MSD601-RT1

NPN General Purpose Amplifier Transistors Surface Mount COLLECTOR 3 MSD601–RT1 MSD601–ST1 3 1 2 BASE 1 EMITTER CASE 2 MAXIMUM RATINGS (T A = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous Collector Current–Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC I C(P) Symbol PD TJ T stg Value 60 50 7.0 100 200 Max 200 150 –55 ~ +150 Unit Vdc Vdc Vdc mAdc mAdc Unit mW °C °C Symbol V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 — — 210 290 90 — 318D–03, STYLE1 SC–59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector-Base Cutoff Current (V CB = 45 Vdc, I E = 0) Collector-Emitter Cutoff Current (V CE = 10 Vdc, I B = 0) DC Current Gain (1) (V CE = 10 Vdc, I C = 2.0 mAdc) MSD601-RT1 MSD601-ST1 (V CE = 2.0 Vdc, I C = 100 mAdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. Max — — — 0.1 100 340 460 — 0.5 Unit Vdc Vdc Vdc µAdc nAdc — Vdc DEVICE MARKING Marking Symbol YRX MSD601–RT1 YSX MSD601–ST1 The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N6–1/1