Silicon Tuning Diode
MMBV105GLT1
T his device is designed in the surface Mount package for general frequency control and tuning applications.It provides solid-state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ration
1 2 3
3 CATHODE
1 ANODE
CASE
318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 30 200 225 1.8 +125 –55 to +150 Unit Vdc mAdc mW mW/°C °C °C
DEVICE MARKING
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage ( I R=10µAdc) Reverse Voltage Leakage Current ( V R =28Vdc) Symbol V (BR)R IR Min 30 — Max — 50 Unit Vdc nAdc
Device Type
CT V R =25Vdc,f =1.0MHz pF Min Max
2.8
Q V R =3.0Vdc f=50MHz Typ
250
CR C 3/ C 25 f=1.0MHz Min
4.0
Max
6.5
MMBV105GLT1
1.5
I1–1/2
MMBV105GLT1
TYPICAL CHARACTERISTICS
20
1000
C T , DIODE CAPACITANCE (pF)
18
Q , FIGURE OF MERIT
16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30
V R = 3Vdc TA = 25°C
100
f = 1 .0MHz T A = 25°C
10 10 100 1000
V R , REVERSE VOLTAGE (VOLTS)
f , FREQUENCY ( MHz )
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT,DIODECAPACITANCE(NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 +100 +125
V R= 3.0Vdc f = 1 .0MHz
T A , AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
I1–2/2
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