MSA1022

PNP RF Amplifier Transistor Surface Mount COLLECTOR 3 MSA1022–CT1 3 1 2 CASE 318D–03, STYLE1 SC–59 2 BASE 1 EMITTER MAXIMUM RATINGS (T A = 25 °C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V CBO V CEO V EBO IC Symbol PD TJ T stg Value –30 –20 –5.0 –30 Max 200 150 -55 ~ +150 Symbo I CBO I CEO I EBO h FE f T Unit Vdc Vdc Vdc mAdc Unit mW °C °C lMin — — — 110 150 Max –0.1 –100 –10 220 — Unit µAdc µAdc µAdc — MHz THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25 °C) Characteristic Collector Cutoff Current (V CB = –10 Vdc, I E = 0) Collector-Emitter Breakdown Voltage (V CE = –20 Vdc, I B = 0) Emitter-Base Breakdown Voltage (V EB = –5.0 Vdc, I C = 0) DC Current Gain (1) (V CE = –10 Vdc, I C = –1.0 mAdc) Current-Gain - Bandwidth Product (V CB = –10 Vdc, I E = 1.0 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. DEVICE MARKING Marking Symbol ECX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N1–1/1