MMUN2214RLT1

Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. ∗ Simplifies Circuit Design ∗ Reduces Board Space ∗ Reduces Component Count ∗ The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ∗ Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. PIN1 base (Input) R1 R2 PIN2 Emitter (Ground) PIN3 Collector (output) MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RL34 NPN SILICON BIAS RESISTOR TRANSISTOR 3 1 2 CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ T A = 25°C (1) Derate above 25°C Symbol VCBO V CEO IC PD Value 50 50 100 200 1.6 Value 625 –65 to +150 260 10 Unit Vdc Vdc mAdc mW mW/°C Unit °C/W °C °C Sec R2 (K) 10 22 47 47 THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol R θ JA TJ , Tstg TL DEVICE MARKING AND RESISTOR VALUES Device MMUN2211RLT1 Marking A8A R1 (K) 10 MMUN2212RLT1 A8B 22 MMUN2213RLT1 A8C 47 MMUN2214RLT1 A8D 10 MMUN2215RLT1 (2) A8E 10 MMUN2216RLT1 (2) A8F 4.7 MMUN2230RLT1 (2) A8G 1 MMUN2231RLT1 (2) A8H 2.2 MMUN2232RLT1 (2) A8J 4.7 MMUN2233RLT1 (2) A8K 4.7 MMUN2234RLT1 (2) A8L 22 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. 1 2.2 4.7 47 47 88 Q2–1/8 MMUN2211RLT1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol I CBO I CEO I EBO Min 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 Typ 60 100 140 140 350 350 5.0 15 30 200 150 Max 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.25 Unit nAdc nAdc mAdc OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB=50V, I E = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current MMUN2211RLT1 (VEB = 6.0 V, IC = 0) MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 Collector-Base Breakdown Voltage (IC=10mA, IE=0) Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0) V(BR)CBO V(BR)CEO hFE Vdc Vdc ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) ( 3) MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA) (IC = 10 mA, IB = 5 mA) MMUN2230RLT1 MMUN2231RLT1 (IC = 10 mA, IB = 1 mA) MMUN2215RLT1 MMUN2216RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 Output Voltage (on) (VCC=5.0V,VB=2.5V, RL=1.0kΩ) MMUN2211RLT1 MMUN2212RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 (VCC =5.0V,VB=3.5V, RL= 1.0kΩ) MMUN2213RLT1 Output Voltage(off)(VCC=5.0V,VB=0.5V, RL=1.0kΩ) (VCC=5.0V,VB=0.050V, RL=1.0kΩ) MMUN2230RLT1 (VCC=5.0V,VB=0.25V, RL=1.0kΩ) MMUN2215RLT1 MMUN2216RLT1 MMUN2233RLT1 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% VCE(sat) Vdc VOL VOH V dc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - 4.9 Vdc Q2–2/8 MMUN2211RLT1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol ( 3) Min 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 — 0.8 0.055 0.38 Typ 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 — 1.0 0.1 0.47 Max 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 — 1.2 0.185 0.56 Unit kΩ ON CHARACTERISTICS Input Resistor MMUN2211RLT1 R1 MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 Resistor Ratio MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 R1/R2 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. Q2–3/8 MMUN2211RLT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211RLT1 P D , POWER DISSIPATION (MILLIWATTS) 250 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 I C /I B = 10 T A = – 25°C 0.1 200 150 25°C 75°C 100 0.01 50 R θJA = 6 25°C/W 0 –50 0 50 10 150 0.001 0 20 40 60 80 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve h FE , DC CURRENT GAIN (NORMALIZED) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C 1000 4 V CE = 10 V f = 1 MHz T A = 75°C 25°C –25°C 100 C ob , CAPACITANCE (pF) 3 l E= 0 V T A = 2 5°C 2 1 10 1 10 100 0 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain V R , REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance 100 25°C 10 I C , COLLECTOR CURRENT (mA) 10 T A = – 25°C V in , INPUT VOLTAGE (VOLTS) 75°C V O = 0 .2 V T A = – 25°C 25°C 75°C 1 1 0.1 0.01 0.001 0 1 2 3 4 5 6 7 V O= 5 V 8 9 10 0.1 0 10 20 30 40 50 V in , INPUT VOLTAGE (VOLTS) Figure 5. V C E(sat) v ersus I C I C , COLLECTOR CURRENT (mA) Figure 6. V C E(sta) v ersus I C Q2–4/8 MMUN2211RLT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212RLT1 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 1000 I C /I B = 10 V CE = 10 V T A = 75°C 25°C –25°C T A = – 25°C 25°C 0.1 75°C 100 0.01 0.001 0 20 40 60 80 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 4 100 Figure 8. DC Current Gain 75°C 25°C T A = – 25°C I C , COLLECTOR CURRENT (mA) C ob , CAPACITANCE (pF) f = 1 MHz l E= 0 V 3 10 T A = 2 5°C 1 2 0.1 1 0.01 0.001 0 1 2 3 4 5 6 7 8 V O= 5 V 9 10 0 0 10 20 30 40 50 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) V O = 0 .2 V T A = – 25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current Q2–5/8 MMUN2211RLT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213RLT1 10 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) I C /I B = 10 T A = – 25°C 1000 V CE = 10 V 25°C 1 75°C T A = 75°C 25°C –25°C 100 0.1 0.01 0 20 40 60 80 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C 1 100 Figure 13. DC Current Gain C ob , CAPACITANCE (pF) 0.8 I C , COLLECTOR CURRENT (mA) f = 1 MHz l E= 0 V T A = 2 5°C 75°C 10 25°C T A = – 25°C 0.6 1 0.4 0.1 0.2 0.01 0.001 V O= 5 V 0 1 2 3 4 5 6 7 8 9 10 0 0 10 20 30 40 50 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) V O= 2 V T A=–25°C 25°C 10 75°C 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current Q2–6/8 MMUN2211RLT1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214RLT1 1 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 300 I C /I B = 10 T A = – 25°C 25°C V 250 CE = 10V T A = 75°C 25°C 0.1 200 –25°C 150 75°C 0.01 100 50 0.001 0 20 40 60 80 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C 4 100 Figure 18. DC Current Gain I C , COLLECTOR CURRENT (mA) 3.5 C ob , CAPACITANCE (pF) f = 1 MHz l E= 0 V T A= 25°C 75°C 25°C 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 T A = – 25°C 10 V O= 5 V 1 0 1 2 3 4 5 6 7 8 9 10 35 40 45 50 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) T A = – 25°C V O = 0 .2 V 25°C 75°C 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current Q2–7/8 MMUN2211RLT1 SERIES TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHERLOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V V CC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source Q2–8/8