FLL300IL-1

FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 100 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Symbol IDSS gm Vp Test Conditions* VDS = 5V, VGS = 0V VDS = 5V, IDS = 7200mA VDS = 5V, IDS = 720mA f=900MHz f=1.8GHz f=2.6GHz f=900MHz f=1.8GHz f=2.6GHz 11.0 10.0 8.0 13.0 12.0 10.0 6.0 44 1.1 8.0 1.5 80 dB dB dB A % °C/W °C 43.0 44.5 dBm Min. -1.0 -5 Limit Typ. Max. 12 16 6000 -2.0 -3.5 Unit A mS V V Gate Source Breakdown Voltage VGSO IGS = -720µA FLL300IL-1 Output Power FLL300IL-2 P1dB at 1dB G.C.P. VDS = 10V FLL300IL-3 IDS = 0.5 IDSS FLL300IL-1 (Typ.) Power Gain FLL300IL-2 G1dB at 1dB G.C.P. FLL300IL-3 Drain Current Power added Efficiency Thermal Resistance Channel Temperature Rise CASE STYLE: IL * Under fixed VGS bias condition Idsr ηadd Rth ∆Tch VDS = 10V IDS = 0.5 IDSS (Typ.) Channel to Case (10V x Idsr - Pout + Pin) x Rth G.C.P.: Gain Compression Point Edition 1.2 July 1999 1 FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET POWER DERATING CURVE Total Power Dissipation (W) 120 100 80 60 40 20 0 50 100 150 200 Case Temperature (°C) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain Current (A) 12 9 6 3 0 2 4 6 VGS =0V -0.5V -1.0V -1.5V -2.0V 8 10 Drain-Source Voltage (V) 2 FLL300IL-1 L-Band Medium & High Power GaAs FET +j50 +j100 +j25 1.5GHz 0.5GHz S11 S22 +90° S21 S12 +j250 +j10 1.0 1.0 1.5GHz 1.0 1.3 10 25 50Ω 100 250 1.5GHz 0 0.5GHz 180° 2 1 1.0 0.5GHz 1.5GHz SCALE FOR |S21| 0° -j10 -j250 .01 -j25 -j50 .02 -j100 -90° FREQUENCY (MHZ) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 S11 MAG .961 .957 .956 .955 .948 .943 .933 .923 .910 .898 .875 ANG 176.7 174.7 172.5 170.6 168.2 166.0 161.9 158.8 155.1 151.0 145.8 S-PARAMETERS VDS = 10V, IDS = 6000mA S21 S12 MAG ANG MAG ANG 1.318 1.162 1.053 .989 .951 .944 .952 .975 1.021 1.094 1.182 70.0 64.9 59.9 55.1 49.6 44.5 37.9 31.7 24.7 16.8 8.4 .005 .005 .006 .007 .008 .009 .010 .012 .015 .017 .023 26.1 26.6 33.0 32.2 28.6 25.7 32.6 25.2 23.1 19.7 15.1 SCALE FOR |S12| S22 MAG .889 .884 .880 .871 .865 .855 .841 .828 .810 .789 .760 ANG 174.0 173.0 171.7 170.5 169.5 167.7 167.0 165.1 163.3 161.1 158.9 Download S-Parameters, click here OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.5 IDSS f = 0.9 GHz Output Power (dBm) 46 44 42 40 38 36 Pout 60 ηadd (%) 45 ηadd 30 15 23 25 27 29 31 33 Input Power (dBm) 0 3 FLL300IL-2 L-Band Medium & High Power GaAs FET +j50 +j100 +j25 2.2 2.0 +j101.4 1.2 0 1.6 1.8 2.2 1.6 1.2 2.0 10 25 S11 S22 +90°C S21 S12 2.6 2.4 +j250 2.6 2.8 50Ω 100 250 2.4 2.2 2.6 ±180° SCALE FOR |S | 21 2.0 5 4 3 2 2.4 1 2.4 1.8 2.6 2.8 1.2 1.2 3.0 2.2 1.8 SCALE FOR |S12| 3.0 1.4 1.6 1.6 2.8 1.8 0.1 2.8 0° -j10 3.0 -j250 2.0 3.0 -j25 -j50 -j100 0.2 FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 S11 MAG .953 .944 .933 .923 .903 .864 .788 .654 .506 .522 .652 .716 .746 .771 .763 .722 .626 .508 .544 .686 .791 ANG 167.2 164.6 161.0 157.3 153.3 148.3 142.2 137.8 144.5 161.1 162.2 154.3 150.0 139.4 125.1 106.2 75.9 23.4 -45.8 -94.8 -123.6 S-PARAMETERS VDS = 10V, IDS = 6000mA S21 S12 MAG ANG MAG ANG .788 .811 .882 .997 1.169 1.419 1.752 2.179 2.526 2.523 2.249 1.946 1.984 1.902 1.887 1.935 1.998 1.932 1.613 1.136 .726 34.0 28.0 21.5 14.0 5.3 -6.9 -23.0 -45.3 -74.2 -104.9 -131.4 -149.5 -167.8 171.9 152.6 133.4 106.5 73.3 36.7 3.4 -22.0 .003 .005 .006 .007 .008 .010 .014 .018 .023 .024 .022 .021 .023 .022 .023 .025 .027 .026 .021 .016 .010 -90°C S22 MAG .869 .864 .859 .857 .850 .853 .868 .889 .923 .907 .852 .789 .730 .644 .555 .460 .323 .161 .031 .210 .370 ANG 169.9 169.0 167.9 166.2 165.2 164.7 162.7 160.0 155.3 148.1 141.8 136.7 130.5 124.2 117.9 113.5 103.1 89.3 -62.8 -105.9 -118.5 -32.3 -31.6 -50.9 -50.6 -60.5 -71.2 -86.6 -109.7 -136.9 -167.7 165.4 148.1 129.7 110.3 91.3 71.1 41.9 9.1 -25.1 -63.2 -90.8 OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.5 IDSS f = 1.8 GHz Pout Download S-Parameters, click here Output Power (dBm) 46 44 42 40 38 36 60 ηadd (%) 45 ηadd 30 15 24 26 28 30 32 34 Input Power (dBm) 0 4 FLL300IL-3 L-Band Medium & High Power GaAs FET +j50 +j25 1.5GHz 2.5 2.0 1.5GHz 2.5 3.0 2.5 3 S11 S22 +j100 +90° S21 S12 .04 2.5 .03 +j250 SCALE FOR |S12| +j10 .02 .01 3.0 0 10 3.5 25 50Ω 100 3.0 250 180° 4 2 1 3.5 1.5 3.0 SCALE FOR |S21| 3.5 2.0 0° 1.5 -j10 3.5 -j250 2.0 -j25 -j50 -j100 S-PARAMETERS VDS = 10V, IDS = 6000mA S21 ANG 130.6 123.3 114.2 102.9 88.8 71.7 54.5 173.9 175.2 157.4 137.6 119.7 99.3 72.8 37.9 -4.7 -44.2 -80.2 -109.5 -131.0 -147.1 -90° FREQUENCY (MHZ) 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 S11 MAG .902 .872 .829 .756 .645 .463 .217 .065 .285 .441 .523 .560 .583 .578 .564 .564 .605 .731 .813 .864 .895 S12 ANG -3.1 -13.4 -25.8 -40.5 -57.7 -78.8 -103.5 -129.4 -153.9 -176.2 166.5 146.9 126.7 104.2 79.1 51.3 20.3 -9.0 -32.7 -52.7 -69.8 S22 ANG -55.7 -69.8 -81.5 -96.1 -113.4 -134.7 -160.3 173.7 150.2 128.8 110.8 91.6 72.2 49.8 28.0 0.5 -33.2 -63.6 -88.0 -106.9 -121.2 MAG 1.169 1.324 1.539 1.824 2.199 2.604 2.939 3.080 3.055 2.938 2.843 2.768 2.791 2.840 2.854 2.789 2.536 1.981 1.502 1.130 .853 MAG .009 .010 .012 .016 .019 .024 .028 .031 .032 .032 .032 .033 .035 .036 .039 .039 .039 .031 .023 .019 .013 MAG .854 .852 .847 .847 .854 .860 .867 .848 .808 .752 .700 .628 .550 .461 .348 .208 .081 .132 .253 .345 .408 ANG 155.0 153.2 150.7 148.5 146.1 142.2 137.4 131.6 125.3 119.7 119.6 113.6 109.0 102.5 94.4 91.8 125.9 -167.4 -158.6 -162.2 -168.1 OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.5 IDSS f = 2.6 GHz Pout Download S-Parameters, click here Output Power (dBm) 46 44 42 40 38 36 60 ηadd (%) 45 30 ηadd 15 0 26 28 30 32 34 36 Input Power (dBm) 5 FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET Case Style "IL" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 1 0.1 (0.004) 4 2 3 1.0 (0.039) 2.0 Min. (0.079) 4-R 1.3±0.15 (0.051) 2.4±0.15 (0.094) 5.5 Max. (0.217) 16.4 (0.646) 1.9 (0.075) 17.4±0.25 (0.685) 8.0±0.15 (0.315) 20.4±0.2 (0.803) 24±0.2 (0.945) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 6