25_C
I D = 0.1 A 5 4 3 2 1 0.5 A 1.0 A
–0.2
–0.1
0 0 –2 –4 –6 –8 –10 VGS – Gate-Source Voltage (V)
0 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V)
10 rDS(on) – Drain-Source On-Resistance ( W )
On-Resistance vs. Drain Current
rDS(on) – Drain-Source On-Resistance (Normalized)
2.00 1.75 1.50 1.25 1.00 0.75 0.50
Normalized On-Resistance vs. Junction Temperature
VGS = –10 V ID = 0.5 A
8
6
4 VGS = –10 V 2
0 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 ID – Drain Current (A)
–50
–10
30
70
110
150
TJ – Junction Temperature (_C)
Siliconix P-37655—Rev. B, 25-Jul-94
3
VP0808B/L/M, VP1008B/L/M
Typical Characteristics (25_C Unless Otherwise Noted)
–10 VDS = –5 V I D – Drain Current (mA) 160 –1 TJ = 150_C 25_C 125_C –0.1 –55_C C – Capacitance (pF)
Threshold Region
200 VGS = 0 V f = 1 MHz
Capacitance
120 Ciss Coss 40 Crss
80
–0.01 –1.0
0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 –4.5 0 –10 –20 –30 –40 –50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
Gate Charge
–15.0 VGS – Gate-to-Source Voltage (V) –12.5 –10.0 VDS = –50 V –7.5 –5.0 –2.5 0 0 100 200 300 400 500 Qg – Total Gate Charge (pC) 1 10 –80 V ID = –0.5 A t – Switching Time (ns) 100
Drive Resistance Effects on Switching
tr tf td(off) 10 td(on)
VDD = –25 V RL = 50 W VGS = 0 to –10 V ID = –500 mA 20 50 RG – Gate Resistance (W) 100
1
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
t1 Notes: PDM
0.01 Single Pulse
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t)
t1 t2
0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec)
4
Siliconix P-37655—Rev. B, 25-Jul-94
很抱歉,暂时无法提供与“VP0808M”相匹配的价格&库存,您可以联系我们找货
免费人工找货