M1MA152KT1

Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. • Fast t rr , < 3.0 ns • Low C D , < 2.0 pF • Available in 8 mm Tape and Reel Use M1MA151/2KT1 to order the 7 inch/3000 unit reel. Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel. CATHODE 3 3 M1MA151KT1 M1MA152KT1 SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100mA SURFACE MOUNT 2 1 CASE 318D–03, STYLE2 2 1 ANODE NO CONNECTION SC–59 MAXIMUM RATINGS (T A = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current M1MA151KT1 M1MA152KT1 M1MA151KT1 M1MA152KT1 Symbol VR V RM IF I FM I FSM (1) Symbo PD TJ T stg Symbol IR VF VR CD t rr (2) Condition V R = 35 V V R = 75 V I F = 100 mA I R = 100 µA Value 40 80 40 80 100 225 500 lMax 200 150 -55 to +150 Max 0.1 0.1 1.2 — — 2.0 3.0 Unit Vdc Vdc mAdc mAdc mAdc Unit mW °C °C Unit µ Adc Vdc Vdc pF ns THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 2 5°C) Characteristic Reverse Voltage Leakage Current M1MA151KT1 M1MA152KT1 Forward Voltage Reverse Breakdown Voltage M1MA151KT1 M1MA152KT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. t rr Test Circuit Min — — — 40 80 V R = 0, f = 1.0 MHz — I F = 10 mA, V R = 6.0 V, — R L = 100Ω, I rr = 0.1 I R H2–1/2 M1MA151KT1 M1MA152KT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE t r OUTPUT PULSE t t I F rr t p t 10% R L 90% V R I rr = 0.1 I I F = 10 mA V R= 6 V R L = 100 Ω R t p = 2 µs t r = 0.35 ns DEVICE MARKING—EXAMPLE Marking Symbol Type No. Symbol 151K MH 152K MI MH X The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. H2–2/2