FLK017WF

FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 1.15 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with gate resistance of 3000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Noise Figure Associated Gain Thermal Resistance CASE STYLE: WF Symbol IDSS gm Vp VGSO P1dB G1dB ηadd NF Gas Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 40mA VDS = 5V, IDS = 3mA IGS = -3µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 14.5 GHz VDS = 3V, IDS = 20mA (Typ.), f = 12 GHz Channel to Case Min. -1.0 -5 19.5 6.0 Limit Typ. Max. 60 30 -2.0 20.5 7.5 26 2.5 7 65 90 -3.5 130 Unit mA mS V V dBm dB % dB dB °C/W G.C.P.: Gain Compression Point Edition 1.1 July 1999 1 FLK017WF X, Ku Band Power GaAs FET POWER DERATING CURVE 2 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Total Power Dissipation (W) Drain Current (mA) 60 VGS =0V -0.5V 1 40 -1.0V 20 -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER f = 14.5GHz IDS ≈ 0.6 IDSS VDS=10V VDS=8.5V Output Power (dBm) 22 20 18 16 14 ηadd Pout 40 20 5 7 9 11 13 15 Input Power (dBm) 2 ηadd (%) FLK017WF X, Ku Band Power GaAs FET +j50 +j25 12 11 10 13 14 15 16GHz 50Ω +j100 +j250 0.1 +j10 9 16GHz 8GHz 10 SCALE FOR |S12| S11 S22 +90° 0.2 S21 S12 0 15 14 25 100 250 180° SCALE FOR |S21| 4 3 2 1 8GHz 9 16GHz 8GHz 10 9 10 11 15 11 14 13 12 13 15 14 0° -j10 13 12 11 10 -j250 16GHz -j25 9 8GHz -j100 -90° -j50 S-PARAMETERS VDS = 10V, IDS = 40mA FREQUENCY (MHZ) 500 1000 8000 9000 10000 11000 12000 13000 14000 15000 16000 S11 MAG .990 .978 .750 .737 .727 .708 .689 .679 .656 .606 .526 S21 ANG -15.9 -31.4 175.7 157.2 139.7 119.9 98.4 80.5 66.3 50.8 32.0 S12 ANG 166.0 152.3 14.1 -3.8 -20.1 -37.4 -57.1 -76.9 -95.4 -112.1 S22 ANG 77.2 65.7 -35.2 -39.2 -44.7 -53.8 -66.4 -82.5 -96.0 MAG 2.892 2.836 1.539 1.436 1.367 1.345 1.307 1.208 1.088 1.003 .976 MAG .006 .011 .038 .041 .047 .055 .064 .069 .071 .076 .088 MAG .852 .850 .818 .816 .812 .812 .817 .823 .840 .852 .848 ANG -7.9 -16.3 -93.7 -106.0 -116.2 -126.5 -140.3 -157.4 -173.1 177.7 170.7 -109.7 -126.8 -129.4 Download S-Parameters, click here 3 FLK017WF X, Ku Band Power GaAs FET Case Style "WF" Metal-Ceramic Hermetic Package Ø1.6±0.01 (0.063) 2.5 (0.098) 1 2 3 2.5±0.15 (0.098) 1.0 Min. (0.039) 0.1±0.05 (0.004) 1.0 Min. (0.039) 2.5 Max. (0.098) 0.6 (0.024) 8.5±0.2 (0.335) 6.1±0.1 (0.240) 0.8±0.1 (0.031) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4