FLK107XV

FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25°C 7.50 -65 to +175 175 Unit V V W °C °C Gate Gate Gate Gate Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with gate resistance of 500Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Power-added Efficiency Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Channel to Case VDS = 10V IDS ≈ 0.6IDSS f = 14.5GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 250mA VDS = 5V, IDS = 20mA IGS = -20µA Min. -1.0 -5 29 5.5 Limit Typ. Max. 400 200 -2.0 30 6.5 31 15 600 -3.5 20 Unit mA mS V V dBm dB % °C/W Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.3 July 1999 1 FLK107XV GaAs FET & HEMT Chips POWER DERATING CURVE 10 Total Power Dissipation (W) 8 6 4 2 400 300 200 100 -2.0V 0 50 100 150 200 2 4 6 8 10 Drain-Source Voltage (V) VGS =0V -0.5V -1.0V -1.5V DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Case Temperature (°C) OUTPUT POWER vs. INPUT POWER Drain Current (mA) P1dB & ηadd vs. VDS f = 14.5GHz IDS≈0.6IDSS Output Power (dBm) P1dB (dBm) VDS=10V 30 IDS≈0.6IDSS f = 14.5GHz 28 26 31 Pout 30 29 P1dB ηadd (%) ηadd 24 22 ηadd 40 20 28 27 30 20 14 16 18 20 22 24 26 8 9 10 Input Power (dBm) Drain-Source Voltage (V) 2 ηadd (%) 40 FLK107XV GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, IDS = 240mA S21 S12 MAG ANG MAG ANG 11.209 9.441 6.826 5.082 3.976 3.236 2.713 2.325 2.026 1.789 1.596 1.436 1.301 1.186 1.086 1.000 .923 .856 .795 .741 .692 .648 .608 .572 .538 .508 .479 .453 .429 .407 .386 .367 .349 .333 .317 .302 .289 .276 .264 .252 .241 171.6 142.2 118.3 103.5 93.0 84.7 77.6 71.3 65.6 60.2 55.1 50.2 45.5 41.0 36.6 32.3 28.2 24.2 20.3 16.5 12.7 9.1 5.6 2.1 -1.2 -4.5 -7.8 -10.9 -14.0 -17.0 -19.9 -22.8 -25.6 -28.4 -31.1 -33.7 -36.3 -38.8 -41.3 -43.8 -46.2 .007 .031 .045 .050 .052 .053 .053 .053 .053 .053 .052 .052 .051 .051 .050 .050 .049 .048 .048 .047 .046 .046 .045 .044 .044 .043 .042 .042 .041 .040 .040 .039 .039 .038 .038 .037 .037 .036 .036 .035 .035 82.1 54.8 33.6 21.4 13.5 7.8 3.3 -0.4 -3.6 -6.4 -8.9 -11.3 -13.5 -15.5 -17.4 -19.2 -20.9 -22.5 -24.0 -25.5 -26.8 -28.2 -29.4 -30.6 -31.8 -32.9 -33.9 -34.9 -35.9 -36.8 -37.7 -38.6 -39.4 -40.2 -41.0 -41.7 -42.5 -43.2 -43.8 -44.5 -45.1 FREQUENCY (MHZ) 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 18500 19000 19500 20000 S11 MAG .998 .972 .941 .926 .919 .915 .913 .913 .912 .913 .913 .914 .915 .916 .917 .918 .919 .920 .921 .923 .924 .925 .926 .927 .928 .929 .930 .932 .933 .934 .935 .936 .937 .937 .938 .939 .940 .941 .942 .943 .944 S22 MAG .214 .227 .246 .263 .282 .302 .324 .346 .370 .394 .418 .441 .465 .487 .509 .530 .551 .570 .589 .607 .624 .640 .655 .669 .683 .696 .708 .720 .731 .741 .751 .760 .769 .777 .785 .793 .800 .806 .813 .819 .824 ANG -14.5 -65.3 -105.2 -127.5 -141.3 -150.7 -157.5 -162.9 -167.3 -171.0 -174.2 -177.1 -179.7 177.9 175.6 173.5 171.5 169.6 167.7 165.9 164.2 162.5 160.9 159.3 157.7 156.2 154.7 153.2 151.7 150.3 148.9 147.5 146.1 144.8 143.5 142.1 140.8 139.6 138.3 137.1 135.8 Gate Drain ANG -15.0 -64.9 -98.3 -113.5 -121.0 -125.1 -127.7 -129.6 -131.1 -132.6 -134.0 -135.4 -136.8 -138.3 -139.8 -141.2 -142.7 -144.2 -145.7 -147.2 -148.7 -150.1 -151.6 -153.0 -154.4 -155.8 -157.1 -158.5 -159.8 -161.1 -162.3 -163.6 -164.8 -166.0 -167.1 -168.3 -169.4 -170.5 -171.6 -172.7 -173.8 NOTE:* The data includes bonding wires. n: number of wires n=4 (0.2mm length, 25µm Dia Au wire) n=4 (0.2mm length, 25µm Dia Au wire) Download S-Parameters, click here 3 FLK107XV GaAs FET & HEMT Chips CHIP OUTLINE 110 55 (Unit: µm) Drain Drain Drain Drain 70 58 Gate Gate Gate Gate 60 56 Source electrodes are connected to the PHS by Via-Hole Die Thickness: 60±20µm 860 (Via-Hole) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 480