FLM3439-18F

FLM3439-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM3439-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 83.3 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 26.0 and -11.6 mA respectively with gate resistance of 25Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IK Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 3.9 GHz, ∆f = 10 MHz 2-Tone Test Pout = 32.0dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 3.4 ~ 3.9 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 4.8A VDS = 5V, IDS = 375mA IGS = -480µA Min. -0.5 -5.0 42.0 9.5 -44 Limit Typ. Max. 7.5 13.5 8000 -2.0 43.0 10.5 -3.0 Unit A mS V V dBm dB mA % dB dBc °C/W °C 4800 6000 37 -46 1.6 ±0.6 1.8 80 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.1 August 2004 1 FLM3439-18F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 3.9 GHz f2 = 3.91 GHz 2-tone test Pout Total Power Dissipation (W) Output Power (S.C.L.) (dBm) 100 80 60 38 36 34 32 -10 -20 -30 -40 -50 40 20 IM3 30 28 0 50 100 150 200 20 22 24 26 28 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V P1dB 44 OUTPUT POWER vs. INPUT POWER 44 VDS = 10V f = 3.65 GHz Output Power (dBm) Output Power (dBm) Pin=32dBm 43 42 Pout 42 30dBm 41 45 ηadd 40 28dBm 39 38 30 38 26dBm 15 37 3.4 3.65 3.9 27 28 29 30 31 32 33 Frequency (GHz) Input Power (dBm) 2 ηadd (%) 40 IM3 (dBc) FLM3439-18F C-Band Internally Matched FET +j50 +j25 +j100 8 6 4.0 4.1 +j250 4.0 +j10 3.8 3.7 3.9 3.8 3.9 4.0 3.7 4.1 50Ω 3.6 3.5 3.4 3.4 3.2GHz 3.3 3.2GHz 3.3 4.1 4 SCALE FOR |S21| S11 S22 +90° S21 S12 3.2GHz 4.1 SCALE FOR |S12| 100 250 0 10 3.6 3.5 180° 0.2 3.9 0.1 3.8 3.8 3.7 3.9 4.0 2 3.3 3.2GHz 3.4 3.5 3.6 0° 3.6 3.3 3.5 3.4 3.7 -j10 -j250 -j25 -j50 -j100 -90° S-PARAMETERS VDS = 10V, IDS = 4800mA FREQUENCY (MHZ) 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 S11 MAG .430 .366 .338 .338 .342 .336 .315 .271 .206 .138 S21 ANG MAG 4.061 4.105 4.091 3.998 3.934 3.871 3.852 3.851 3.855 3.881 S12 ANG MAG .043 .047 .051 .054 .057 .060 .063 .066 .069 .073 S22 ANG MAG .370 .383 .417 .444 .462 .470 .469 .461 .448 .433 ANG -61.8 -95.7 -127.2 -150.6 -170.1 171.9 154.0 134.1 112.7 90.9 -46.3 -80.1 -119.3 -151.4 -178.3 158.2 136.0 111.9 84.1 44.6 55.9 20.1 -20.3 -57.0 -92.1 -126.4 -160.0 164.3 129.5 97.2 -3.8 -40.5 -81.4 -118.1 -152.7 173.6 140.4 105.4 70.9 39.5 3 FLM3439-18F C-Band Internally Matched FET Case Style "IK" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 1 0.1 (0.004) 2 0.6 (0.024) 14.9 (0.587) 2.0 Min. (0.079) 4-R 1.3±0.15 (0.051) 3 2.4±0.15 (0.094) 5.5 Max. (0.217) 1.4 (0.055) 17.4±0.3 (0.685) 8.0±0.2 (0.315) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) 20.4±0.3 (0.803) 24±0.5 (0.945) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4